Epitaxial growth of Si on Insulator using Ion Beam Induced Epitaxial Crystallization

使用离子束诱导外延结晶在绝缘体上外延生长 Si

• 批准号: 10450012
• 负责人: YAMAMOTO Yasuhiro
• 金额: $ 7.81万
• 依托单位: Hosei University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-10450012/
• 关键词: Hetro Epitaxy; CeO_2; SiGe; SOI; IBIEC; Amorphous Silicon; Interface Reaction; Ion Beam Sputtering; IBIEC; ランプ加熱; 固相エピタキシ; イオンの電子; 核的散乱

During the course of the current research program, we have obtained the following results.1. Electron beam bombardment is very effective for the crystal growth of CeO_2 on Si.2. The crystalline quality of CeO_2 is improved by high energy heavy ion bombardment under the channeling condition .3. In-situ reflection high energy electron diffraction has revealed that using the newly developed sample manipulator with the water-cooled target holder, an amorphous Si thin film without micro crystalline can be formed by the Si evaporation in ultra high vacuum.4. We have tricd the Ion Beam Induced Epitaxial Crystallization for deposited amorphous Si/CeO_2 by High energy Si and Ge ion beam bombardment at the target temperature of 350℃ and 4000 ℃. No IBIEC was observed at the Si/CeO_2 interface, probably due to the SiO_2 formation at the interface as a result of reduction of CeO_2 by the presence of si.5. For another hetero interface of SiGe/Si, IBIEC of SiGe proceeded by the high energy Ge ion bombardment. Germanium layers were vacuum deposited on Si substrates and low energy Ge ions were bombarded towards the Ge/Si interface in order to gradually change the Ge content Si by recoil implantation. Amorphous layers containing Si and Ge were crystallized by the high energy Ge ion bombardment.

在本课题的研究过程中，我们取得了以下成果：1.电子束轰击对CeO_2在Si上的晶体生长是非常有效的。在沟道条件下，高能重离子轰击提高了CeO_2的结晶质量.原位反射高能电子衍射表明，利用新研制的水冷靶保持器，在超高真空下蒸发Si，可以形成无微晶的非晶硅薄膜.本文研究了在350℃和4000 ℃靶温下，用高能Si和Ge离子束轰击沉积的非晶Si/CeO_2薄膜，进行了离子束诱导外延晶化。在Si/CeO_2界面处没有观察到IBIEC，这可能是由于Si_2的存在还原CeO_2而在界面处形成SiO_2所致。对于SiGe/Si的另一异质界面，SiGe的IBIEC是通过高能Ge离子轰击进行的。在Si基片上真空沉积Ge层，利用反冲注入方法将低能Ge离子轰击到Ge/Si界面，逐渐改变Si中Ge的含量。通过高能Ge离子轰击，得到了含Si和Ge的非晶层。

项目成果

T.Inoue,T.Nakamura,S.Nihei,S.Kamata,N.Sakamoto and Y,Yamamoto: "Surface morphology analysis in correlation withcrystallinity of CeO_2 (110) layers on Si (100) stubstrates"J.Vac.Sci.Technol.A. 18(4). 1613-1616 (2000)

T.Inoue，T.Nakamura，S.Nihei，S.Kamata，N.Sakamoto 和 Y，Yamamoto：“与 Si (100) 基质上 CeO_2 (110) 层结晶度相关的表面形貌分析”J.Vac.Sci。

T.Inoue,T.Nakamura,S.Nihei,S.Kamata,N.Sakamoto and Y.Yamamoto: "Surface morphology analysis in correlation with crystallinity of CeO_2(110) layers on Si(100) substrates"J.Vac.Sci.Technol.A. 18. 1613-1616 (2000)

T.Inoue、T.Nakamura、S.Nihei、S.Kamata、N.Sakamoto 和 Y.Yamamoto：“与 Si(100) 基板上 CeO_2(110) 层结晶度相关的表面形态分析”J.Vac.Sci

T.Inoue,Y.Yamamoto and M.Satoh: "Low temperature epitaxial growth of CeO_2(110) layers on Si(100) using electron beam assisted evaporation"Thin Solid Films. 343-344. 594-597 (1999)

T.Inoue、Y.Yamamoto 和 M.Satoh：“使用电子束辅助蒸发在 Si(100) 上低温外延生长 CeO_2(110) 层”固体薄膜。

T.Inoue, T.Nakamura, S.Nihei, S.Kamata, N.Sakamoto and Y.Yamamoto: "Surface morphology analysis in correlation with crystallinity of CeO_2(110) layers on Si(100) substrates"J.Vac.Sei.Technol. A 18(4). 1613-1616 (2000)

T.Inoue、T.Nakamura、S.Nihei、S.Kamata、N.Sakamoto 和 Y.Yamamoto：“与 Si(100) 基板上 CeO_2(110) 层结晶度相关的表面形态分析”J.Vac.Sei

Tomoyasu Inoue,Yasuhiro Yamamoto and Masataka Satoh: "Electron-beam-assiseted evaporation of epitaxial CeO_2 thin films on Si substrates"J.Vac.Sci.Technol.A. 19. 275-279 (2001)

Tomoyasu Inoue、Yasuhiro Yamamoto 和 Masataka Satoh：“Si 衬底上外延 CeO_2 薄膜的电子束辅助蒸发”J.Vac.Sci.Technol.A。