Fundamental research on growth kinetickd of silicides due to solid reaction between metal and silicon

利用大块金属和单晶硅片扩散偶研究了Ni-Si、Pt-Si、Ti-Si和Mo-Si二元体系硅化物的生长动力学。由于硅化物在现代硅半导体器件技术中发挥着积极的作用，人们积累了大量关于硅化物在薄膜金属/体硅扩散偶中形成的知识，人们认识到，在细晶薄膜中，硅化物的动力学过程通常以晶界扩散为主，因此在较低温度下，硅化物的相互扩散比体扩散偶更快。然而，我们没有发现大块样品和薄膜样品的相互扩散有明显的区别。本研究的显著发现是，与其他金属/金属反应扩散情况相比，金属中少量氧对硅化物在体扩散和薄膜扩散偶中的生长速率都有敏感的影响。

The growth kineticks of silicides of Ni-Si, Pt-Si, Ti-Si and Mo-Si binary systems has been studied by using bulk metals and mono-crystaline silicon wafer diffusion couples. Because the silicides play an active role in the modern silicon semiconductor device technology, a great deal of kowledge about the formation of silicides in thin film metal/bulk silicon diffusion couples has been accumulated and it has been recognized that the kinetic prosess is usually dominated by grain boundary diffusion in a fine grained thin film and consequently interdiffusion can occur faster than in bulk diffusions cuple at lower temperatures.However, we could not fined obvious difference between the interdiffusion in bulk samples and in thin film samples.The remarkable finding of this study was that growth rate of silicides both in bulk and thin film diffusion couples is sensitively influenced by a small ammount of oxygen in metals incomparison with the cases of other metal/metal reactive diffusion.