Development of high performance large-area X-lay imaging detectors with energy discrimination capabilities

对类p型CdTe/n-CdTe/n+-Si异质结二极管型辐射探测器的性能改进进行了研究。采用金属有机气相外延的方法在Si衬底上生长CdTe层，制备了二极管型探测器。通过集成二极管型探测器，制备了8x8二维成像探测器阵列。利用这些阵列获得了能量分辨x射线图像。实现了24.5x24.5 mm2大衬底和20x20高集成密度的二维探测器阵列。

Improvement of performance of p-like CdTe/n-CdTe/n+-Si heterojunction diode type radiation detectors has been studied. The diode type detectors were fabricated with CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy. 8x8 2-dimensional imaging detector arrays were also fabricated by integrating the diode type detectors. Energy discriminated X-ray images were obtained with these arrays. 2-dimensional detector arrays with large substrates size of 24.5x24.5 mm2 and high integration density of 20x20 were also realized.