Spin wave excitation in metallic nano-hetero structures and fabrication of high frequency devices

金属纳米异质结构中的自旋波激发和高频器件的制造

• 批准号: 20246002
• 负责人: ANDO Yasuo
• 金额: $ 33.11万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-20246002/
• 关键词: スピン流; スピン注入; 垂直磁気異方性; 金属ナノヘテロ構造; CPP-GMR; ダンピング定数; スピントルク; スピン波; Co/Pd; L1_0-FePt; CoPt; 強磁性共鳴; スピン侵入長

Current-Perpendicular-to-Plane Giant Magnetoresistance (CPP-GMR)nano-hetero devices with bottom free layers were fabricated on Si substrates and the spin-transfer-torque-induced rf oscillation was measured. The intensity of the oscillation became large and the half width reduced when the magnetic field was applied 90° from the easy axis and the current was between 3 mA and 7 mA. Also, a pseudo-point-contact GMR device on a coplanar waveguide with low high-frequency loss was fabricated. The high-frequency loss was reduced by 10%.

在Si衬底上制备了具有自由底层的电流垂直巨磁阻（CPP-GMR）纳米异质器件，并测量了自旋-传递转矩诱导的射频振荡。当磁场与易轴呈90°方向，电流在3 ~ 7 mA之间时，振荡强度增大，半宽减小。在共面波导上制备了低高频损耗的伪点接触GMR器件。高频损耗降低了10%。

项目成果

スピンポンプを用いた強磁性体の横スピン侵入長測定

使用自旋泵测量铁磁材料的横向自旋穿透深度

• 发表时间: 2009
• 作者: 宮崎牧人;原田崇広;大兼幹彦;谷口知大;玉川聖
• 通讯作者: 玉川聖

高反平行結合強度を有する積層フェリ構造を用いたMTJにおけるスピン注入磁化反転

使用具有高反平行耦合强度的堆叠铁磁结构实现 MTJ 中的自旋注入磁化反转

• 发表时间: 2009
• 作者: Akinori Ueda;Ryo Sudo;Mariko Ikeda;Ken-ichi Kokubo;Susumu Kudo;Hirosuke Kobayashi and Kazuo Tanishita;西村真之
• 通讯作者: 西村真之

Ferromagnetic Resonance Investigation of Exchange Coupling in Nd_2Fe_<14>B /α-Fe Interfaces

Nd_2Fe_<14>B /α-Fe界面交换耦合的铁磁共振研究

• 发表时间: 2010
• 作者: D. Ogawa;K. Koike;T. Miyazaki;S. Mizukami;T. Akiya;M. Oogane;Y. Ando and H. Kato
• 通讯作者: Y. Ando and H. Kato

Half-metallicity and Gilbert damping constant in Co2FexMn1−xSi Heusler alloys depending on the film composition

• DOI: 10.1063/1.3105982
• 发表时间: 2009-03
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: T. Kubota;S. Tsunegi;M. Oogane;S. Mizukami;T. Miyazaki;H. Naganuma;Y. Ando

Large Tunnel Magnetoresistance of 1056% at Room Temperature in MgO Based Double Barrier Magnetic Tunnel Junction

• DOI: 10.1143/apex.2.083002
• 发表时间: 2009-07
• 期刊: Applied Physics Express
• 影响因子: 2.3
• 作者: Lixian Jiang;H. Naganuma;M. Oogane;Y. Ando