权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Evaluation method of radiative quantumn efficiency in amorphous semiconductor

非晶半导体辐射量子效率的评价方法

基本信息

批准号：
06650013
负责人：
NONOMURA Shuichi
金额：
$ 1.28万
依托单位：
Gifu University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

项目摘要

A radiative quantumn efficiency (RQE) in a thin film solid have been studied by using a photothermal deflection spectroscopy (PDS) and a photoacoustic spectroscopy (PAS). A main purpose is to develope the evaluation method for radiative quantumn efficiency of hydrogenated amorphous silicon, fullerene thin films, amorphous garium nitride and amorphous silicon oxide.(a) A radiative quantumn efficiency was obtained by the photo degradiation of photoluminescense, the value was about 30% in hydrogenated amorphous silicon at liquid nitrogen temperature. At the surface, the RQE was low because of the localized state at surface. Also the localized state density of a surface and bulk was estimated by PDS.The values are 9.5x10^<12>cm^<-2> and 1.8x10^<16>cm^<-2>, respectively.(b) The deflecting medium for a measurement of fullerene films has been found. And the RQE value was estimated by the photoluminescence degradiation effect by oxgen intercalation in the fullerene. The value was 5-10% at room temperature.(c) The film quality of silicon oxide produced by TICS is applicable to a TFT.The absorption coefficient spectrum of amorphous garium nitride was measured. The very long persistent photocurrent at room temperature was found in amorphous materials.(d) RQEPAS method was developed by using a PAS method. In this method, the errors of PPES method from light reflection at metal electrodes of piro device and the noise signal from transmitted light through metal electrodes was improved.(e) Photothermal bending spectroscopy was developed for the purpose of a measurement at vaccume. The sensitivity at present stage is 10^<-3>-10^<-4>. The merit and demerit has been demonstrated.

本文用光热偏转光谱（PDS）和光声光谱（PAS）研究了薄膜固体的辐射量子效率（RQE）。主要目的是发展氢化非晶硅、富勒烯薄膜、非晶氮化镓和非晶氧化硅的辐射量子效率的评价方法。(a)在液氮温度下，氢化非晶硅的光致发光的光降解得到了辐射量子效率，其值约为30%。在表面处，由于表面处的局域态，RQE较低。用PDS法计算了表面和体的局域态密度，其值分别为9.5 × 10 ~（13）<12>cm ~ 2<-2>和1.8 × 10 ~（13）<16>cm ~ 2<-2>。(b)找到了测量富勒烯薄膜的偏转介质，并利用氧嵌入富勒烯的光致发光降解效应估算了RQE值。室温下该值为5-10%。(c)用TICS生产的氧化硅薄膜质量可用于TFT。测量了非晶氮化镓的吸收系数谱。在室温下，在非晶态材料中发现了很长的持续光电流。(d)RQEPAS方法是通过使用PAS方法开发的。该方法克服了PPES方法中光在皮罗器件金属电极上的反射和透射光通过金属电极产生的噪声信号所带来的误差。(e)光热弯曲光谱是为了在真空下进行测量而开发的。现阶段的灵敏度为10^<-3>-10 ^<-4>。优点和缺点已经得到证明。