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Study of chemical reaction and phenomena of heat and mass transfer during CZ-silicon crystal growth

直拉硅晶体生长过程中的化学反应及传热传质现象研究

基本信息

批准号：
11450009
负责人：
HOSHIKAWA Keigo
金额：
$ 9.47万
依托单位：
Faculty of Education, Shinshu University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B).
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450009/
关键词：
CZ-Silicon crystal growth chemical reaction at high temperature phenomenon of heat and mass transfer silica crucible Si melt SiO gas growth interface dislocation-free crystal CZ-Si結晶熱物質移動現象酸素移動現象酸素溶解速度マラニユニー対流蒸発速度係数

项目摘要

Czochralski (CZ) silicon crystal growth technology for production of LSI substrates depends on much technique based on experimental trials and errors at Si maker for a long time. However, it is more necessary to approach and discuss scientifically the CZ-Si crystal growth for corresponding flexibly to more complex operation of crystal production. In the present study, the thermochemical reaction at high temperature and the phenomenorr of heat and mass transfer during CZ-Si crystal growth have been investigated, and we noticed the oxygen transport and the dislocation at growth interface. Typical results are as follows,(1) Concerning the interface of silica glass/Si melt, a new method called drop method is proposed for understanding oxygen transportation process in the CZ-Si crystal growth. Dissolution rate of silica glass in Si melt is precisely measured using the drop method and can be obtained almost one order larger than that obtained from the conventional measurement.(2) SiO vapor pressure concerning CZ-Si crystal growth is measured by an SiO_2 glass/Si melt/SiO gas equilibrium system. It is found that the dependence of the SiO vaper pressure on temperature is good agreement with the calculated results using some thermochemical data.(3) It is found that no dislocations due to both thermal shock and lattice misfit form at a seed/grown crystal interface using a seed with 1〜7x10^<18> atoms/cm^3 of B concentration. So, dislocation-free CZ-Si crystal growth without Dash necking is proposed using the heavily B-doped Si seed.

用于大规模集成电路衬底生产的直拉法硅单晶生长技术长期以来依赖于大量的实验技术。然而，更有必要对直拉硅单晶生长进行科学的探讨和研究，以灵活地适应晶体生产中更为复杂的操作。本文研究了直拉硅单晶生长过程中的高温热化学反应和传热传质现象，注意到氧的输运和生长界面的位错。（1）针对石英玻璃/硅熔体界面，提出了一种新的研究方法--液滴法，用于研究直拉硅单晶生长过程中氧的输运过程。用滴法精确测量了石英玻璃在硅熔体中的溶解速率，其结果比常规测量结果大近一个数量级。(2)用SiO_2玻璃/硅熔体/SiO气体平衡系统测定了直拉硅单晶生长过程中SiO的蒸气压。计算结果表明，SiO蒸气压随温度的变化关系与某些热化学数据的计算结果符合得很好。(3)结果表明，在B浓度为1 × 7 × 10 ^ atoms/cm ^3的籽晶中，在籽晶/生长晶体界面处没有由于热冲击和晶格失配引起的位错形成<18>。因此，提出了采用重掺硼硅籽晶生长无位错直拉硅晶体而不产生Dash颈缩的方法。