Single Crystal Growth and Domain Control of Potassium Niobate Crystals by Vertical Bridgman method

垂直布里奇曼法铌酸钾晶体的单晶生长和域控制

• 批准号: 18360007
• 负责人: HOSHIKAWA Keigo
• 金额: $ 10.97万
• 依托单位: Shinshu University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2006
• 资助国家: 日本
• 起止时间: 2006 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18360007/
• 关键词: Potassium Niobate; Vertical Bridgman method; Piezoelectricity; Polarization process; Top-seeded solution growth; Platinum crucible; ウエハ加工; KN単結晶; LN単結晶; SAWWフィルタ; X線トポグラフ; UWB無線システム; リネージ; 小傾角境界

Potassium niobate (KNbO_3: KN) is known as a great piezoelectric materials which has large piezoelectric constant and electro-mechanical coupling coefficient. Therefore, KN is expected to be one of the future piezoelectric materials instead of lead-containing piezoelectric ceramics, and it has also been attracting attention as the substrate of filter devices with wide band using surface acoustic wave. However, KN is an incongruent-melting material, therefore, it is widely believed that a KN single crystal can be only grown by solution growth that means the top-seeded solution growth (TSSG) method. In our previous study, we showed that KN single crystals 10 mm in diameter could be grown by vertical Bridgman (VB) method. In this study, growth of KN single crystal 1 inch in diameter was demonstrated by VB method and the electric properties of the grown KN crystal was investigated.Powdered K_2CO_3 and Nb_2O_5 were mixed in a ratio of K_2CO_3 : Nb_2O_5 = 52.5 : 47.5 mol%, and the mixture was compressed and was calcined. The resulting columned compounds were used as the raw materials. A z-directional KN single crystal was used as the seed, RN crystals 1 inch in diameter were grown by VB method in air. A platinum crucible was used for the growth, and the growth rate was 0.5 mm/h. After the growth, the crystal was cooled slowly near temperatures of its phase transformation. The crystals were cut into wafers and polished, and the wafers were examined by X-ray topography. After the polarization process, the piezoelectricity of the polarized VB-KN samples was evaluated by using impedance analyzer. As the results, cloudy multi-domain KN crystals were grown by VB method. It was confirmed by X-ray topography that the grown crystals were almost single crystal. After the polarization process, the VB-grown KN single crystal revealed piezoelectricity similar as that grown by TSSG method.

Niobate钾（KNBO_3：KN）被称为一种很棒的压电材料，具有大型压电常数和机电耦合系数。因此，预计KN将是未来的压电材料之一，而不是含铅的压电陶瓷，并且它也吸引了使用表面声波的宽带的滤波器设备的基板。但是，kN是一种不一致的熔融材料，因此，人们普遍认为，只有溶液生长才能生长kN单晶，这意味着最高种子的溶液生长（TSSG）方法。在我们先前的研究中，我们表明，直径10毫米的kN单晶可以通过垂直Bridgman（VB）方法生长。在这项研究中，通过VB方法证明了kN单晶直径1英寸的生长，并研究了种植的kN晶体的电特性。富含K_2CO_3和NB_2O_5的含量为K_2CO_3：NB_2O_3：NB_2O_5 = 52.5：47.5：47.5 mol％，并压缩了混合物。由此产生的柱状化合物用作原材料。 z方向kN单晶用作种子，通过空气中的VB方法生长直径为1英寸的RN晶体。铂坩埚用于生长，生长速率为0.5 mm/h。生长后，将晶体在其相变的温度附近缓慢冷却。将晶体切成晶片并抛光，并通过X射线形状检查晶圆。在极化过程之后，使用阻抗分析仪评估了极化VB-KN样品的压电性。结果，通过VB方法生长多云的多域kN晶体。 X射线地形证实，生长的晶体几乎是单晶体。在极化过程之后，VB生长的kN单晶显示了与TSSG方法生长的压电性相似。

项目成果

Langataite (La3Ta0.5Ga5.5O14) crystal growth by the vertical Bridgman (VB) method

采用垂直布里奇曼 (VB) 法生长硅锰矿 (La3Ta0.5Ga5.5O14) 晶体

• 发表时间: 2008
• 作者: T. Taishi;N. Bamba;K. Hoshikawa;I. Yonenaga
• 通讯作者: I. Yonenaga

The Characteristics of the La_3Ga_5SiO_<14> Single Crystals Grown by Vertical Bridgman Method in Ar Atomosphere

Ar气氛下垂直布里奇曼法生长La_3Ga_5SiO_<14>单晶的特性

• 发表时间: 2006
• 期刊: Materials Science Forum 510-511
• 作者: N. Banba;K. Kato;T. Taishi;T. Hayashi. K. Hoshikawa;T. Fukami
• 通讯作者: T. Fukami

The Characteristics of the La_3Ga_5SiO_<14> Single Crystal Grown by Vertical Bridgman Method in Ar Atomosphere

Ar气氛下垂直布里奇曼法生长La_3Ga_5SiO_<14>单晶的特性

• 发表时间: 2006
• 期刊: Materials Science Forum 510-511
• 作者: N. Takimoto;他5名;N. Banba
• 通讯作者: N. Banba

Oxygen defects in langasite(La_3Ga_5SiO_14)single crystal grown by vertical Bridgman method

垂直布里奇曼法生长硅酸锰矿(La_3Ga_5SiO_14)单晶中的氧缺陷

• 发表时间: 2007
• 作者: D. Guo;K. Sakamoto;K. Miki;S. Ikeda;and K. Saiki;皆川亨介;T. Taishi
• 通讯作者: T. Taishi

Oxygen defects in langasite (La_3Ga_5SiO_<14>) single crystal grown by vertical Bridgman method(Mp-14)

垂直布里奇曼法生长的硅酸锰矿（La_3Ga_5SiO_<14>）单晶中的氧缺陷（Mp-14）

• 发表时间: 2007
• 作者: T. Taishi;T. Hayashi;N. Bamba;Y. Ohno;I. Yonenaga;K. Hoshikawa
• 通讯作者: K. Hoshikawa