Study of excited-state dynamics on the quasi-two dimensional system of reconstrucetd semiconductor surfaces
重构半导体表面准二维系统的激发态动力学研究
基本信息
- 批准号:17204025
- 负责人:
- 金额:$ 30.04万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (A)
- 财政年份:2005
- 资助国家:日本
- 起止时间:2005 至 2007
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The purpose of this project is to elucidate the dynamical properties of excited states on semiconductor surfaces, a typical quasi-two dimensional system, from a unified view point. For this purpose, we tried to apply experimental methods that probe directly the relaxation dynamics of electronically excited states with fs-temporal resolution and structural changes at the atomic level. The former has been achieved by two-photon photoemission (2PPE) spectroscopy, while the latter by the scanning tunneling microscopy (STM). The knowledge of the dynamics provides fundamental basis on which mechanisms of structural response of the surfaces can be understood from microscopic point of view. Main results obtained are summarized below.1) By using tunable fs-laser pulses as pump pulses, hot-carrier dynamics in Si, including the inter-valley scattering, intra-valley scattering, energy relaxation have been probed directly to obtain quantitative values of relaxation rates. Also, ultrafast carrier sc … More attering into surface states have been demonstrated for Si (001)-(2x1).2) The photoinduced structural changes on covalent semiconductor surfaces with different symmetries and structural properties have been studied systematically for Si (111)-(7x7), Si (001)-(2x1), Si (111)-(2x1), and InP (110)-(1x1). The mechanism of the instability has been identified to be the two-hole localization, which describes quantitatively and systematically the observed features of sensitive structural responses of the surfaces. Thus, we could solve almost completely one of the most important problems of surface science.3) The fundamental mechanism of low-energy electrons less than 15 eV with surfaces have been elucidated by our extensive studies by means of direct observation of surface structural changes at the atomic level.Non-elastic excitation of both the surface localized states, like Si-H bond, and Plasmon generation leads to the local structural changes on Si surfaces.4) The mechanism of tunneling-current induced local bond rupture of surface atoms has been identified to be the two-hole localization mechanism, similar to the case of laser excitation. The hole injection from STM tips to a surface region of atomic level is thus modified with a controlled fashion.5) A new type of surface structural changes of photoinduced structural phase transition fromGraphite-to-Diamond has been discovered for the first time under ultrafast laser excitation at visible region. These results have provided us crucial knowledge for establishing thorough understanding of the dynamical properties of semiconductor surfaces, viewed as a new class of condensed matters with two-dimensionality. Less
本项目的目的是从统一的角度阐明半导体表面这一典型的准二维系统的激发态的动力学性质。为此,我们尝试用实验方法直接探测电子激发态的弛豫动力学,具有fs-temporal分辨率和原子水平上的结构变化。前者是通过双光子光发射光谱(2PPE)实现的,后者是通过扫描隧道显微镜(STM)实现的。动力学知识为从微观角度理解表面结构响应机制提供了基础。获得的主要结果总结如下。1)利用可调谐fs激光脉冲作为泵浦脉冲,直接探测了Si中的热载流子动力学,包括谷间散射、谷内散射和能量弛豫,得到了弛豫速率的定量值。此外,Si (001)-(2x1)的超快载流子sc…2)系统地研究了Si (111)-(7x7)、Si (001)-(2x1)、Si (111)-(2x1)和InP (110)-(1x1)在不同对称和结构性质的共价半导体表面上的光致结构变化。双孔局域化可以定量、系统地描述表面敏感结构响应的观测特征。这样,我们几乎可以完全解决表面科学中最重要的问题之一。3)我们通过在原子水平上直接观察表面结构变化的广泛研究,阐明了小于15 eV的低能电子与表面的基本机理。表面局域态(如Si- h键)的非弹性激发和等离子体激元的产生都会导致Si表面的局部结构变化。4)隧道电流诱导表面原子局部键断裂的机制与激光激发类似,为双空穴局域化机制。因此,从STM尖端到原子水平表面区域的空穴注入以一种可控的方式进行了修改。5)在可见光区超快激光激发下,首次发现了石墨到金刚石的光致结构相变的一种新型表面结构变化。这些结果为我们建立对半导体表面动力学性质的透彻理解提供了重要的知识,半导体表面被视为一类新的二维凝聚态物质。少
项目成果
期刊论文数量(68)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Excitation-induced atomic desorption and structural instability of III-V compound scmiconductor surfaces
III-V族化合物半导体表面的激发诱导原子解吸和结构不稳定性
- DOI:
- 发表时间:2008
- 期刊:
- 影响因子:0
- 作者:K.Tanimura;J.Kanasaki
- 通讯作者:J.Kanasaki
Electronic properties and electron dynamics on the Si(001)-(2×1) surface with C-defects
具有C缺陷的Si(001)-(2×1)表面的电子特性和电子动力学
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:S.Tanaka;K.Tanimura
- 通讯作者:K.Tanimura
Density-dependent ultrafast carrier dynamics on Si(001)-(2×1)
Si(001)-(2×1) 上密度相关的超快载流子动力学
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:T.Ichibayashi;K.Tanimura.
- 通讯作者:K.Tanimura.
Laser-induced removal of fragmentary intact sheets and transformation into new structural phases on sraphite (0001) surface
激光诱导去除碎片完整片材并转变为石墨矿 (0001) 表面上的新结构相
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:J.Kanasaki;K.Tanimura
- 通讯作者:K.Tanimura
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TANIMURA Katsumi其他文献
TANIMURA Katsumi的其他文献
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{{ truncateString('TANIMURA Katsumi', 18)}}的其他基金
Innovation of structural materials science: Femtosecond time-resolved atomic imaging
结构材料科学的创新:飞秒时间分辨原子成像
- 批准号:
24000006 - 财政年份:2012
- 资助金额:
$ 30.04万 - 项目类别:
Grant-in-Aid for Specially Promoted Research
Dynamical studies of photoinduced structural phase transitions
光致结构相变的动力学研究
- 批准号:
19001002 - 财政年份:2007
- 资助金额:
$ 30.04万 - 项目类别:
Grant-in-Aid for Specially Promoted Research
PHOTOINDUCED PHASE TRANSITION IN QUASI ONE-DIMENSIONAL ORGANIC CRYSTALS BY MEANS OF THE-RESOLVED RAMAN SCATTERING SPECTROSCOPY
利用分辨拉曼散射光谱研究准一维有机晶体中的光致相变
- 批准号:
15340097 - 财政年份:2003
- 资助金额:
$ 30.04万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Carrier dynamics of semiconductor surfaces by means of femtosecond two-photon photoelectron spectroscopy
通过飞秒双光子光电子能谱研究半导体表面的载流子动力学
- 批准号:
12440087 - 财政年份:2000
- 资助金额:
$ 30.04万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Nonlinear interaction of excitons and photoinduced phase transition in quasi-one dimensional organic charge-transfer crystals
准一维有机电荷转移晶体中激子的非线性相互作用和光致相变
- 批准号:
11215204 - 财政年份:1999
- 资助金额:
$ 30.04万 - 项目类别:
Grant-in-Aid for Scientific Research on Priority Areas (B)
Study of photo-induced atomic processes on semiconductor surfaces by means of femtosecond spectroscopy
利用飞秒光谱研究半导体表面光致原子过程
- 批准号:
09440115 - 财政年份:1997
- 资助金额:
$ 30.04万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Femtosecond spectroscopy for the dynamics of relaxation of excitons in solids with strong electron-phonon coupling
用于强电子声子耦合固体中激子弛豫动力学的飞秒光谱
- 批准号:
04452040 - 财政年份:1992
- 资助金额:
$ 30.04万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Study of recombiration-induced atomic processes associated with deep level in compound semicmductors by meano of cascade excitation spectroscopy
级联激发光谱研究化合物半导体深能级复合诱发原子过程
- 批准号:
60540202 - 财政年份:1985
- 资助金额:
$ 30.04万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
相似海外基金
Photoinduced phase transition described by Hilbert space anomaly and quantum friction
希尔伯特空间异常和量子摩擦描述的光致相变
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17K05509 - 财政年份:2017
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Photoinduced phase transition mechanism in strongly correlated transition metal oxide system revealed by time-resolved x-ray diffraction
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Anisotropic photoinduced phase transition and its applications in holographic nanocomposites
各向异性光致相变及其在全息纳米复合材料中的应用
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15H03576 - 财政年份:2015
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Photoinduced phase transition of lipid / water / photo-functional surfactant system to obtain membrane protein crystals.
脂质/水/光功能表面活性剂体系的光致相变获得膜蛋白晶体。
- 批准号:
26410003 - 财政年份:2014
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脉冲X射线研究光致相变动力学
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22740207 - 财政年份:2010
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光致相变的主动控制
- 批准号:
20340074 - 财政年份:2008
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Spectral Anomaly and Ultrafast Phenomena in Photoinduced Phase Transition Systems
光致相变系统中的光谱异常和超快现象
- 批准号:
19540350 - 财政年份:2007
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Theory for Photoinduced Phase Transition Dynamics in Molecular Low-Dimensional Conductors
分子低维导体光致相变动力学理论
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阐明强相关电子系统中光致相变的初始动力学
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强相关电子体系有机自由基晶体光致相变研究
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