Testing system for seeking the ultimate performance of high power and ultra fast semiconcucter devices.

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A testing system has been developed for evaluating the ultimate performance of high-power power devices used in pulsed power systems. In a conventional power electronics circuit, the turn-off characteristic of power devise is usually much important than the turn-on characteristic of primary importance in the pulsed power systems. The turn-on performances such as voltage falling time, turn-on delay time, di/dt, switching power loss, were quantitatively evaluated using both the testing circuit and 2 dimensional device simulator. The ultimate turn-on characteristics were measured using testing circuit with extremely low residual inductance that was reduced to the required value. The variable storage capacitance enabled non-destructive testing of semiconductor devices. The maximum di/dt value of a SI thyristor was estimated to be 1.1x10^<11> A/s. The primary factor of turn-on characteristics was investigated from the point of view of carrier flow and external circuit conditions using developed practical 2D model of a SI thyristor. The newly developed gate driving circuit reduced the turn-on time to 35ns. The repetitive operation was also possible using these gate driver.