Study of atomistic diffusion, nucleation and cluster formation process of atoms and molecules
Study of atomistic diffusion, nucleation and cluster formation process of atoms and molecules
批准号:
17340091
负责人:
SUTO Shozo
金额:
$10.45万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2005
资助国家:
日本
项目状态:
已结题
起止时间:
2005 至 2007
中文摘要
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英文摘要
Recently, it is possible to observe atomistic motion of single atoms or single molecules on solid surfaces due to the development of surface probe microscopy, in particular scanning tunneling microscopy (STM). First goal of this study is to understand a cluster formation process from atomistic diffusion of single atoms, just after deposition up to 8 hours. We observed the atomistic motion of Ag atoms on a Si(111)7x7 surface and the formation process of (Ag)n clusters in a 7x7 surface potentials. It is found that the diffusion is cooperative where the hopping rates depend on the nearest neighbor sites. We also measured the tunneling spectroscopy and found that the n=5 and 6 clusters have a specific electronic energy level: Second goal is to investigate the weakest interaction between substrate and the adsorbate atoms or molecules. We observed two -epitaxial structures of pentacene polycrystalline thin film crystals on a hydrogen-terminated Si(111) surface and commensurabilites. Furthermore, we observed the step-induced anisotropic growth of pentacene thin film crystals on a hydrogen-terminated Si(111) surface. In the early stage of this study, we proposed the process for ultra-clean and atomically controlled hydrogen-terminated Si(111)-(1x1) Surface and it is revealed by high resolution electron energy loss spectroscopy, atomic force microscopy and scanning tunneling microscopy. We also propose the deuterium terminated Si(111) surface and observed the surface phonons. Third goal is to investigate the strong interaction between substrate and the adsorbate atoms. Formation process and surface structure of platinum silicide thin layers was studied using STM.Now, we are able to manipulate the single atom or molecule and, then, we try to estimate the cluster size and the electronic structure. Our final goal is to understand the cluster formation process, surface reaction and to form an electronic devices in the atomic scale.
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H:Si(111)-(1×1)表面の初期酸化過程の研究
H:Si(111)-(1×1)表面初始氧化过程研究
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[山川博美, 佐藤妙, 伊藤哲, 中尾登志雄, 島田正浩, 加藤大樹, 加藤大樹, 加藤大樹, 加藤大樹, 加藤大樹, 加藤大樹]
通讯作者:
加藤大樹
Two Epitaxal Structures of Polycrystalline Thin Films Crystals on a Hydrogen Terminated(111) Surface and Their Commensurabilities
氢封端(111)表面多晶薄膜晶体的两种外延结构及其公度性
DOI:
--
发表时间:
2007
期刊:
Physical Review B 76
影响因子:
--
作者:
[S. Nishikata, G. Sazaki, J. T. Sadowski, A. Al-Mahboob, T. Nishihara, Suto, T. Sakurai and K. Nakajima]
通讯作者:
T. Sakurai and K. Nakajima
Luminescence Kinetics of Nanosize Poly(di-n-hexyl)silane Embedded in Nanoporous Silica
纳米多孔二氧化硅中纳米聚二正己基硅烷的发光动力学
DOI:
--
发表时间:
2007
期刊:
Molecular Crystals and Liquid Crystals 468
影响因子:
--
作者:
[A. Dementjev, V. Gulbinas, L. Valkunas, N. Ostapneko, S. Suto and A. Watanabe]
通讯作者:
S. Suto and A. Watanabe
Si(111)7×表面で原子数に依存して成長する(Ag)nのSTM解析
(Ag)n 根据 Si(111)7× 表面原子数生长的 STM 分析
DOI:
--
发表时间:
2007
期刊:
影响因子:
--
作者:
[T. Taoka, H. Kato, T. Yamada, A. Kasuya, S. Suto, T.Tonegawa, A. Agui, 須藤彰三]
通讯作者:
須藤彰三
Step-induced Anisotropic Growth of Pentacene Thin Film Crystals on Hydrogen-terminated Si(111) Surface
氢封端 Si(111) 表面阶梯诱导各向异性生长并五苯薄膜晶体
DOI:
--
发表时间:
2007
期刊:
影响因子:
--
作者:
[S. Nishikata, G. Sazaki, T. Takeuchi, N. Usami, S. Suto and K. Nakajima]
通讯作者:
S. Suto and K. Nakajima
共 78 条
ELECTRONIC STATES AT SURFACES : HREELS-STM STUDY
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批准号:08454072
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.8万
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财政年份:1996
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负责人:SUTO Shozo
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依托单位:
RELATION BETWEEN SURFACE ELECTRONIC STATES AND SURFACE PLASMON DISPERSION
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批准号:06640428
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.28万
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财政年份:1994
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负责人:SUTO Shozo
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依托单位: