Elucidation and control of the mechanism of magnetism in magnetic semiconductors with the high Curie temperature

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In this theme, we aimed to develop the spin-device showing low consumption of energy and enabling high speed and large capacity information processing using magnetic semiconductors with high Curie temperature. The magnetism in the device can be controlled by applying gate voltages. Before (Zn,Cr)Te, we successfully modulated the magnetism (magnitude of the magnetization) in Cr1-xTe whose magnetization shows the distinct curve by making gating devices using an ion liquid. Applying that method to (Zn,Cr)Te, we successfully modulated the magnetism in (Zn,Cr)Te, especially coercivity by gate voltages. These results led the clues of the magnetism in (Zn,Cr)Te.