Study on isopolytypic 4H-AlN/4H-SiC hetero-interface for electronic device applications

为了研究4 H-AlN/4 H-SiC（11-20）异质结的特性，制备了异质结场效应晶体管（HFET）和霍尔器件。在这些器件的制造过程中，完成了SiC相关工艺，即SiC的外延生长和对SiC的离子注入。然而，在AlN的外延生长和后AlN生长工艺中仍然存在一些挑战，导致器件制造不完整。我们将努力解决挑战并完成设备。我们相信，这些设备的特性导致澄清的异质结特性。

To investigate the properties of 4H-AlN/4H-SiC(11-20) heterojunction, heterojunction field-effect transistors(HFET) and Hall devices with the heterojunction were fabricated. In the fabrication process for these devices, SiC related processes, that is, epitaxial growth of SiC and ion implantation to SiC were completed. However, there still remain several challenges in epitaxial growth of AlN and post AlN growth process, resulting that the device fabrication is incomplete. We will try to resolve the challenges and complete the devices. We believe that characterization of these devices lead to clarification of the heterojunction properties.