Study of High-Spatial Resolution Strain Measurements in Semiconductor Devices Using Tip-Enhanced Raman Spectroscopy

使用尖端增强拉曼光谱进行半导体器件高空间分辨率应变测量的研究

• 批准号: 23860051
• 负责人: KOSEMURA Daisuke
• 金额: $ 1.91万
• 依托单位: Meiji University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Research Activity Start-up
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-23860051/
• 关键词: tip-enhanced Raman; AFM Raman; Si, SiGe; strain; stress; polarized-Raman; ラマン分光法; 原子間力顕微鏡; 近接場; 歪Si; SiGe; 偏光ラマン; 結晶工学; 半導体物性; 光物性; シリコン; 応力; ラマン散乱

Tip-enhanced Raman spectroscopy (TERS) was realized by combining Raman spectroscopy and atomic force microscopy (AFM). Far-field signal (background) frequently interrupts us to derive the TERS signal from obtained spectra. To suppress the background, the polarization properties of both TERS signal and background were examined in detail. As a result, high-intensity ratio of the TERS signal to background was obtained in the conditions of [110] incidence and p and s polarizations of the incident and scattered lights, respectively. Anenhancement factor of approximately 1.6 〓 105 was obtained by comparing the experimental results and calculations based on the tip-enhanced modeling with the “tip-amplification tensor.” The obtained value of the enhancement factor was higher than the previously reported value of about104. The reason for the high enhancement factor is considered to be the tip apex remaining in the vicinity of the sample surface in the shear-force AFM measurements.

将拉曼光谱和原子力显微镜相结合，实现了尖端增强拉曼光谱。远场信号(背景)经常干扰我们从获得的光谱中提取TERS信号。为了抑制背景，详细研究了TERS信号和背景的偏振特性。结果表明，在入射光和散射光分别为p偏振和S偏振的情况下，TERS信号与背景光具有较高的强度比。通过将实验结果和基于尖端增强模型的计算与“尖端放大张量”进行比较，得到了大约1.6〓的增强因子。获得的增强因子的值高于先前报道的值约104。高增强因子的原因被认为是在剪切力AFM测量中尖端留在样品表面附近。

项目成果

Characterization ofanisotropic strain relaxation after mesaisolation for strained SGOI and SiGe/Si structure with newly developed high-NAand oil-immersion Raman method

采用新开发的高数值孔径和油浸拉曼方法表征应变 SGOI 和 SiGe/Si 结构中隔离后的各向异性应变弛豫

• 发表时间: 2012
• 作者: K. Usuda;D. Kosemura;M. Tomita;A.Ogura;and T. Tezuka
• 通讯作者: and T. Tezuka

Evaluation of Anisotropic Stress Relaxation in Mesa-Shaped Strained Si Layers by FEM Simulation

通过有限元模拟评估台面形应变硅层中的各向异性应力松弛

• 发表时间: 2012
• 作者: Motohiro Tomita;Daisuke Kosemura;Koji Usuda;Tsutomu Tezuka;Atsushi Ogura
• 通讯作者: Atsushi Ogura

Investigation of Phonon DeformationPotentials in Si_<1_x>Ge_x by Oil-ImmersionRaman Spectroscopy

油浸拉曼光谱研究Si_<1_x>Ge_x的声子变形势

• DOI: 10.1143/apex.5.111301
• 发表时间: 2012
• 期刊: Appl. Phys. Express
• 作者: D. Kosemura;K. Usuda;and A. Ogura
• 通讯作者: and A. Ogura

Channel Strain Measurement in 32-nm-Node Complementary Metal-Oxide-Semiconductor Field-Effect Transistor by Raman Spectroscopy

通过拉曼光谱测量 32 纳米节点互补金属氧化物半导体场效应晶体管的通道应变

• DOI: 10.1143/jjap.51.04da04
• 发表时间: 2012
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Rei Yamagishi;Kiyotaka Obunai;Tadao Fukuta;Koichi Ozaki;Yusuke Numata;Munehisa Takei
• 通讯作者: Munehisa Takei

TO Phonon Excitation Using Surface Enhanced Raman Scattering for Stress Evaluation

使用表面增强拉曼散射进行 TO 声子激发进行应力评估

• 发表时间: 2012
• 作者: H. Hashiguchi;M. Takei;D. Kosemura;A.Ogura
• 通讯作者: A.Ogura