Growth Kinetics of Iron Silicides in the Fe/Si Bulk Reaction Diffusion Couple and Thermo-Electric Property of FeSi_2 Formed by This Method.

Fe/Si本体反应扩散偶中硅化铁的生长动力学及该方法形成的FeSi_2的热电性能。

• 批准号: 09650722
• 负责人: SHIMOZAKI Toshitada
• 金额: $ 1.79万
• 依托单位: KYUSHU INSTITUTE OF TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650722/
• 关键词: IRON DI-SILICIDE; THERMO-ERECTRIC MATERIAL; REACTION DIFUSION; IF-STEEL; HIGH PURITY IRON; EFFECT OF OXYGEN; SCAVENGING EFFECT; DIFFUSION BARRIER; 金属間化合物; 拡散生成; 拡散障害

Reaction diffusion in Fe/Si binary system has been studied by using bulk diffusion couples being consisted of 3 kinds of iron sheets, i.e., 4N-Fe, 2N-Fe and interstitial free steel(IF-steel) and a <100> oriented silicon wafer. The growth rate of diffusion layers formed in these diffusion couples considerably differ from each other. The rate of the layers formed in the IF-steel/Si couple is more than ten times faster than that in the 4N-Fe/Si diffusion couple.The reason for the different growth rate was discussed by correlating the effect of impurity contained in these Fe sheets. A possible explanation of this growth behavior has been proposed as follows that oxygen in 4N-Fe is considered as a candidate which slows down the growth rate of iron silicides, although the evidence is not found, and Ti in 4N-Fe remove the effect of oxygen by scavenging effect so that the growth in if-steel/Si couple can be faster than 4N-Fe/Si couples.

用由4N-Fe、2N-Fe和无间隙间隙钢(IF-钢)和a-lt；100&gt；取向硅片3种铁片组成的体扩散偶研究了Fe/Si二元系统中的反应扩散。在这些扩散偶中形成的扩散层的生长速度彼此有很大的不同。IF-钢/Si扩散偶的成层速度比4N-Fe/Si扩散偶的成层速度快10多倍，并通过对比这几种铁片中杂质的影响，讨论了不同生长速率的原因。对这种生长行为提出了如下可能的解释：4N-Fe中的氧被认为是减缓硅化铁生长速度的候选元素，尽管没有发现证据，但4N-Fe中的钛通过清除作用消除了氧的影响，从而使IF-钢/Si对的生长速度比4N-Fe/Si对的生长速度更快。

项目成果

Okino: "Self-interstitial in Silicon" Jpn.J.Appl.Phys.Vol.36 (part 1. No.11). 6591-6594 (1997)

Okino：“硅中的自间隙”Jpn.J.Appl.Phys.Vol.36（第 1 部分，第 11 期）。

大西正己: "2元系反応拡散のける異相界面移動に関する界面反応と局所平衡" 日本金属学会誌. 62・6. 505-509 (1998)

大西正美：“二元反应扩散过程中的异相界面转移的界面反应和局部平衡”日本金属学会杂志62・6（1998）。

T.Shimozaki: "Effect of Diffusion Barrier and Impurity in Ti on the Growth" Defect and Diffusion Forum. 143-147. 591-596 (1997)

T.Shimozaki：“扩散势垒和钛中杂质对生长的影响”缺陷和扩散论坛。

下崎敏唯: "光照射によるGaAlAs系発光ダイオード表面での酸素の浸透" 日本金属学会誌. 61・11. 1268-1269 (1997)

Toshiyuki Shimosaki：“光照射下GaAlAs发光二极管表面的氧渗透”日本金属学会杂志61・11 1268-1269（1997）。

T.Shimozaki: "Effect of Diffusion Barrier and Impurities in Titaninm on the Growth of TiAl3 Layer" Defect and Diffusion Forum.143-147. 591-596 (1997)

T.Shimozaki：“Titaninm 中的扩散势垒和杂质对 TiAl3 层生长的影响”缺陷和扩散论坛。143-147。