Smart Advanced Materials/Devices by Laser/Plasma Process

采用激光/等离子工艺的智能先进材料/器件

• 批准号: 10045046
• 负责人: EBIHARA Kenji
• 金额: $ 4.48万
• 依托单位: Kumamoto University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-10045046/
• 关键词: pulsed laser ablation; plasma process; diamondlike carbon; ferroelectrics; nanostructure; nonvolatile memory; heterostructure; carbon nitride; ナノ構造物; 酸化物高温超電導体; 巨大磁気抵抗; レーザアブレーション; 酸化物高温超伝導体; ダイヤモンド状膜; 窒素化合物

In this research program, development of pulsed laser deposition (PLD) using KrF excimer laser and YAG laser has been studied to obtain high-quality thin films and devices. Dynamics of laser produced plasmas was also investigated to understand the growth mechanism of thin films at various deposition conditions in PLD process. We proposed the new PLD process combined with plasma ion implantation and dielectric barrier discharge. In carbon based material preparation, laser induced fluorescence (LIF) method was introduced and showed that C_2 and C_3 exist near the carbon target and off-axis area far the target center. Carbon radicals C, C_2, and C_3 dominate optical property of the diamondlike carbon films. Heterostructures consisting of oxide thin films such as superconducting Y-Ba-Cu-O, ferroelectrics Pb-Zr-Ti-O, colossal magnetoresistivity La-Sr-Mn-O, photonics ZnO have been prepared for field effect transistor, magnetic sensor, light emitting device, and nonvolatile memory device.The CNx thin films deposited in NO ambient gas (50mTorr) showed N/C ratio of 1.0. The ferroelectric Pb-Zr-Ti-O/superconducting Y-Ba-Cu-O/YSZ coated Si substrate heterostructure had the good ferroelectric properties of the remanent polarization (Pr) of 20 μC/cm^2 and the coercive field (Ec) of 40 kV/cm.The La-Sr-Mn-O/MgO showed resistivity peak temperature of 330K and the magnetoresistance of 15% (H=0.7T) at room temperature. The Au/Pb-Zr-Ti/La-Sr-Mn-O/MgO capacitor had Pr of 22 μC/cm^2 and Ec of 27kV/cm. The PLD provides high quality ZnO thin films. The deposited films shows (002), (003) XRD peaks corresponding to c-axis length of 0.529nm. The PLD process developed here is a promising technique to deposit 21 century materials aiming for nanostructures such as nanoparticles, nanocrystals and nanoparticles embedded devices.

在本研究计划中，使用KrF准分子激光器和YAG激光器的脉冲激光沉积（PLD）的发展进行了研究，以获得高质量的薄膜和器件。研究了激光等离子体的动力学，以了解PLD工艺中不同沉积条件下薄膜的生长机理。提出了等离子体离子注入和介质阻挡放电相结合的PLD新工艺。在碳基材料制备中，介绍了激光诱导荧光（LIF）法，发现C_2和C_3存在于碳靶附近和远离靶中心的离轴区域。碳自由基C、C_2和C_3控制了类金刚石薄膜的光学性质。制备了Y-Ba-Cu-O超导薄膜、Pb-Zr-Ti-O铁电薄膜、La-Sr-Mn-O庞磁电阻薄膜、ZnO光子薄膜等异质结构氧化物薄膜，用于场效应晶体管、磁传感器、发光器件和非易失性存储器件。结果表明，Pb-Zr-Ti-O/Y-Ba-Cu-O/YSZ铁电涂层具有良好的铁电性能，其反射极化强度（Pr）为20 μC/cm^2，矫顽场（Ec）为40 kV/cm，室温下的电阻率峰值温度为330 K，磁电阻率为15%（H=0.7T）。Au/Pb-Zr-Ti/La-Sr-Mn-O/MgO电容器的Pr为22 μC/cm ^2，Ec为27 kV/cm。PLD可提供高质量的ZnO薄膜。沉积的薄膜显示出（002）、（003）XRD峰，对应于c轴长度为0.529nm。PLD工艺是一种很有前途的存款21世纪材料的技术，其目标是纳米结构，如纳米颗粒、纳米晶体和纳米颗粒嵌入器件。

项目成果

Y.Yamagata,A.Sharma,J.Narayan,R.M.Mayo,J.W.Newman,K.Ebihara: "Plasma diagnostics during pulsed laser deposition of diamond-like carbon using single crystal graphite and amorphous carbon"Proceedings of the 1999 MRS Fall Meeting. 593. 255-260 (2000)

Y.Yamagata、A.Sharma、J.Narayan、R.M.Mayo、J.W.Newman、K.Ebihara：“使用单晶石墨和无定形碳进行类金刚石碳脉冲激光沉积过程中的等离子体诊断”1999 年 MRS 秋季会议记录。

F.Mitsugi,T.Ikegami,K.Ebihara,J.Narayan,A.M.Grishin: "Properties of the magnetoresistive La_<0.8>Sr_<0.2>MnO_3 film and integration with PbZr_<0.52>Ti_<0.48>O_3 ferroelectrics"Proceedings of the 2000 MRS Spring Meeting. J.3.23. (2000)

F.Mitsugi,T.Ikegami,K.Ebihara,J.Narayan,A.M.Grishin:“磁阻La_<0.8>Sr_<0.2>MnO_3薄膜的特性及其与PbZr_<0.52>Ti_<0.48>O_3铁电体的集成”论文集

T.Ikegami,T.Ohshima,M.Nakao,S.Aoqui,K.Ebihara: "Impression of High Voltage Pulses on Substrate in Pulsed Laser Deposition"AVS 47th International Sumposium/NANO 6 . 956. (2000)

T.Ikegami、T.Ohshima、M.Nakao、S.Aoqui、K.Ebihara：“脉冲激光沉积中高压脉冲对基材的印象”AVS 第 47 届国际研讨会/NANO 6 。

F.Mitsugi,K.Ebihara: "Colossal Magnetresistivity of LSMO films prepared by KrF excimer laser"Extended summaries of the International workshop on Critical Currents and Applications of HTS. 81-82 (2000)

F.Mitsugi、K.Ebihara：“KrF准分子激光制备的LSMO薄膜的巨大磁阻”高温超导临界电流和应用国际研讨会的扩展摘要。

S.Aoqui,T.Ohshima,T.Ikegami,K.Ebihara: "Preparation of the CN_x thin films using NO ambient gas by pulsed laser process"Proceedings of Plasma Science Symposium 2001/The 18^<th> Symposium on Plasma Processing. 623-624 (2001)

S.Aoqui、T.Ohshima、T.Ikegami、K.Ebihara：“通过脉冲激光工艺使用 NO 环境气体制备 CN_x 薄膜”2001 年等离子体科学研讨会论文集/第 18 届等离子体加工研讨会论文集。