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Development of vacuum arc deposition system for fabricating AIN film available to electrical insulation film of power devices with high thermal conduction

开发用于高导热功率器件电绝缘膜的AlN薄膜真空电弧沉积系统

基本信息

批准号：
08555075
负责人：
SAKAKIBARA Tateki
金额：
$ 8.45万
依托单位：
Toyohashi University of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1998
项目状态：
已结题

项目摘要

In order to fabricate the AlN film, which exhibits high electrical insulation property with high thermal conduction and is available for of electric .power device, which is available for electric power devices, new reactive vacuum arc deposition system was developed, The system employed the shielded arc technology to filter the droplets, which has been fatal issue in vacuum arc deposition method. The following results were obtained through this research.1. The films prepared by the shielded system were almost droplet-free, transparent in visual, and adhered well to the substrate, whereas the films prepared by the conventional system were non-transparent due to many droplets and easily peeled off.2. Refractive index of the films prepared by the shielded system was 2.0 and extinction coefficient was less than 10^<-2> in visual and infrared region, showing super transparency.3. The films deposited by the shielded system were much harder than boro-silicated galss.4. Deposition rate of the shielded system was 1.5 time as high as that of Magnetron sputter.5. The films prepared by the conventional system exhibits c-axis orientation. However, the films prepared by the shielded system shows a-axis orientation, which indicates these films could have higher resistance.From above results, we concluded that the shielded reactive vacuum arc deposition system were available for fabricating AlN films with excellent optical and mechanical properties. Further investigations are required at the viewpoints of electrical and thermal properties.

为了制备出具有高绝缘性和高导热性的AlN薄膜，并使其适用于电力电子器件，研制了一种新型的反应真空电弧沉积系统。通过本研究取得了以下成果.屏蔽系统制备的薄膜几乎无液滴，外观透明，与基材附着良好，而常规系统制备的薄膜由于液滴较多而不透明，容易剥离.采用该屏蔽系统制备的薄膜在可见光和红外区的折射率为2.0，消光系数小于10^<-2>，显示出超强的光学性能.通过屏蔽系统沉积的薄膜比硼硅化玻璃硬得多。屏蔽系统的沉积速率是磁控溅射系统的1.5倍.用常规系统制备的薄膜具有c轴取向。结果表明，屏蔽式反应真空电弧沉积系统制备的AlN薄膜具有良好的光学和力学性能，具有较高的电阻率。在电学和热学性能方面还需要进一步的研究。