Testing system for seeking the ultimate performance of high power and ultra fast semiconcucter devices.

寻求高功率、超高速半导体器件终极性能的测试系统。

• 批准号: 09355009
• 负责人: YASUOKA Koichi
• 金额: $ 16.83万
• 依托单位: TOKYO INSTITUTE OF TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09355009/
• 关键词: power device; semiconductor device; fast turn on; fast driving method; carrier characteristics; pulsed power; 高速大電流; 外部回路; ゲート駆動回路

A testing system has been developed for evaluating the ultimate performance of high-power power devices used in pulsed power systems. In a conventional power electronics circuit, the turn-off characteristic of power devise is usually much important than the turn-on characteristic of primary importance in the pulsed power systems. The turn-on performances such as voltage falling time, turn-on delay time, di/dt, switching power loss, were quantitatively evaluated using both the testing circuit and 2 dimensional device simulator. The ultimate turn-on characteristics were measured using testing circuit with extremely low residual inductance that was reduced to the required value. The variable storage capacitance enabled non-destructive testing of semiconductor devices. The maximum di/dt value of a SI thyristor was estimated to be 1.1x10^<11> A/s. The primary factor of turn-on characteristics was investigated from the point of view of carrier flow and external circuit conditions using developed practical 2D model of a SI thyristor. The newly developed gate driving circuit reduced the turn-on time to 35ns. The repetitive operation was also possible using these gate driver.

研制了一种用于脉冲功率系统中大功率功率器件极限性能评估的测试系统。在传统的电力电子电路中，功率器件的关断特性通常比脉冲功率系统中最重要的导通特性重要得多。利用测试电路和二维器件模拟器对器件的降压时间、导通延迟时间、di/dt、开关功率损耗等导通性能进行了定量评价。最终导通特性是用极低的剩余电感测试电路测量的，剩余电感被减小到所需值。可变存储电容使半导体器件的无损检测成为可能。SI晶闸管的最大di/dt值估计为1.1x10^<11> a /s。利用开发的硅晶闸管二维实用模型，从载流子流和外部电路条件的角度研究了影响硅晶闸管导通特性的主要因素。新开发的栅极驱动电路将导通时间缩短至35ns。使用这些栅极驱动器也可以实现重复操作。

项目成果

K.YASUOKA: "Testing System for Measuring High di/dt Response of Power Devices" 電気学会プラズマ研究会. EP-98-78. 75-80 (1998)

K.YASUOKA：“测量功率器件高 di/dt 响应的测试系统”日本电气工程师协会等离子体研究组 EP-98-78 (1998)。

Shinji IBUKA: "SI-thyristor as a high power switching device for fast high voltage pulse generators" 11th IEEE Int.Pulsed Power Conf.Vol.2. 957-958 (1998)

Shinji IBUKA：“SI-晶闸管作为快速高压脉冲发生器的高功率开关器件”第 11 届 IEEE Int.Pulsed Power Conf.Vol.2。

神宮司和孝: "パルス大電力放電励起に用いる半導体パワーデバイスの特性評価" 電気学会プラズマ研究会. EP-98-55. 43-47 (1998)

Kazutaka Jingu：“用于脉冲高功率放电激励的半导体功率器件的特性评估”日本电气工程师学会等离子体研究组EP-98-55（1998）。

石井彰三: "大電力パルス発生技術とそれに向けたパワーデバイスの動向" 電気学会電子デバイス・半導体電力変換合同研究会. EDD-98-87. 1-6 (1998)

Shozo Ishii：“高功率脉冲发生技术及其功率器件的发展趋势”，IEEJ 电子器件和半导体功率转换联合研究组 EDD-98-87 (1998)。

石井彰三: "大電力パルス発生技術とそれに向けたパワーデバイスの動向" 電気学会(技術報告), (1998)

Shozo Ishii：“高功率脉冲发生技术和功率器件的趋势”日本电气工程师学会（技术报告），（1998）