Fabrication of porous oxide films with three dimensional ordered periodicity on semiconductors and metals bawd on colloidal crystal templating and its applications

胶体晶体模板在半导体和金属上制备三维有序周期性多孔氧化物薄膜及其应用

• 批准号: 17310077
• 负责人: ONO Sachiko
• 金额: $ 9.24万
• 依托单位: Kogakuin University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2005
• 资助国家: 日本
• 起止时间: 2005 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17310077/
• 关键词: Micro-; nano-devices; Nanomaterials; Advanced functional-devices; Colloidal crystals; Self-organization; Material processing; 走査プローブ顕微鏡

Nanopatterning processes based on a localized anodization of Si and the subsequent chemical etching of SiO2 were developed to fabricate a dot array and a hole array on a Si surface using self-organized anodic porous alumina as a mask. We have also fabricated micro/nano structured Si surfaces by a combination of colloidal crystal templating, hydrophobic treatment and subsequent metal-assisted chemical etching. The proposed patterning processes of the Si surface have potential technological applications in fields that need textured surfaces of controlled nanoscale periodicity and morphology owing to their relative simplicity and low cost. In addition, the electrochemical etching of aluminum foils using a honeycomb oxide mask was studied to directly control the initiation sites of pits independent of the surface activation state of the substrate. The transfer of the hexagonally ordered pattern of self-assembled colloidal spheres to the oxide film could be achieved by the localized anodization in neutral electrolyte. That is, etch pits were generated only in the intersp aces of honeycomb oxide mask formed on the aluminum surface. Based on this process, the dispersibility of the initiation sites of pits was improved clearly in comparison with that for the conventional method.

基于局部阳极氧化的Si和随后的SiO2的化学蚀刻的纳米图案化工艺被开发用于使用自组织阳极多孔氧化铝作为掩模在Si表面上制造点阵列和孔阵列。我们还制作了微/纳米结构的硅表面的胶体晶体模板，疏水处理和随后的金属辅助化学蚀刻的组合。所提出的Si表面的图案化工艺由于其相对简单和低成本而在需要受控的纳米级周期性和形态的纹理化表面的领域中具有潜在的技术应用。此外，电化学腐蚀铝箔使用蜂窝状氧化物掩模进行了研究，直接控制坑的起始位置独立的基板的表面活化状态。中性电解液中的局部阳极氧化可以实现自组装胶体球的六方有序图案向氧化膜的转移。也就是说，仅在铝表面上形成的蜂窝状氧化物掩模的间隙中产生蚀刻坑。与传统方法相比，该方法明显改善了点蚀起始点的定位。

项目成果

Nano-structure Control of Magnesium Surfaces and their Functionalization

镁表面的纳米结构控制及其功能化

• 发表时间: 2007
• 期刊: Kino Zairyo 27(7)
• 作者: S.;Ono;H.;Asoh
• 通讯作者: Asoh

アノード酸化アルミナ皮膜の誘電特性に対する電解液種の影響

电解质类型对阳极氧化铝膜介电性能的影响

• 发表时间: 2008
• 作者: 端本 健;阿相 英孝;小野 幸子
• 通讯作者: 小野 幸子

ニオブアノード酸化皮膜の成長機構と特性評価(依頼講演)

铌阳极氧化膜的生长机理及特性评价（特邀报告）

• 发表时间: 2008
• 作者: 新井 房雄;阿相 英孝;小野 幸子;小野 幸子;小野 幸子
• 通讯作者: 小野 幸子

Patterning of Silicon by Site-Selective Etching and Metal Deposition throueh Colloidal Crystal Templating(Invited lecture)

通过胶体晶体模板进行位点选择性蚀刻和金属沉积的硅图案化（特邀报告）

• 发表时间: 2007
• 作者: S. Ono;F. Arai;S. Sakamoto;H. Asoh
• 通讯作者: H. Asoh

チタン多孔体への水酸アパタイト電着における析出分布の改善

多孔钛材料电沉积羟基磷灰石沉淀分布的改善

• 发表时间: 2007
• 作者: 児玉 アニタ;阿相 英孝;小笠原 忠司;大西 隆;小野 幸子
• 通讯作者: 小野 幸子