Study of atomistic diffusion, nucleation and cluster formation process of atoms and molecules

原子和分子的原子扩散、成核和团簇形成过程研究

• 批准号: 17340091
• 负责人: SUTO Shozo
• 金额: $ 10.45万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2005
• 资助国家: 日本
• 起止时间: 2005 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17340091/
• 关键词: Nano-cluster formation; Atomistic diffusion process; Nucleation; STM; Thin film growth

Recently, it is possible to observe atomistic motion of single atoms or single molecules on solid surfaces due to the development of surface probe microscopy, in particular scanning tunneling microscopy (STM). First goal of this study is to understand a cluster formation process from atomistic diffusion of single atoms, just after deposition up to 8 hours. We observed the atomistic motion of Ag atoms on a Si(111)7x7 surface and the formation process of (Ag)n clusters in a 7x7 surface potentials. It is found that the diffusion is cooperative where the hopping rates depend on the nearest neighbor sites. We also measured the tunneling spectroscopy and found that the n=5 and 6 clusters have a specific electronic energy level: Second goal is to investigate the weakest interaction between substrate and the adsorbate atoms or molecules. We observed two -epitaxial structures of pentacene polycrystalline thin film crystals on a hydrogen-terminated Si(111) surface and commensurabilites. Furthermore, we observed the step-induced anisotropic growth of pentacene thin film crystals on a hydrogen-terminated Si(111) surface. In the early stage of this study, we proposed the process for ultra-clean and atomically controlled hydrogen-terminated Si(111)-(1x1) Surface and it is revealed by high resolution electron energy loss spectroscopy, atomic force microscopy and scanning tunneling microscopy. We also propose the deuterium terminated Si(111) surface and observed the surface phonons. Third goal is to investigate the strong interaction between substrate and the adsorbate atoms. Formation process and surface structure of platinum silicide thin layers was studied using STM.Now, we are able to manipulate the single atom or molecule and, then, we try to estimate the cluster size and the electronic structure. Our final goal is to understand the cluster formation process, surface reaction and to form an electronic devices in the atomic scale.

近年来，由于表面探针显微镜的发展，特别是扫描隧道显微镜(STM)的发展，单原子或单分子在固体表面的原子运动已经成为可能。这项研究的第一个目标是理解从单个原子的原子扩散到沉积后8小时的团簇形成过程。我们观察了Ag原子在Si(111)7×7表面的原子运动以及在7×7表面电势下(Ag)n团簇的形成过程。研究发现，当跳跃率依赖于最近邻位置时，扩散是合作的。我们还测量了隧道光谱，发现n=5和n=6团簇有一个特定的电子能级：第二个目标是研究衬底与被吸附原子或分子之间最弱的相互作用。我们在氢端的Si(111)表面观察到了并五苯多晶薄膜的两种外延结构和可公度性。此外，我们还观察到了在氢终止的Si(111)表面上阶跃诱导的并五苯薄膜晶体的各向异性生长。在这项研究的早期阶段，我们提出了超清洁和原子控制的氢端基Si(111)-(1x1)表面的制备工艺，并用高分辨电子能量损失谱、原子力显微镜和扫描隧道显微镜进行了揭示。我们还提出了在Si(111)面上端氢的方法，并观察到了表面声子。第三个目标是研究衬底和吸附原子之间的强相互作用。用扫描隧道显微镜研究了硅化铂薄膜的形成过程和表面结构，现在我们可以操纵单个原子或分子，然后尝试估计团簇的大小和电子结构。我们的最终目标是了解团簇的形成过程、表面反应，并在原子尺度上形成电子器件。

项目成果

H:Si(111)-(1×1)表面の初期酸化過程の研究

H:Si(111)-(1×1)表面初始氧化过程研究

• 发表时间: 2009
• 作者: 山川博美;佐藤妙;伊藤哲;中尾登志雄;島田正浩;加藤大樹;加藤大樹;加藤大樹;加藤大樹;加藤大樹;加藤大樹
• 通讯作者: 加藤大樹

Si(111)7×表面で原子数に依存して成長する(Ag)nのSTM解析

(Ag)n 根据 Si(111)7× 表面原子数生长的 STM 分析

• 发表时间: 2007
• 作者: T. Taoka;H. Kato;T. Yamada;A. Kasuya;S. Suto;T.Tonegawa;A. Agui;須藤彰三
• 通讯作者: 須藤彰三

Step-induced Anisotropic Growth of Pentacene Thin Film Crystals on Hydrogen-terminated Si(111) Surface

氢封端 Si(111) 表面阶梯诱导各向异性生长并五苯薄膜晶体

• 发表时间: 2007
• 作者: S. Nishikata;G. Sazaki;T. Takeuchi;N. Usami;S. Suto and K. Nakajima
• 通讯作者: S. Suto and K. Nakajima

水素終端Si(11i)1×1表面に成長したAgナノクラスターのプラズモン

氢封端 Si(11i) 1×1 表面上生长的银纳米团簇的等离子体激元

• 发表时间: 2005
• 作者: 加藤大樹;田岡琢己;山田太郎;粕谷厚生;須藤彰三
• 通讯作者: 須藤彰三

Two Epitaxal Structures of Polycrystalline Thin Films Crystals on a Hydrogen Terminated(111) Surface and Their Commensurabilities

氢封端(111)表面多晶薄膜晶体的两种外延结构及其公度性

• 发表时间: 2007
• 期刊: Physical Review B 76
• 作者: S. Nishikata;G. Sazaki;J. T. Sadowski;A. Al-Mahboob;T. Nishihara;Suto;T. Sakurai and K. Nakajima
• 通讯作者: T. Sakurai and K. Nakajima