MBE growth and in situ spectroscopy of group-III monochalcogenide-nitride 2D layered materials and their heterostructures

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This project aims to establish an integrated platform for controlled structure-property correlations of advanced 2D materials by combining for the very first time ultrahigh-purity synthesis using molecular beam epitaxy (MBE) with direct in situ confocal optical and opto-electronic low temperature spectroscopy. Exploiting a unique MBE/in-situ analytical cluster tool currently being set up in our laboratories, we will focus on the optically active group-III monochalcogenide-nitride(N) based family of 2D materials (Ga,In)(Se,Te,N) and their heterostructures. Specifically, we will use van der Waals (vdW) epitaxial MBE growth to tailor the crystal structure, morphology/orientation and electronic/optical properties of binary and ternary group-III/VI monochalcogenides, and subsequently explore their optical response in vacuum to access their intrinsic electronic properties (quasiparticle and excitonic band gaps, charge carrier dynamics, exciton formation, relaxation and recombination lifetimes, etc.). Furthermore, we aim at realizing functional in-plane and vertical heterostructures involving both group-III monochalcogenide and group-III-N atomically thin layers to create novel interfaces for the manipulation of luminescence properties, and the study of charge separation and transfer at these interfaces under the influence of applied electric fields.