课题基金 / 基金详情

Fabrication of ordered nano-and microstructures on semiconductors using self-organized materials and their applications

Fabrication of ordered nano-and microstructures on semiconductors using self-organized materials and their applications
利用自组织材料在半导体上制备有序纳米和微米结构及其应用
批准号:
20241026
负责人:
ONO Sachiko
金额:
$29.7万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2008
资助国家:
日本
项目状态:
已结题
起止时间:
2008 至 2011

项目摘要

项目成果

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相关文献

中文摘要
翻译
我们开发了新的制造技术,这是无法实现的传统光刻技术的基础上的干工艺,半导体(硅,砷化镓,和InP)和轻金属(铝和钛)形成有序的纳米和微米结构的湿法工艺使用的结构特征自发产生的图案。
英文摘要
We developed novel fabrication techniques, which are not achievable by conventional lithography techniques based on the dry process, for semiconductors(Si, GaAs, and InP) and light metals(Al and Ti) to form ordered nano-and microstructures by wet process using the structural feature of spontaneously generated patterns.
期刊论文(255)
专著(0)
科研奖励(0)
会议论文
Fabrication of Self-Organized Nanoporous Oxide Semiconductors by Anodization
通过阳极氧化制备自组织纳米多孔氧化物半导体
DOI: --
发表时间: 2008
期刊:
影响因子: --
作者: [S. Ono, R. Kobayashi, Y. Kobayashi, H. Asoh]
通讯作者: H. Asoh
Evaluation of Photocatalytic Activity of Nanoporous ZnO Films Prepared by Anodization
阳极氧化纳米多孔ZnO薄膜光催化活性评价
DOI: --
发表时间: 2008
期刊:
影响因子: --
作者: [Y. Kobayashi, H. Asoh, S. Ono]
通讯作者: S. Ono
Fabrication of GaAs Pore Arrays with High Aspect Ratio by Anodic Etching through Photoresist Mask
光刻胶掩模阳极刻蚀制备高深宽比 GaAs 孔隙阵列
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [S.Kotaka, H.Asoh, S.Ono]
通讯作者: S.Ono
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [小林大記, 阿相英孝, 小野幸子]
通讯作者: 小野幸子
273
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    • 批准号:
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    • 项目类别:
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    • 资助金额:
      $3.24万
    • 财政年份:
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    • 资助金额:
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      2003
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    • 批准号:
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    • 项目类别:
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    • 资助金额:
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    • 财政年份:
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