Study of recombiration-induced atomic processes associated with deep level in compound semicmductors by meano of cascade excitation spectroscopy

级联激发光谱研究化合物半导体深能级复合诱发原子过程

• 批准号: 60540202
• 负责人: TANIMURA Katsumi
• 金额: $ 0.77万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1985
• 资助国家: 日本
• 起止时间: 1985 至 1986
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-60540202/
• 关键词: compound semiconductors; deep level; non-radiative recombination; extrinsic self-trapped exciton; 格子緩和; 原子過程

Electron-hole recombination process folling pulsed electronic excitation in n-type GaP has been studied by measn of time-resolved optical techniques including absorption and luminescence measurements, photoelastic dilatation measurements and cascade excitation spectroscopy. A mid-gap luminescence band situating at 1.53 eV with a fullwidth at half maxima of 0.25 eV is induced, as well as luminescence due to donor-acceptor recombination. The mid-gap luminescence decays exponentially, indicating that it is emitted by a transition within a localized center. The formation of the state responsible for this luminescence is associated with large lattice distortion of a tenth of molecular volume, which was determined by a direct measurement of the transient volume change. The fomation yield of the center show a saturation for the excitation density of <10^(18)> <cm^(-3)> , and the estimated maximum concentration of the center is about <10^(17)> <cm^(-3)> . Thus the center is apparently related to imperfections existing in specimen prior irradiation. The result observed can only be interpreted in terms of exitsinsic self-trapped exciton.

用时间分辨光学技术，包括吸收和发光测量、光弹膨胀测量和级联激发光谱，研究了n型带隙中脉冲电子激发下的电子-空穴复合过程。诱导了一个位于1.53 eV的中间禁带发光带，半峰宽为0.25 eV，以及施主-受主复合发光。间隙中的发光呈指数衰减，表明它是由局域中心内的跃迁发射的。这种发光状态的形成与分子体积十分之一的大晶格扭曲有关，这是通过直接测量瞬时体积变化来确定的。中心的生成产额对&lt；10^(18)&gt；&lt；cm^(-3)&gt；的激发密度呈现饱和状态，估计中心的最大浓度约为&lt；10^(17)&gt；&lt；cm^(-3)&gt；。因此，该中心显然与辐照前样品中存在的缺陷有关。观察到的结果只能用激子自陷态激子来解释。

项目成果

柴田浩正(Hiromasa Shibata): Phys.Rev.Lett.

柴田博正：Phys.Rev.Lett。

Hiromasa Shibata: "Highly distorted metastable state formed upon electron-hole recombination in GaP." Phys. Rev. Lett.

Hiromasa Shibata：“GaP 中电子-空穴复合时形成高度扭曲的亚稳态。”

Hiromasa Shibata: "Study of deep level centers at excited states in GaP by means of transient optical absorption spectroscopy." Appl. Phys. Lett.49. 877-879 (1986)

Hiromasa Shibata：“通过瞬态光学吸收光谱研究 GaP 中激发态的深能级中心。”

柴田浩正(Hiromasa Shibata): Appl.Phys.Lett.49. 877-879 (1986)

Hiromasa Shibata：应用物理快报 877-879 (1986)。