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Rapid annealing of hexagonal ferrite hard disk for high density recording media with low noise

低噪声高密度记录介质六方铁氧体硬盘的快速退火

基本信息

批准号：
10555102
负责人：
MORISAKO Akimitsu
金额：
$ 7.81万
依托单位：
Shinshu University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B).
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 2000
项目状态：
已结题

项目摘要

High magnetic anisotropy and vety small grain size are necessary for the future high density magnetic recording. In this study, we have focused both Ba- abd Sr-ferrite supttered thin films for ultra high density recording media.We found that Bi addition is effective to lower the crystallization temperature.This results in the suppress of the grain growth and grain size is in the range from 40 to 80 nm at the substrate temperature of 550 C.The grain size of simple hexagonal ferrite films without any additives was in the range from 100 to 150 nm. We found that the addition of Bi can reduce the grain size down to about half. Another experiment on rapid annealing was also carried out for Bi-Ba-ferrite thin films. The grain size can be reduced to 30 to 40 nm by annealing at 750 C for 30 seconds. Coercivity of rapid annealed Ba-ferrite thin films is around 3.7 kOe. The recording characteristics of Ba-ferrite thin film hard disk was evaluated by using merged type magnetic head. The recording density, D50, is in the range from 210 to 230 kfipi. The highest recording density is about 310 kfipi and this bit length almost corresponds to the grain size. This suggests Ba-ferrite thin film disk has high potential for ultra high density recording, when the grain size is reduced to about 10 nm or smaller. Another approach to reduce the grain size should be necessary for the developing Ba-ferrile thin films with nano-scaled grain size.

高磁各向异性和非常小的晶粒尺寸是未来高密度磁记录所必需的。在本研究中，我们已经把重点放在了巴-阿布-斯-本文研究了用于超高密度记录介质的铁氧体超导薄膜。我们发现，Bi的加入有效地降低了晶化温度，从而抑制了晶粒的生长，在衬底温度为550 ℃时，晶粒尺寸在40 ~ 80 nm之间。不加任何添加剂的简单六角铁氧体薄膜的晶粒尺寸在40 ~ 80 nm之间。从100到150 nm。我们发现Bi的加入可以使晶粒尺寸减小到大约一半。对Bi Ba铁氧体薄膜进行了快速退火实验。通过在750 ℃下退火30秒，可以将晶粒尺寸减小到30至40 nm。快速退火的钡铁氧体薄膜的矫顽力约为3.7 kOe。采用合并式磁头对钡铁氧体薄膜硬盘的记录特性进行了评价。记录密度D50在210至230 kfipi的范围内。最高记录密度约为310 kfipi，该位长度几乎对应于晶粒尺寸。这表明，当晶粒尺寸减小到约10 nm或更小时，Ba铁氧体薄膜盘具有用于超高密度记录的高潜力。另一种减小晶粒尺寸的方法对于开发具有纳米级晶粒尺寸的钡铁氧体薄膜是必要的。