Study on Defects in GaAs by means of Positron Annihilation

正电子湮灭研究砷化镓缺陷

• 批准号: 04650030
• 负责人: ITOH Yoshiko
• 金额: $ 1.34万
• 依托单位: The Institute of Physical and Chemical Research (RIKEN)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04650030/
• 关键词: positron annihilation; Doppler measurement; life time measurement; ortho-positronium; para-positronium; オルソポジトロニウム; パラポジトロニウム; 陽電子消滅寿命; ドップラー拡がり; ポーラスシリコン; 低速陽電子ビーム; 陽電子消滅ドプラー広がり; GaAs結晶欠陥

1. Study of LEC-GaAs(1) Measurement of positron lifetime and Doppler-broadened annihilation have been performed on electron irradiated LEC-GaAs. Recovery and clustering of electron induced defects were published in Applied Physics A 58,59(1994)(2) Temperature dependence of proton irradiation induced defects were studied using positron annihilation technique. Below 300K the charge state Si doping induced defects were investigated and Gallium vacancies and antisite GaAs were produced after proton irradiation (submitted in Applied Phys A).2. Production of slow positron beam using A VF Cyclotron.(1) Construction of System for production of slow positron beam. System has been modified for high quality slow positron beam and low background.(2) Several targets such as boron nitride (BN), Carbon, Si_3N_4 and, NaF were used for beta_+ decay reaction. For BN slow positron intensity of 1.4 X 10^4/sec was obtained.

1.LEC-GaAs的研究(1)对电子辐照的LEC-GaAs进行了正电子寿命测量和多普勒展宽湮没实验。电子诱导缺陷的恢复和聚集发表在《应用物理》A 58，59(1994)(2)上。(2)用正电子湮没技术研究了质子辐照诱导缺陷的温度依赖性。在300K以下，研究了电荷态Si掺杂引起的缺陷，并在质子辐照后产生了Ga空位和反位GaAs(提交于《应用物理A》)。用VF回旋加速器产生慢正电子束。(1)慢正电子束产生系统的建立。对系统进行了改进，以获得高质量的慢正电子束和低本底。(2)用氮化硼(BN)、碳、Si_3N_4和NaF等靶进行了β_+衰变反应。对于BN，获得了1.4×10~(-4)/秒的慢正电子强度。

项目成果

Y.Itoh et al.: "Defect Study on Electron Irradiated GaAs by means of Positron Annihilation" Appl.Phys.A. 58. 59-62 (1994)

Y.Itoh 等人：“通过正电子湮灭对电子辐照 GaAs 的缺陷研究”Appl.Phys.A。

Y.Itoh et al.: "Characterization of Porous Silicon by Positron Annihilation" J.de Physique IV-Colloquia C4,J.de Physique II. 3. 193-195 (1993)

Y.Itoh 等人：“通过正电子湮灭对多孔硅进行表征”J.de Physique IV-Colloquia C4、J.de Physique II。

Y.Itoh, H.Murakami, and A.Kinoshita: ""Positron Annihilation Study on Nanometer Cavities in Porous Silicon"" Hyperfine Interaction. (in press).

Y.Itoh、H.Murakami 和 A.Kinoshita：“多孔硅纳米腔的正电子湮没研究”超精细相互作用。

Y.Itoh et al.: "Defects on Electron or Proton Irradiated Undoped and Si-doped GaAs by Positron Annihilation" Materials Science Forum. 105-110. 1085-1088 (1992)

Y.Itoh 等人：“正电子湮灭对电子或质子辐照未掺杂和硅掺杂 GaAs 的缺陷”材料科学论坛。

Y.Itoh et al.: "Positron Annihilation in Porous Silicon" Appl.Phys.Lett.63. 2798-2799 (1993)

Y.Itoh 等人：“多孔硅中的正电子湮灭”Appl.Phys.Lett.63。