Control of single electrons using bonor levels in silicon

使用硅中的硼能级控制单电子

• 批准号: 16206038
• 负责人: ONO Yukinori
• 金额: $ 30.78万
• 依托单位: NTT Basic Research Laboratories
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16206038/
• 关键词: donor; single electron; dopant; acceptor; single-electron turnstile; ドナー; 単一電子; ドーパント; アクセプタ; 単電子ターンスタイル

Recent advances in semiconductor processing technology have drawn attention to single-electron manipulation techniques that utilize the electrostatic energy of electrons confined to minute regions. This technology involves the use of so-called artificial atoms and artificial molecules, and has a very wide range of applicable fields including integrated circuits, sensors, electorical standards, lasers and quantum computers. Our goal is to establish completely new single-electron manipulation techniques that use actual atoms of semiconductor material(true atoms) instead of artificial atoms. Our research relating to this submission is the first step towards achieving this goal, and uses donor sites introduced into silicon as "true atoms". In particular, we aim to establish techniques for the detection of individual donor sites and the capture and release of individual donor electrons.Considering the vast amount of technology that has already been accumulated with regard to dopants and the spill-overeffects of their applications, it is desirable that single-donor control is performed using silicon In this study, we mainly employed phosphorus and boron as the dopants because their behavior in silicon has been researched for a long time, By investigating ionization phenomena under a strong electric field from the freeze-out state of a macro-size MOS transistor including large quantities of dopant(phosphorus or boron) in the channel, we have shown that it is possible to perform charge control with an electric field. We have also succeeded in the detection of single boron atoms in a nano-transistor. These results are the principal aim of this research topic, and it can thus be considered that the aims of this study have been achieved.

半导体处理技术的最新进展已经引起了对利用被限制在微小区域的电子的静电能的单电子操纵技术的关注。该技术涉及使用所谓的人造原子和人造分子，并且具有非常广泛的应用领域，包括集成电路、传感器、电子标准、激光器和量子计算机。我们的目标是建立全新的单电子操纵技术，使用半导体材料的实际原子（真正的原子）而不是人造原子。我们与此提交的研究是实现这一目标的第一步，并使用引入硅中的供体位点作为“真正的原子”。特别地，我们的目标是建立用于检测单个施主位点以及捕获和释放单个施主电子的技术。考虑到已经积累的关于掺杂剂及其应用的溢出效应的大量技术，希望使用硅进行单施主控制。我们主要采用磷和硼作为掺杂剂是因为它们在硅中的行为已经研究了很长时间，通过研究含有大量掺杂剂的宏尺寸MOS晶体管在强电场下的冻结态电离现象，通过在沟道中引入（磷或硼），我们已经表明可以用电场进行电荷控制。我们还成功地检测了纳米晶体管中的单个硼原子。这些结果是本研究课题的主要目的，因此可以认为本研究的目的已经实现。

项目成果

Charge-state control of phosphorus donors in silocon-on-insulator Metal-oxide-semiconductor field-effect transistors

绝缘体上硅金属氧化物半导体场效应晶体管中磷供体的电荷态控制

• 发表时间: 2005
• 期刊: Japanese Journal of Applied Physics Vol.44,No.4B
• 作者: Kazuya;Masu;Yukinori Ono
• 通讯作者: Yukinori Ono

Anomalous resistance ridges along filling factor v=4i

沿填充因子 v=4i 的异常电阻脊

• 发表时间: 2007
• 期刊: Phys. Rev. Letts. 99
• 作者: K. Takashima;M. Brun;T. Ota;D. K. Maude;A. Fujiwara;Y. Ono;Y. Takahashi;and Y. Hirayama
• 通讯作者: and Y. Hirayama

Charge-state control of phosphorus donors in SOI MOSFET

SOI MOSFET 中磷施主的电荷状态控制

• 发表时间: 2004
• 作者: 澤本佳和;森田耕次;原田幸博;吉貝滋;深田良雄;田中直樹;Y.Ono
• 通讯作者: Y.Ono

Single-electron manipulation Interplay with crystalline imperfection

单电子操纵与晶体缺陷的相互作用

• 发表时间: 2005
• 作者: J.T.Okada;M.Inui;D.Ishikawa;S.Tsutsui;A.Q.R.Baron;K.Matsuda;Y.Yokoyama;Y.Watanabe;T.Ishikawa;S.Nanao;R. TAKAKI;Y. Ono
• 通讯作者: Y. Ono

Room- temperature single-electron transfer and detection with silicon nanodevices

硅纳米器件的室温单电子转移和检测

• 发表时间: 2004
• 作者: K. Ohashi;T. Yammouch;M. Kimura;H. Ito;K. Okada;K. Ishida;K. Itoi;M. Sato;T. Ito;and K. Masu;Yuji MURAKAMI;K.Nishiguchi
• 通讯作者: K.Nishiguchi