Turn on control of high power semiconductor devices by laser probing technique

通过激光探测技术开启高功率半导体器件的控制

• 批准号: 11450108
• 负责人: YASUOKA Koichi
• 金额: $ 9.66万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450108/
• 关键词: power device; infrared-laser probe; fast turn-on; carrier distribution; PiN diode; device simulator; レーザプローブ

A Measuring system has been developed for measuring the excess carrier density in high-power devices by using a laser-probing technique. This system enabled us to obtain high-speed and precise special information about the carrier distribution during the turn-on stage and also to compare the experimental data with the simulation results. Following results are obtained.First, the required performance of the system was estimated for measuring the semiconductor device of several hundreds-μm thicknesses. By ray-tracing of the probe beam of l.55μm wavelength and using of fast response equipments, the time and special resolution of this system reached to 5.1ns and 35μm, respectively.In the second, the photo-excited carrier density formed in a silicon wafer irradiated by a YAG laser was shown to be 10^<18>cm^<-3> within 50ns. The PiN diode excited by pulsed voltage showed the concave shape of carrier density. These data were supported by the calculation results of 2D simulation code.In the third, the research of photo-triggered switch was advanced with the on state in irradiating PiN diode of the reversely biased condition with a pulse YAG laser light. The fast switching of 50ns was obtained at the reverse voltage of 35V and 6.0mJ output of YAG laser. The uniformly formed excess carrier of about 10^<18>cm^<-3> was observed.These obtained results of transient carrier distributions within a PiN diode that was excited optically or electrically showed the effectiveness of this evaluating and controlling system for high power devices in pulsed power operations.

利用激光探测技术，研制了一种测量大功率器件中多余载流子密度的测量系统。该系统使我们能够快速准确地获得导通阶段载流子分布的特殊信息，并将实验数据与仿真结果进行比较。得到如下结果：首先，对测量几百μm厚度的半导体器件所需的性能进行了估计。通过对波长为1.55 μm的探测光束进行射线追迹，并采用快速响应设备，该系统的时间和专用分辨率分别达到5.1ns和35μm。在第二种实验中，YAG激光照射硅片形成的光激发载流子密度在50ns内为10^<18>cm^< 3>。在脉冲电压激励下，PiN二极管的载流子密度呈凹形。这些数据得到了二维仿真代码计算结果的支持。第三，利用脉冲YAG激光在反向偏置条件下照射PiN二极管的导通状态进行了光触发开关的研究。在反向电压35V，输出6.0mJ的YAG激光器下，获得了50ns的快速开关。观察到均匀形成的多余载流子约为10^<18>cm^<-3>。这些在光电激励下的PiN二极管内瞬态载流子分布的结果表明了该系统在脉冲功率工作中对高功率器件的评估和控制的有效性。

项目成果

前田直人: "赤外レーザによるパワーデバイス内のキャリア測定"電気学会プラズマ研究会資料. PST-00-36. 1-5 (2000)

Naoto Maeda：“使用红外激光测量功率器件中的载流子”IEEJ 等离子体研究组材料。 ​​1-5 (2000)。

Koichi Yasuoka: "Measurement of transient carrier density in power devices by laser probing technique"Proceedings of National Institute for Fusion Science. (2001)

Koichi Yasuoka：“通过激光探测技术测量功率器件中的瞬态载流子密度”国家核聚变科学研究所论文集。

Naoto Maeda: "Measurement of carrier density in semiconductor devices by far infrared laser-probe"Proceedings of 2000 Annual Conference of Fundamentals and Materials Society IEE Japan. 7-3. 381 (2000)

Naoto Maeda：“通过远红外激光探针测量半导体器件中的载流子密度”日本基础材料学会 2000 年年会论文集。

Shozo Ishii: "Pulsed Power Application assisted by Power Semiconductor Devices"The 13th International Symposium on Power Semiconductor Devices ISPSD'1.

Shozo Ishii：“功率半导体器件辅助的脉冲功率应用”第十三届功率半导体器件国际研讨会 ISPSD1。

石井彰三: "Pulsed Power Application assisted by Power Semiconductor Devices"The 13^<th> International Symposium on Power Semiconductor Devices. ISPSD'1. (2001)

Shozo Ishii：“功率半导体器件辅助的脉冲功率应用”第 13 届 ISPSD1 国际研讨会。