Development of laser terahertz emission microscope and its application to LSI defect analysis

激光太赫兹发射显微镜的研制及其在LSI缺陷分析中的应用

• 批准号: 16206036
• 负责人: TONOUCHI Masayoshi
• 金额: $ 32.36万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16206036/
• 关键词: femtosecond laser; Terahertz waves; terahertz emission microscope; LSI defect analysis; defect area localization; MOSFET; Test Element Group; non destructive evaluation

This project aims to develop a laser terahertz (THz) emission microscope (LTEM) and explore its applications. The principle uses the THz radiation excited from many electronic materials with an illumination of femtosecond laser. The research subjects examined here are 1) designing and manufacturing the prototype of LTEM, 2) the evaluation of its performance and improvement, and 3) applications to observe various electronic materials and devices.We developed a free space type and scanning fiber probe type LTEM with either reflection mode or transmission one. The performance has been evaluated by using mode made line and space specimen. The minimum resolution for the free space type and probe one is better than 2 μm and 1.5 μm, respectively.First, the LTEM has been applied to see ferroelectric domain in multiferroic BiFeO_3 (BFO) thin films. We discovered the THz emission effect from BFO for the first time, and successfully visualized the feroelectoric domain. Then we applied LTEM to image an operational amplifier while operating, and successfully visualized the only signal lines related to amplifying process in the device. Finally, we examined its application to LSI defect analysis. We success fully distinguished damaged MOSFET in the Test Element Group from undamaged. The results prove that LTEM is promising new type of microscope for device evaluation such as LSI as well as various electronic materials. One can expect that LTEM can be improved to be available for dynamic microscope.

本项目旨在研制一台太赫兹(THz)激光发射显微镜并探索其应用。其原理是在飞秒激光照射下，从许多电子材料中激发出太赫兹辐射。本课题的研究内容包括：1)设计和制造激光瞬变显微镜样机；2)评价其性能和改进；3)应用于观察各种电子材料和器件。用模型制作的线状和空间试件对其性能进行了评价。自由空间型和探针型的最小分辨率分别优于2μm和1.5μm。首先，我们将其用于观察多铁性BiFeO_3(BFO)薄膜中的铁电畴。我们首次发现了BFO的太赫兹发射效应，并成功地可视化了费电区域。在此基础上，利用LTEM对运算放大器进行了实时成像，成功地对器件中与放大过程有关的唯一信号线进行了可视化。最后，我们考察了它在大规模集成电路缺陷分析中的应用。我们成功地在测试元件组中完全区分了损坏的MOSFET和未损坏的MOSFET。结果表明，LTEM是一种很有前途的新型显微镜，可用于大规模集成电路和各种电子材料等器件的评价。可以预期的是，LTEM可以改进，以适用于动态显微镜。

项目成果

Imaging of large-scale integrated circuits using laser terahertz emission microcopy

使用太赫兹激光发射显微镜对大规模集成电路进行成像

• 发表时间: 2005
• 期刊: OPTICS EXPRESS 13・1
• 作者: Li;ZE;Yeong;Hee;CHO;Yusuke;KAWAKAMI;M.Yamashita
• 通讯作者: M.Yamashita

光ファイバを用いたコンパクトテラヘルツ時間分解分光システム

使用光纤的紧凑型太赫兹时间分辨光谱系统

• 发表时间: 2004
• 期刊: Technical Report of IEICE THz-04
• 作者: Tackya Yammouch;Hirotaka Sugawara;Kenichi Okada;Kazuya Masu;井上亮太郎
• 通讯作者: 井上亮太郎

Evaluation of spatial resolution in laser-terahertz emission microscope for inspecting electrical faults in integrated circuits

用于检查集成电路电气故障的激光太赫兹发射显微镜的空间分辨率评估

• 发表时间: 2004
• 期刊: Proceedings of SPIE-Terahertz and Gigahertz Electronics and Photonics III 5354
• 作者: J.H.Park;M.Mase;S.Kawahito;M.Sasaki;Y.Wakamori;Y.Ohta;M.Yamashita
• 通讯作者: M.Yamashita

テラヘルツ時間流域分光法

太赫兹时域光谱

• 发表时间: 2006
• 期刊: 電子情報通信学会誌 80・6
• 作者: H Yamada;N Uchiyama;A Matsumoto;H Kitaguchi;H Kumakura;斗内政吉
• 通讯作者: 斗内政吉

テラヘルツ時間領域分光

太赫兹时域光谱

• 发表时间: 2005
• 期刊: オプトロニクス 24・11
• 作者: K. Masu;K. Okada;and H. Ito;山本 高至;斗内政吉
• 通讯作者: 斗内政吉