Development of large-area X-ray imaging detectors with energy discrimination capability for medical use.

大型x射线成像探测器阵列使用单晶与能源歧视能力研究了厚CdTe层生长在硅衬底的摘要汽相外延。探测器结构为高阻厚p-CdTe/n-缓冲CdTe/n^+-Si衬底。建立了p-CdTe层和n-CdTe层的生长和碘掺杂条件。还建立了预处理硅衬底以获得高质量CdTe生长的方法。

Large scale X-ray imaging detector arrays with energy discrimination capabilities have been studied using single crystal thick CdTe layers grown on Si substrate by metalorganic vapor phase epitaxy. Structure of the detector was high-resistive thick p-CdTe/n-buffer CdTe/n^+-Si substrates. Growth and iodine doping conditions for p-CdTe and n-CdTe layers were established. Pretreatment of Si substrates for high quality CdTe growth was also established.