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Basic research on intra-board broad-band optical interconnects for high-performance system integration

高性能系统集成板内宽带光互连基础研究

基本信息

批准号：
15206008
负责人：
URA Shogo
金额：
$ 20.8万
依托单位：
Kyoto Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2005
项目状态：
已结题

项目摘要

Intra-board chip-to-chip optical interconnects with wavelength-division multiplexing (WDM) was investigated as one of strong candidates for solving the so-cold pin-bottle-neck problem occurred in future high-performance system integration.An integration of focusing grating couplers (FGCs) and distributed Bragg reflectors (DBRs) for constructing optical add-drop multiplexers in an optical waveguide board was theoretically and experimentally investigated and demonstrated. An interference exposure system was also designed and constructed to integrate DBRs with precise control of the grating periods.Reduction of insertion loss was discussed and tried for high-bit-rate signal transmission of Gbps. New structure was proposed for both reduction of the insertion loss and enhancement of the wavelength multiplexing range. Novel fabrication process was developed to fabricate the structure. The loss was reduced by 10dB.WDM signal transmission using two wavelengths in the fabricated optical waveguide was tested. Clear eye patterns were successfully observed.A circuit model of the photodiode has been proposed for design of the optoelectronic systems. The model includes the effects of the photo sensitivity, the transimpedance amplifier, and the bandwidth circuit. The model was applied to a GaAs PIN photodiode with pre-amplifier, and allows that the simulation of the output characteristics at 3.2GHz.Silicon nitride film with considerably low carbon concentration has been deposited from a metalorganic source by a new radical beam deposition method. The refractive index of the deposited film was controlled in the range of 1.79 and 1.89. Large-area deposition applicable to a 12-inch wafer was successfully achieved.

基于波分复用（WDM）技术的板内芯片到芯片光互连是解决未来高性能系统集成中“冷针-瓶颈”问题的一个有力候选方案，提出了一种基于聚焦光栅耦合器（FGC）和分布式布拉格反射器（DBR）的集成光互连结构。对光波导板中的分出复用器进行了理论和实验研究。设计并搭建了干涉曝光系统，实现了DBR与光栅周期精确控制的集成，并对降低插入损耗进行了探讨和尝试，实现了Gbps的高比特率信号传输。提出了一种既能降低插入损耗又能提高波分复用范围的新型结构。开发了新的制造工艺来制造该结构。实验结果表明，该光波导的损耗降低了10 dB，并对双波长WDM信号传输进行了测试。提出了光电二极管的电路模型，为光电系统的设计提供了依据。该模型包括光敏度、跨导放大器和带宽电路的影响。将该模型应用于带前置放大器的GaAs PIN光电二极管，模拟了其3.2GHz的输出特性。采用自由基束沉积方法，从金属有机源沉积了低碳含量的氮化硅薄膜。沉积膜的折射率被控制在1.79和1.89的范围内。成功地实现了适用于12英寸晶片的大面积沉积。