Low Temperature Formation of SingleCrystal Germanium Thin Film by Laser Annealing for Laminated Structure

点击翻译按钮获取中文摘要

In order to obtain single crystal germanium (Ge) on amorphous substrates, green laser annealing (GLA) for the Ge//Si laminated structure was investigated. We found that the lower Si layer can be crystallized as well as the upper Ge layer. In addition, we also examined CO2infrared laser annealing for the Si//Si laminated structure. The size of poly-Si grains formed by CO2 laser annealing was approximately twice as large (~2 μm) as that by GLA. The upper and lower Si layers were simultaneously crystallized with large grains.