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Basic research on intra-board broad-band optical interconnects for high-performance system integration

Basic research on intra-board broad-band optical interconnects for high-performance system integration
高性能系统集成板内宽带光互连基础研究
批准号:
15206008
负责人:
URA Shogo
金额:
$20.8万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2005

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中文摘要
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英文摘要
Intra-board chip-to-chip optical interconnects with wavelength-division multiplexing (WDM) was investigated as one of strong candidates for solving the so-cold pin-bottle-neck problem occurred in future high-performance system integration.An integration of focusing grating couplers (FGCs) and distributed Bragg reflectors (DBRs) for constructing optical add-drop multiplexers in an optical waveguide board was theoretically and experimentally investigated and demonstrated. An interference exposure system was also designed and constructed to integrate DBRs with precise control of the grating periods.Reduction of insertion loss was discussed and tried for high-bit-rate signal transmission of Gbps. New structure was proposed for both reduction of the insertion loss and enhancement of the wavelength multiplexing range. Novel fabrication process was developed to fabricate the structure. The loss was reduced by 10dB.WDM signal transmission using two wavelengths in the fabricated optical waveguide was tested. Clear eye patterns were successfully observed.A circuit model of the photodiode has been proposed for design of the optoelectronic systems. The model includes the effects of the photo sensitivity, the transimpedance amplifier, and the bandwidth circuit. The model was applied to a GaAs PIN photodiode with pre-amplifier, and allows that the simulation of the output characteristics at 3.2GHz.Silicon nitride film with considerably low carbon concentration has been deposited from a metalorganic source by a new radical beam deposition method. The refractive index of the deposited film was controlled in the range of 1.79 and 1.89. Large-area deposition applicable to a 12-inch wafer was successfully achieved.
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Potential of SiN_X films fabricated by radical-beam deposition technique for passivation of organic devices
自由基束沉积技术制备的 SiN_X 薄膜用于有机器件钝化的潜力
DOI: --
发表时间: 2004
期刊: Extended Abstracts 23rd Electronic Materials Sympo.
影响因子: --
作者: [T.Yamao, K.Taguchi, M.Yoshimoto, S.Fujita]
通讯作者: S.Fujita
K.Yokota, R.Satoh, Y.Iwata, K.Fujimoto, S Ura, K.Kintaka: "Development of Au reflection film with high adhesion for optical interconnection between LSI chips"Technical Digest, 36th International Symposium on Microelectronics. 756-761 (2003)
K.Yokota、R.Satoh、Y.Iwata、K.Fujimoto、S Ura、K.Kintaka:“开发用于 LSI 芯片之间光学互连的高粘附性金反射膜”技术文摘,第 36 届国际微电子研讨会。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
Modeling of Strain Induced by Compositional Variation in Wafer-Shaped Bulk Mixed Crystals
晶圆状块体混合晶体中成分变化引起的应变建模
DOI: --
发表时间: 2004
期刊: Japanese Journal of Applied Physics Vol.43, No.8A
影响因子: --
作者: [Md.Rafiqul Islam, Parbhat Verma, Akira Hiroki, Masayoshi Yamada]
通讯作者: Masayoshi Yamada
Radical Beam Deposition of Silicon Nitride towards Passivation for Organic Devices
氮化硅的自由基束沉积对有机器件的钝化
DOI: --
发表时间: 2005
期刊: 2005 Materials Research Society Fall Meeting, Symposium D : Organic and Nanostructured Composite Photovoltaics and Solid-State Lighting, Boston, November 27-December 2
影响因子: --
作者: [K.Taguchi, M.Yamashita, M.Yamazaki, A.Chayahara, Y.Horino, T.Iwade, M.Yoshimoto]
通讯作者: M.Yoshimoto
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