Development of vacuum arc deposition system for fabricating AIN film available to electrical insulation film of power devices with high thermal conduction
Development of vacuum arc deposition system for fabricating AIN film available to electrical insulation film of power devices with high thermal conduction
批准号:
08555075
负责人:
SAKAKIBARA Tateki
金额:
$8.45万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1998
中文摘要
为了制备高绝缘性、高导热、可用于电力设备的AlN薄膜,开发了一种新型的反应真空电弧沉积系统,该系统采用了屏蔽弧技术对熔滴进行过滤,这是真空电弧沉积方法中的一个致命问题。通过本研究取得了以下研究成果:1.屏蔽体系制备的薄膜几乎没有液滴,在视觉上透明,与衬底的附着力良好,而传统体系制备的薄膜由于液滴多而不透明,容易剥落。该屏蔽系统制备的薄膜折射率为2.0,在可见光和红外区的消光系数均小于10^~(-2)~(-2),表现出超透明性。屏蔽系统沉积的薄膜比硼硅玻璃沉积的薄膜要硬得多。屏蔽系统的沉积速率是磁控溅射的1.5倍。由传统系统制备的薄膜显示出c轴取向。结果表明,屏蔽系统制备的AlN薄膜具有较高的电阻,可用于制备具有优良光学性能和机械性能的AlN薄膜。在电学和热学性质方面还需要进一步的研究。
英文摘要
In order to fabricate the AlN film, which exhibits high electrical insulation property with high thermal conduction and is available for of electric .power device, which is available for electric power devices, new reactive vacuum arc deposition system was developed, The system employed the shielded arc technology to filter the droplets, which has been fatal issue in vacuum arc deposition method. The following results were obtained through this research.1. The films prepared by the shielded system were almost droplet-free, transparent in visual, and adhered well to the substrate, whereas the films prepared by the conventional system were non-transparent due to many droplets and easily peeled off.2. Refractive index of the films prepared by the shielded system was 2.0 and extinction coefficient was less than 10^<-2> in visual and infrared region, showing super transparency.3. The films deposited by the shielded system were much harder than boro-silicated galss.4. Deposition rate of the shielded system was 1.5 time as high as that of Magnetron sputter.5. The films prepared by the conventional system exhibits c-axis orientation. However, the films prepared by the shielded system shows a-axis orientation, which indicates these films could have higher resistance.From above results, we concluded that the shielded reactive vacuum arc deposition system were available for fabricating AlN films with excellent optical and mechanical properties. Further investigations are required at the viewpoints of electrical and thermal properties.
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滝川浩史: "真空アークPVD法によるTiO_2膜の生成" プラズマ応用科学研究会研究講演会プロシ-ディング. 6. 47-50 (1997)
泷川浩:《真空电弧PVD法生成TiO_2薄膜》等离子应用科学研究组研究讲座论文集。 6. 47-50 (1997)
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作者:
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通讯作者:
T.Sasaoka, H.Matsuo, H.Takikawa, T.Sakakibara: "Characteristics of TiO_2 film synthesized by vacuum arc deposition method" 3^<rd> Asia-Pacific Conference on Plasma Science & Technology. 1. 523-528 (1996)
T.Sasaoka、H.Matsuo、H.Takikawa、T.Sakakibara:“真空电弧沉积法合成的TiO_2薄膜的特性”第三届亚太等离子体科学会议
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通讯作者:
滝川浩史: "反応性真空アーク蒸着法によるAlN膜の生成" プラズマ応用と複合機能材料. (発表予定). (1999)
Hiroshi Takikawa:“通过反应真空电弧沉积生成 AlN 薄膜”等离子应用和复合功能材料(演示文稿预定)。
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H.Takikawa, K.Manabe, T.Sakakibara: "Mass and ion energy analysis of vacuum are for TiN film deposition" 12^<th> International Conference on Gas Discharges and its Application. 1. 330-333 (1997)
H.Takikawa、K.Manabe、T.Sakakibara:“真空质量和离子能量分析用于 TiN 薄膜沉积”第 12 届气体放电及其应用国际会议。
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通讯作者:
H.Takikawa, K.Shinsako, T.Sakakibara: "TiN/Ti film formation by vacuum arc deposition with shield plate" Thin Solid Films. 316. 73-78 (1998)
H.Takikawa、K.Shinsako、T.Sakakibara:“利用屏蔽板真空电弧沉积形成 TiN/Ti 薄膜”固体薄膜。
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共 34 条
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负责人:SAKAKIBARA Tateki
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