Influence of Energy Beam Irradiation to Dielectric Thin Film Growth Process.

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Dielectric thin films were synthesized with irradiation an energy beam to the film growth surface by dual ion beam sputtering (IBS) method and electron cyclotron resonance (ECR) sputtering method. AIN and Diamond thin films were chosen as the dielectric thin films.AIN thin films were synthesized with irradiation nitrogen ion beam to the film growth surface using Al metal target with IBS method. On the other hand, the diamond thin films were synthesized from carbon target using ECR sputtering method.The physical characteristic and surface morphology of the synthesized films were evaluated with XPS,XRD,spectrophotometer and atomic force microscope (AFM).The results are as follows,(1) The optical characteristic of the synthesized AIN films depended mainly on the energy of irradiation nitrogen ion, and crystal orientation depended on the irradiation angle of the nitrogen ion beam.(2) The electric conductivity and the optical transparency of the synthesized diamond-like carbon (DLC) films depended mainly on oxygen contents in plasma gas. The DLC films synthesized on the glass substrate at the oxygen content above 20mol% were insulator in electrical conductivity and had above 80% in transparency at 600nm light. The refractive index of the DLC films was above 2.4, the value is corresond to natural diamond.The crystal size of synthesized DLC films at substrate temperature 400ﾟC and 600ﾟC is about 20nm and 220nm respectively.(3) From the observation results of the surface morphology with AFM,the growth process of the films can be explained in the nucleation and the growth process.