Research on hexagonal boron nitride semiconductors

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We demonstrate that (0001) hexagonal boron nitrides (h-BN) are epitaxially grown on (111) Ni and (0001) sapphire substrates by metalorganic vapor phase epitaxy. A near-band-gap ultraviolet emission peak centered at energy of 5.47eV (227nm) is clearly observed in cathodoluminescence spectra at room temperature from the h-BN epitaxial layers. The photon energy dependence of the squared absorption coefficient is linear, indicating a direct band gap in the h-BN, and the optical band gap is determined to be 5.9eV. The h-BN has a promising as an optoelectronic material in the deep ultraviolet spectral region.