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Development of waveguide-type functional optical devices using semimagnetic semiconductor superlattices

利用半磁性半导体超晶格开发波导型功能光学器件

基本信息

批准号：
06805006
负责人：
KOYANAGI Tsuyoshi
金额：
$ 1.22万
依托单位：
Yamaguchi University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

项目摘要

In this study, epitaxial growth of semimagnetic semiconductor Cd_<1-x>Mn_xTe films was performed by the ionized-cluster beam (ICB) deposition technique and their electronic structure and optical, magneto-optical and electrical properties were investigated for a fundamental research of waveguide-type optical devices using Cd_<1-x>Mn_xTe superlattices. The following results were obtained.(1)From results of the x-ray photoelectron spectroscopy (XPS), it was found that the p-d hybridization of Cd_<1-x>Mn_xTe was independent of the Mn concentration x. The results of XPS and magneto-circular dichroism (MCD) suggest that a high-order pertubation calculation of the Zeeman splitting is important in the high x region.(2)For Cd_<1-x>Mn_xTe films with x=1 (MnTe), the photocurrent was observed at optical transition energies between 3d multiple states, which are substantially regarded as a local state. From the configuration interaction cluster model, this can be explained by the p-d charge transfer transition through the strong p-d hybridization, which generates holes in the valence band composed of 5p Te orbitals of Cd_<1-x>Mn_xTe.(3)We tried to dope Cd_<1-x>Mn_xTe films with In by the ICB technique. It was found that the electrical conductivity of Cd_<1-x>Mn_xTe films increases with increasing the ionization percentage of In clusters. As the doping amount of In increases, the electrical conductivity increases and then decreases due to degradation of the crystalline quality of films. However, the conductivities of films were of the order of 10^4OMEGAcm. These results required funther studies on the doping conditions of Cd_<1-x>Mn_xTe films.

本论文<1-x>采用离子束（ICB）技术外延生长了半磁半导体Cd_ Mn_xTe薄膜，并对其电子结构、光学、磁光和电学性质进行了研究，为Cd_ Mn_xTe超晶格波导型光学器件的研究奠定了基础<1-x>。获得了以下结果。（1）X射线光电子能谱（XPS）结果表明，Cd_ Mn_xTe的p-d杂化<1-x>与Mn浓度x无关。XPS和磁圆二色性（MCD）的结果表明，高阶微扰计算的塞曼分裂是重要的，在高x区域。（2）对于<1-x>x=1（MnTe）的Cd_ Mn_xTe薄膜，在3d多重态之间的光学跃迁能量处观察到光电流，这些多重态基本上被认为是局域态。从组态相互作用团簇模型出发，这可以用强p-d杂化引起的p-d电荷转移跃迁来解释，这种跃迁在Cd_ Mn_xTe的5 p Te轨道组成的价带中产生空穴<1-x>。(3)We尝试用离子束技术对Cd_<1-x>Mn_xTe薄膜进行In掺杂。结果表明，Cd_<1-x>Mn_xTe薄膜的电导率随In团簇电离率的增加而增加。随着In掺杂量的增加，电导率增加，然后由于膜的结晶质量的劣化而降低。然而，薄膜的电导率在10^4 Ω·cm的量级。这些结果需要进一步研究Cd_<1-x>Mn_xTe薄膜的掺杂条件。