Development of Technique of Creation of Small-Scale Crack and its Application to Micro Strength Test

小尺度裂纹产生技术的发展及其在微观强度试验中的应用

• 批准号: 11450042
• 负责人: SAKAI Shinsuke
• 金额: $ 9.73万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450042/
• 关键词: Fracture Mechanics; Crack; Silicone; Etching; Brittle Fracture; Weibull Plot; ミクロき裂; 電子顕微鏡; イオンシャワーエッチング; 材料強度

In recent years, the phenomenon treated by the mechanical engineering has reached the micro domain. In the field of fracture mechanics, the detailed analysis of the small-scale crack and the defect conventionally dealt with as if it was fully small has increased importance. Moreover, if progress of remarkable semiconductor process technology is used, it is also possible creating such a small-scale defect with highly controlled shape and so it is considered to become possible to make crack geometry, not passively but actively. The purpose of this research is the establishment of experimental method of fracture mechanics using the small-scale crack with high accuracy. Specifically, we investigated the manufacturing method of small-scale cracks using the semiconductor process technology together with the measurement technique of the evaluation of degradation resulting from the introduced small-scale crack. Examining various methods for creation of small-scale cracks on the single crystal … More silicone, it was shown that the combination of ICP etching and the Ta as the mask material shows the best performance. It was enabled to create a small-scale crack with 20μμ width and 45μμ depth. Three points bending test under small load was conducted using the manufactured specimen and the bending strength was investigated. The results showed that the strength decreases by about 230MPa by introduction of small-scale cracks. The stress analysis was conducted using finite element method and the stress concentration factor was shown to be about 5 and thus the maximum stress at the bottom of the created slit is supposed to be about 902MPa which exceeds the bending strength *00MPa for silicon specimen without slit. The distribution of the strength was plotted on the Weibull probability paper and the data were plotted on the straight line which shows the brittle property of the material as was expected. Scale effect was performed using Weibull parameters evaluated from the probability paper for the specimen without a slit. It was expected that the strength of specimen with slit will decrease since the area of the bottom part of the slit is smaller than the cut area of the specimen without slit. However, the decrease of strength could not be explained only by the scale effect and so it is supposed that the some effects that is specific to the micro-structure exist. These are left unsolved. Less

近年来，机械工程所处理的现象已进入微观领域。在断裂力学领域中，对小尺度裂纹和缺陷的详细分析已经变得越来越重要。此外，如果使用显著的半导体工艺技术的进步，也可以产生具有高度受控形状的这种小规模缺陷，因此认为可以不是被动地而是主动地形成裂纹几何形状。本研究的目的是建立高精度的小尺度裂纹断裂力学实验方法。具体而言，我们研究了使用半导体工艺技术的小规模裂纹的制造方法，以及由引入的小规模裂纹引起的劣化的评估的测量技术。研究在单晶上产生小尺度裂纹的各种方法 ...更多信息 在硅树脂中，显示出ICP蚀刻和Ta作为掩模材料的组合显示出最佳性能。使其能够产生宽度为20μμ、深度为45μμ的小尺度裂纹。利用所制备的试件进行了小载荷下的三点弯曲试验，并研究了弯曲强度。结果表明，小尺度裂纹的引入使强度降低约230MPa。使用有限元法进行应力分析，应力集中系数显示为约5，因此在所产生的狭缝底部处的最大应力假定为约902MPa，其超过无狭缝的硅样品的弯曲强度 *00MPa。强度分布绘制在威布尔概率纸上，数据绘制在直线上，该直线显示了预期的材料脆性。使用从概率纸评估的Weibull参数对无狭缝样本进行尺度效应。由于狭缝底部的面积小于无狭缝样本的切割面积，因此预期有狭缝样本的强度将降低。然而，强度的降低不能仅仅用尺度效应来解释，因此可以认为存在一些特定于微观结构的效应。这些都没有解决。少