Interface Control of Nanoporous/Organic Low-k Dielectrics and Metal Electrode

纳米多孔/有机低k电介质与金属电极的界面控制

• 批准号: 11450126
• 负责人: KIKKAWA Takamaro
• 金额: $ 9.54万
• 依托单位: HIROSHIMA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450126/
• 关键词: Cu Ion; Porous MSQ; methylpolysilazane; methylsilsesquioxane; Low-k; ion-drift velocity; capacitor; Pool e-Frenkel current; ポーラス; 層間絶縁膜; 集積回路; シリコン酸化膜; 銅; 配線; メチル; イオンドリフト; 有機膜; 多層配線; 銅配線; 金属電極; 拡散速度; ULSI; ドリフト

The purpose of this research is to investigate the interface reaction between porous low-k interlayer dielectric films derived from organic and inorganic precursors. As a consequence, a new interlayer dielectric film which can suppress Cu ion drift is formed. In order to study the mechanism of Cu ion drift in low-k dielectric films, capacitors with Cu electrodes were fabricated on low-k dielectric films and bias-temperature stress tests were carried out so that the flat band voltage shifts of the capacitors could be measured as ionic charges drifted under the electric fields.Two kinds of precursors were prepared. One was a normal methylpolysilazane (Si_x(NH)_y CH_3) and the other was a porous methylpolysilazane in which a porogen was incorporated, where Si-NH bonds turned to Si-O-Si bonds, while Si-CH_3 bonds stayed constant. A porogen was remained in the film after the pre-bake and H_2O absorption steps and vanished after 400℃ cure step due to evaporation, resulting in the formation o … More f porous rnethylsilsesquioxane film.Capacitance-Voltage characteristics of the normal and porous methylsilsesquioxane/SiO_2-substrate capacitors with Cu electrodes were measured before and after 200℃ and 0.1 MV/cm bias-temperature stress for 2 hours. The dielectric constants of the normal and porous rnethylsilsesquioxane films were 2.7 and 2.2, respectively. Flatvband voltage shifts after bias temperature stresses for the normal and porous methylsilsesquioxane/SiO_2/Si capacitors with Cu electrodes were 1.183 and 0.204 V, respectively. It is found that the less negative flatband voltage shift was observed for the porous methylsilsesquioxane film than for the normal film.Results from Arrehnius plots of Cu ion drift velocity for porous and normal films indicated that Cu ion drift velocity in the porous film was lower than that in the normal film and the activation energies of Cu ion drift velocity were in the range of 1.0-1.1ev.lt was found that porous methylsilsesquioxane (MSQ) derived from methylpolysilazane (MSZ) showed inprovement of Cu ion drift suppression by a order of magnitude. Furthermore, Cu ion drift caused defects in porous MSQ so that Poole-Frenkel leakage current increased, resulting in decrease of dielectric breakdown life time. Less

本研究旨在探讨由有机前驱物与无机前驱物所形成之多孔低介电常数层间介电薄膜间之界面反应。结果，形成了能够抑制Cu离子漂移的新的层间介电膜。为了研究Cu离子在低k介质膜中漂移的机理，在低k介质膜上制备了Cu电极电容器，并进行了偏压-温度应力测试，测量了在电场作用下离子电荷漂移时电容器的平带电压漂移。一种是普通的甲基聚硅氮烷（Si_x（NH）_yCH_3），另一种是引入致孔剂的多孔甲基聚硅氮烷，其中Si-NH键转变为Si-O-Si键，而Si-CH_3键保持不变。在预烘和吸H_2O步骤后，致孔剂残留在薄膜中，400℃固化步骤后，致孔剂蒸发消失，导致薄膜中形成多孔结构。 ...更多信息 测量了以Cu为电极的常规和多孔甲基硅倍半氧烷/SiO_2电容器在200℃和0.1MV/cm偏压温度应力作用2 h前后的电容-电压特性。正常和多孔甲基倍半硅氧烷膜的介电常数分别为2.7和2.2。采用Cu电极的常规和多孔甲基倍半硅氧烷/SiO_2/Si电容器在偏压温度应力作用下的平带电压漂移分别为1.183和0.204 V。结果表明，多孔硅倍半氧烷膜的平带电压负移小于普通膜，多孔硅倍半氧烷膜和普通膜的铜离子漂移速度的Arrhenius图表明，多孔硅倍半氧烷膜中的铜离子漂移速度低于普通膜，铜离子漂移速度的激活能在www.example.com范围1.0-1.1ev.lt。由甲基聚硅氮烷（MSZ）衍生的化合物对Cu离子漂移的抑制作用提高了一个数量级。此外，Cu离子漂移导致多孔MSQ中的缺陷，从而使Poole-Frenkel漏电流增加，导致介电击穿寿命降低。少

项目成果

T.Kikkawa: "Current and Future Low-k Dielectrics for Cu Interconnect"Technical Digest of International Eelectron Devices Meeting (IEEE, New York, 2000). 253-256 (2000)

T.Kikkawa：“铜互连的当前和未来低 k 电介质”国际电子器件会议技术文摘（IEEE，纽约，2000 年）。

T. Kikkawa: "Copper drift in porous methylsilsesquiazane low-k dielectric films"Proc. 30th European Solid-State Devices Research Conference (Ireland's Information and Communication Technologies research Centre, Cork, Ireland, Sept. 11-13). 208-211 (2000)

T. Kikkawa：“多孔甲基硅倍半氮烷低 k 介电薄膜中的铜漂移”Proc。

S. Mukaigawa: "Copper Ion Drift in Porous Methylsilsesquiazane Dielectric Films"Extended Abstracts of SSDM, (Japan Society of Applied Phys., Tokyo). 34-35 (2000)

S. Mukaikawa：“多孔甲基硅倍半氮烷介电薄膜中的铜离子漂移”SSDM 的扩展摘要，（日本应用物理学会，东京）。

T. Aoki,: "Porous silicon oxynitride films derived from polysilazane as a novel low-dielectric constant material"Materials Research Society Symposium Proceedings. 565. 41-46 (1999)

T. Aoki，：“作为新型低介电常数材料的聚硅氮烷衍生的多孔氮氧化硅薄膜”材料研究学会研讨会论文集。

吉川公麿: "「多層配線技術とスケーリング」"電子情報通信学会論文誌C(電子情報通信学会). Vol.J83-C No.2. 105-117 (2000)

Kimimaro Yoshikawa：“多层布线技术和缩放”IEICE Transactions C (IEICE) Vol.J83-C No.2 (2000)。