Development of waveguide-type functional optical devices using semimagnetic semiconductor superlattices

利用半磁性半导体超晶格开发波导型功能光学器件

基本信息

  • 批准号:
    06805006
  • 负责人:
  • 金额:
    $ 1.22万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
  • 财政年份:
    1994
  • 资助国家:
    日本
  • 起止时间:
    1994 至 1995
  • 项目状态:
    已结题

项目摘要

In this study, epitaxial growth of semimagnetic semiconductor Cd_<1-x>Mn_xTe films was performed by the ionized-cluster beam (ICB) deposition technique and their electronic structure and optical, magneto-optical and electrical properties were investigated for a fundamental research of waveguide-type optical devices using Cd_<1-x>Mn_xTe superlattices. The following results were obtained.(1)From results of the x-ray photoelectron spectroscopy (XPS), it was found that the p-d hybridization of Cd_<1-x>Mn_xTe was independent of the Mn concentration x. The results of XPS and magneto-circular dichroism (MCD) suggest that a high-order pertubation calculation of the Zeeman splitting is important in the high x region.(2)For Cd_<1-x>Mn_xTe films with x=1 (MnTe), the photocurrent was observed at optical transition energies between 3d multiple states, which are substantially regarded as a local state. From the configuration interaction cluster model, this can be explained by the p-d charge transfer transition through the strong p-d hybridization, which generates holes in the valence band composed of 5p Te orbitals of Cd_<1-x>Mn_xTe.(3)We tried to dope Cd_<1-x>Mn_xTe films with In by the ICB technique. It was found that the electrical conductivity of Cd_<1-x>Mn_xTe films increases with increasing the ionization percentage of In clusters. As the doping amount of In increases, the electrical conductivity increases and then decreases due to degradation of the crystalline quality of films. However, the conductivities of films were of the order of 10^4OMEGAcm. These results required funther studies on the doping conditions of Cd_<1-x>Mn_xTe films.
在这项研究中,半磁性半导体CD_ <1-x> Mn_xte膜的外在生长是通过电离群集束(ICB)沉积技术及其电子结构以及光学光学和电气的电子结构进行的,用于使用CD__ <1- <1- <1-x的基础研究。从X射线光电子光谱(XPS)的结果中获得了以下结果。发现CD_ <1-X> Mn_xte的P-D杂交与MN浓度X无关。 XPS和磁圆圈二色性(MCD)的结果表明,Zeeman拆分的高阶渗透性计算在高X区域中很重要。(2)对于CD_ <1-X> Mn_XTE膜,具有X = 1(MNTE)的X <1-X> Mn_XTE膜,在3D多个状态之间,在光学过渡能量上观察到光电流在3D多个状态之间被观察到,这是一个实质性的。从配置相互作用群集模型中,可以通过强p-d杂交的P电荷传输转变来解释,该杂交在价频带中生成孔,由CD_ <1-x> mn_xte的5p Te轨道组成。(3)我们试图使用In In In Incb Techique In In In In In In In In In Inceique。发现CD_ <1-x> Mn_xte膜的电导率随着簇中的电离百分比的增加而增加。随着掺杂量的增加,由于膜的晶体质量降解,电导率增加,然后降低。但是,胶片的电导率为10^4omeGacm。这些结果需要对CD_ <1-X> Mn_xte膜的掺杂条件进行诉讼。

项目成果

期刊论文数量(32)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
阿武宏明,小柳剛,大本英雄,河村卓,K.G.D.ラクナ-ス,松原覚衛: "Cd_<1-x>Mn_xTe(0≦x≦1)薄膜の電子構造と磁気光学効果" 日本応用磁気学会誌. 19. 197-200 (1995)
Hiroaki Abu、Tsuyoshi Koyanagi、Hideo Omoto、Takashi Kawamura、K.G.D.、Kakue Matsubara:“Cd_<1-x>Mn_xTe(0≤x≤1)薄膜的电子结构和磁光效应”日本应用磁学学会杂志19. 197-200 (1995)
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T.Koyanagi,H,Ohmoto,K.Matsubara and H.Anno: "Formation of Semimagnetic Semiconductor Superlattices by Ionized-Cluster Beam Technique and their Quantum Size Effects" Surface Review and Letters;Proceesings of the 7th International Symposium on Small Particl
T.Koyanagi,H,Ohmoto,K.Matsubara 和 H.Anno:“通过电离簇束技术形成半磁半导体超晶格及其量子尺寸效应”表面评论和快报;第七届国际小颗粒研讨会论文集
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小柳 剛: "半導体スピン物性に期待するもの-短期研究会の総括-" 物性研だより. 35. 42-43 (1995)
Tsuyoshi Koyanagi:“对半导体自旋特性的期望 - 短期研究小组的总结”来自固体物理研究所的通讯,35. 42-43 (1995)。
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H.Anno,K.Matsubara,T.Kawamura and T.Koyanagi: "Mn^<2+>3d Electronic Structure and Magneto-Optical Spectra of Cd_<1-x>Mn_xTe Films" Extended Abstracts of Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors. 89-92 (1995)
H.Anno、K.Matsubara、T.Kawamura 和 T.Koyanagi:“Cd_<1-x>Mn_xTe 薄膜的 Mn^<2>3d 电子结构和磁光光谱”物理与应用研讨会的扩展摘要
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H.Anno, T.Koyanagi, H.Ohmoto, T.Kawamura, K.G.D.Laknath and K.Matsubara: ""Electronic Structure and Magneto-Optical Effect of Cd_<1-x>Mn_xTe (0<less than or equal>x<less than or equal>1) Films"" Journal of Magnetic Society of Japan. 19 (2) (Japanese). 197
H.Anno、T.Koyanagi、H.Ohmoto、T.Kawamura、K.G.D.Laknath 和 K.Matsubara:“Cd_<1-x>Mn_xTe(0<小于或等于>x<
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KOYANAGI Tsuyoshi其他文献

KOYANAGI Tsuyoshi的其他文献

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{{ truncateString('KOYANAGI Tsuyoshi', 18)}}的其他基金

Development of Spin Seebeck Devices
自旋塞贝克装置的开发
  • 批准号:
    24560376
  • 财政年份:
    2012
  • 资助金额:
    $ 1.22万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Development of Magnetoelectric and Thermoelectric Devices Using Functionally Separated Nano Structures in Clathrate Compounds
利用笼形化合物中功能分离的纳米结构开发磁电和热电器件
  • 批准号:
    21560332
  • 财政年份:
    2009
  • 资助金额:
    $ 1.22万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
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