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Turn on control of high power semiconductor devices by laser probing technique

通过激光探测技术开启高功率半导体器件的控制

基本信息

批准号：
11450108
负责人：
YASUOKA Koichi
金额：
$ 9.66万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B).
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450108/
关键词：
power device infrared-laser probe fast turn-on carrier distribution PiN diode device simulator レーザプローブ

项目摘要

A Measuring system has been developed for measuring the excess carrier density in high-power devices by using a laser-probing technique. This system enabled us to obtain high-speed and precise special information about the carrier distribution during the turn-on stage and also to compare the experimental data with the simulation results. Following results are obtained.First, the required performance of the system was estimated for measuring the semiconductor device of several hundreds-μm thicknesses. By ray-tracing of the probe beam of l.55μm wavelength and using of fast response equipments, the time and special resolution of this system reached to 5.1ns and 35μm, respectively.In the second, the photo-excited carrier density formed in a silicon wafer irradiated by a YAG laser was shown to be 10^<18>cm^<-3> within 50ns. The PiN diode excited by pulsed voltage showed the concave shape of carrier density. These data were supported by the calculation results of 2D simulation code.In the third, the research of photo-triggered switch was advanced with the on state in irradiating PiN diode of the reversely biased condition with a pulse YAG laser light. The fast switching of 50ns was obtained at the reverse voltage of 35V and 6.0mJ output of YAG laser. The uniformly formed excess carrier of about 10^<18>cm^<-3> was observed.These obtained results of transient carrier distributions within a PiN diode that was excited optically or electrically showed the effectiveness of this evaluating and controlling system for high power devices in pulsed power operations.

研制了一种利用激光探测技术测量高功率器件中过剩载流子密度的测量系统。该系统能够高速、准确地获取开机过程中载流子分布的特殊信息，并将实验数据与仿真结果进行比较。首先，对测量几百μm厚度的半导体器件所需的系统性能进行了估算。通过对波长为1.55μm的探测光束的光线跟踪和快速响应装置的使用，该系统的时间和空间分辨率分别达到了5.1 ns和35μm。在脉冲电压激励下，PIN二极管呈现出载流子密度凹陷的形状。这些数据得到了二维模拟程序的计算结果的支持。第三，研究了脉冲YAG激光照射PIN二极管反向偏置条件下的光触发开关的导通状态。在反向电压为35V，输出功率为6.0mJ的条件下，获得了50 ns的快速开关。观察到均匀分布的过剩载流子约为10 cm~(-3)cm~(-3)，对PIN二极管在光或电激励下的瞬时载流子分布进行了测量，证明了该系统对大功率脉冲功率器件的评价和控制的有效性。