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Development of high-rate sputtering system for Ba-ferrite thin film rigid disk for ultra high density magnetic recording

超高密度磁记录用Ba铁氧体薄膜硬盘高速溅射系统的开发

基本信息

批准号：
06555093
负责人：
MORISAKO Akimitsu
金额：
$ 8.7万
依托单位：
Shinshu University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

项目摘要

In order to develope a new fabrication technique for near future high density magnetic recording media, a facing target sputtering system has been built. In this system, the ferromagnetic thin films can be deposited with high rate even when the thick iron target was used. From our previous research, it was found that the Ba-ferrite thin films can be prepared at high substrate temperature. Although the Ba-ferrite thin films with excellent characteristics for magnetic recording media, it is not suitable for practical mass prodauction. In this study, we proposed a new technique for fabrication of high density recording media with high rate.The Ba-ferrite thin films were deposited at room temperature and succsessively annealed to crystallize. In comparison with the crystallization temperature of Ba-ferrite thin films prepared both a conventional dc magnetron sputtering system and the facing targets sputtering system, it was found that the crystallization temperature of the films prepared by the facing target sputtering system is lower than of the films prepared by the dc magnetron sputtering system.The coercivities of the Ba-ferrite thin films are in the range from 2 to 3kOe and squareness ratio is about 0.8 in perpendicular direction. These vakues are suitable for high density magnetic recording media.The recording density obtained in this research is about 100kbpi for the Ba-ferrite supttered rigid disks by using a MIG type head. This value will be improved by optimizing the preparation conditons such as oxygen partial gas pressure during the deposition and annealing time.From the results of our reseach, it was found that the technique propsed in this project is applicable for practical mass production of recording media.

为了在不久的将来开发一种新的高密度磁记录介质的制备技术，建立了一套面向目标的溅射系统。在该系统中，即使使用较厚的铁靶，也可以高速沉积铁磁性薄膜。我们前期的研究发现，在较高的衬底温度下可以制备出Ba型铁氧体薄膜。尽管Ba型铁氧体薄膜具有优良的磁记录介质特性，但它不适合于实际的大规模生产。在这项研究中，我们提出了一种制备高密度高速率记录介质的新技术，即在室温下沉积Ba铁氧体薄膜，并连续退火晶化。与传统的直流磁控溅射系统和对向靶溅射系统制备的Ba铁氧体薄膜的晶化温度进行了比较，发现对向靶溅射系统制备的薄膜的晶化温度低于直流磁控溅射系统制备的薄膜的晶化温度，薄膜的矫顽力在2~3kOe范围内，垂直方向的正方形比约为0.8。这些磁头适用于高密度磁记录介质。对于使用MIG型磁头的钡铁氧体支撑的硬盘，本研究获得的记录密度约为100kbpi。通过优化制备条件，如沉积过程中的氧分压和退火过程中的氧分压，可以提高这一数值。从我们的研究结果来看，本项目提出的技术适用于实际的大规模生产记录介质。