Growth Kinetics of Iron Silicides in the Fe/Si Bulk Reaction Diffusion Couple and Thermo-Electric Property of FeSi_2 Formed by This Method.

采用4N-Fe、2N-Fe三种铁片与间质自由钢（IF-steel）和<100>取向硅片组成的体扩散对，研究了Fe/Si二元体系中的反应扩散。在这些扩散偶中形成的扩散层的生长速度彼此有很大差异。if -钢/Si扩散偶层的形成速度比4N-Fe/Si扩散偶层的形成速度快10倍以上。通过对比这些铁片中杂质的影响，讨论了不同生长速率的原因。对这种生长行为的一种可能的解释是，虽然没有证据表明4N-Fe中的氧是减缓硅化铁生长速度的候选因素，但4N-Fe中的Ti通过清除效应消除了氧的影响，因此if-steel/Si偶体的生长速度比4N-Fe/Si偶体快。

Reaction diffusion in Fe/Si binary system has been studied by using bulk diffusion couples being consisted of 3 kinds of iron sheets, i.e., 4N-Fe, 2N-Fe and interstitial free steel(IF-steel) and a <100> oriented silicon wafer. The growth rate of diffusion layers formed in these diffusion couples considerably differ from each other. The rate of the layers formed in the IF-steel/Si couple is more than ten times faster than that in the 4N-Fe/Si diffusion couple.The reason for the different growth rate was discussed by correlating the effect of impurity contained in these Fe sheets. A possible explanation of this growth behavior has been proposed as follows that oxygen in 4N-Fe is considered as a candidate which slows down the growth rate of iron silicides, although the evidence is not found, and Ti in 4N-Fe remove the effect of oxygen by scavenging effect so that the growth in if-steel/Si couple can be faster than 4N-Fe/Si couples.