Thermoelectric properties of thiospinels In1-x@xIn2S4-yTey

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The proposed project aims an improvement of thermoelectric (TE) performance of the In1-x@xIn2S4 (@ = vacancy) thiospinels. These n-type semiconductors are promising materials, which can be used as a counterpart in TE generators based on the environmental friendly natural mineral tetrahedrite. The isovalent substitutions of S by Te in In1-x@xIn2S4 is expected to enhance the mobility of charge carriers and thus, to improve electrical transport properties of such materials. To study TE behavior of In0.84@0.16In2S4-yTey, In0.78@0.22In2S4-yTey and In0.67@0.33In2S4-yTey (y = 0.1, 0.2, 0.3) (i.e. sulfides with common formula In1-x@xIn2S4-yTey) their syntheses, thorough characterization, crystal structure refinement as well as measurements of electrical and thermal transport properties will be performed. As an alternative method for the measurements of phononic thermal conductivity the micro-Raman spectroscopy will be used.Joining approaches from solid state chemistry and physics we will analyze the relationships between the compositions, charge carrier concentrations and their mobilities in the mentioned thiospinels. The understanding of such relationships will contribute to the development of Sulphur-containing n-type thermoelectric materials.