Spin wave excitation in metallic nano-hetero structures and fabrication of high frequency devices

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Current-Perpendicular-to-Plane Giant Magnetoresistance (CPP-GMR)nano-hetero devices with bottom free layers were fabricated on Si substrates and the spin-transfer-torque-induced rf oscillation was measured. The intensity of the oscillation became large and the half width reduced when the magnetic field was applied 90° from the easy axis and the current was between 3 mA and 7 mA. Also, a pseudo-point-contact GMR device on a coplanar waveguide with low high-frequency loss was fabricated. The high-frequency loss was reduced by 10%.