Silicon Single-Dopant Electronics

在这个项目中，我们的目标是实现一种技术，使我们能够通过使用真正的原子或硅中的掺杂剂来操纵单电荷和自旋，而不是使用人造原子或量子点。在这里，我们建立了识别晶体管中单个掺杂剂位置的方法，并阐明了每种掺杂剂对晶体管特性的影响。此外，我们还利用嵌入在硅中的掺杂剂实现了控制单电荷运动的“原子装置”。

In this project, we aim at the realization of technologies that enable us to manipulate single charges and spins, by using a true atom, or, dopant in silicon, rather than by using an artificial atoms, or quantum dots. Here, we established the way of identifying the position of individual dopants in a transistor and also clarified how each dopant had an impact on the transistor characteristics. In addition, we realized the "atom device" that controls motion of single charges by using a dopant embedded in silicon.