Preparation of Insulating Aluminum Nitride Film by Enhanced Shielded Vacuum

强化屏蔽真空制备绝缘氮化铝薄膜

• 批准号: 11450122
• 负责人: SAKAKIBARA Takeki
• 金额: $ 8.26万
• 依托单位: Toyohashi University of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450122/
• 关键词: aluminum nitride film; vacuum arc deposition; enhanced shielded method; droplet-free; superconductor shield; magnetically filtered arc; film properties; 窒化アルミニウム膜; 光学的特性; 機械的特性; 結晶配向; イオンエネルギー分析

In order to fabricate the AlN film, which exhibits high electrical insulation property with high thermal conduction and is available for of electric power device, which is available for electric power devices, new reactive vacuum arc deposition system was developed. In the shielded method (S-CAD: shielded cathodic arc deposition), we found that the transparent AlN films with different crystalline orientations could be prepared by using different substrate bias. The S-CAD was further available to prepare various droplet-free films of other nitride and oxides (AlO_2, TiN, TiO_2, CrN, ZnO, etc.). However, the S-CAD has a problem that the deposition rate decreases by 1/3 to 1/5. Then, in order to increase the deposition rate, the enhanced shielded method (ES-CAD) in which the ions behind the shield were conducted and focused to the substrate by external magnetic field, was designed and the system apparatus was fabricated. After optimizing the magnetic filed configuration and magnetic flux density, the deposition rate in ES-CAD was more than 5 times as high as that in S-CAD, and was even faster than that in the non-shielded conventional method.The improved ES-CAD (ES-CAD) in which the superconductor shield employed was then build, in order to obtain much faster deposition rate. The ions emitted from the cathode were effectively transported to the substrate by the detoured magnetic filed due to meissner effect of the superconductor. ES-CAD had higher deposition rate than ES-CAD. Furthermore, linear and torus type magnetically filtered arc deposition (FAD) systems having droplet filtering duct, were developed. As a result, it was found that the liner-FAD was not able to filter the droplets, although the torus-FAD was able to filter the droplets sufficiently.

为了制备具有高电绝缘性和高导热性的可用于电力器件的氮化铝薄膜，研制了一种新的反应真空电弧沉积系统。在屏蔽法（S-CAD：屏蔽阴极电弧沉积）中，我们发现使用不同的衬底偏压可以制备出不同结晶取向的透明AlN薄膜。S-CAD还可用于制备其他氮化物和氧化物（AlO_2、TiN、TiO_2、CrN、ZnO等）的无液滴薄膜。但S-CAD存在沉积速率降低1/3 ~ 1/5的问题。然后，为了提高沉积速率，设计了增强屏蔽法（ES-CAD），通过外磁场将屏蔽后的离子传导并聚焦到基片上，并制作了系统装置。优化磁场构型和磁通密度后，ES-CAD的沉积速率是S-CAD的5倍以上，甚至比无屏蔽的常规方法更快。为了获得更快的沉积速率，构建了采用超导体屏蔽的改进ES-CAD （ES-CAD）。由于超导体的迈斯纳效应，阴极发射出的离子被绕行磁场有效地输送到衬底上。ES-CAD的沉积速率高于ES-CAD。此外，还开发了具有液滴过滤导管的线性和环面型磁滤电弧沉积系统。结果发现，尽管环状fad能够充分过滤液滴，但内衬fad无法过滤液滴。

项目成果

H.Takikawa: "Properties of titanium oxide film prepared by reactive cathodic vacuum arc deposition"Thin Solid Films. 348. 145-151 (1999)

H.Takikawa：“反应性阴极真空电弧沉积制备的氧化钛薄膜的特性”固体薄膜。

H.Takikawa: "Synthesis of a-axis-oriented AlN film by a shielded reactive vacuum arc deposition method"Surface and Coatings Technology. 120/121. 383-387 (1999)

H.Takikawa：“采用屏蔽反应真空电弧沉积法合成a轴取向AlN薄膜”表面与涂层技术。

M. Ikeda, K. Izumi, R. Miyano, H. Takikawa, T.Sakakibara: "Magnetic transportation of vacuum arc plasma and droplet filtering"Journal of Applied Plasma Science. Vol. 8. 80-87 (2000)

M. Ikeda、K. Izumi、R. Miyano、H. Takikawa、T.Sakakibara：“真空电弧等离子体的磁传输和液滴过滤”应用等离子体科学杂志。

H. Takikawa, K. Kimura, R. Miyano, T. Sakakibara: "Cathodic arc deposition with activated anode (CADAA) for preparation of in situ doped thin solid films"Vacuum. (in press). (2002)

H. Takikawa、K. Kimura、R. Miyano、T. Sakakibara：“使用激活阳极的阴极电弧沉积 (CADAA) 用于制备原位掺杂固体薄膜”真空。

R.Miyano: "Influence of gap length and pressure on medium vacuum arc with Ti cathode in various ambient gases"Thin solid films. (印刷中).

R.Miyano：“间隙长度和压力对各种环境气体中钛阴极的中真空电弧的影响”固体薄膜（正在出版）。