Stacking faults in compound semiconductor nanowires grown by selective-area vapor-phase epitaxy : A first-principles study

点击翻译按钮获取中文摘要

This theoretical study examined the atomic structure of the surface of GaAs, a substance typically used in III-V semiconductor nanowires. Highly reliable calculations (based on first-principles methods) found that the earlier structural models of the high-temperature phase (√19 x √19 phase) are in fact unstable and insufficient. A new model was built and its validity confirmed. Furthermore, the effect of such surface structures, as well as that of the introduction of other group-V elements, on the nano-scale structure of GaAs was predicted.