Interface Control of Nanoporous/Organic Low-k Dielectrics and Metal Electrode

纳米多孔/有机低k电介质与金属电极的界面控制

• 批准号: 11450126
• 负责人: KIKKAWA Takamaro
• 金额: $ 9.54万
• 依托单位: HIROSHIMA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450126/
• 关键词: Cu Ion; Porous MSQ; methylpolysilazane; methylsilsesquioxane; Low-k; ion-drift velocity; capacitor; Pool e-Frenkel current; ポーラス; 層間絶縁膜; 集積回路; シリコン酸化膜; 銅; 配線; メチル; イオンドリフト; 有機膜; 多層配線; 銅配線; 金属電極; 拡散速度; ULSI; ドリフト

The purpose of this research is to investigate the interface reaction between porous low-k interlayer dielectric films derived from organic and inorganic precursors. As a consequence, a new interlayer dielectric film which can suppress Cu ion drift is formed. In order to study the mechanism of Cu ion drift in low-k dielectric films, capacitors with Cu electrodes were fabricated on low-k dielectric films and bias-temperature stress tests were carried out so that the flat band voltage shifts of the capacitors could be measured as ionic charges drifted under the electric fields.Two kinds of precursors were prepared. One was a normal methylpolysilazane (Si_x(NH)_y CH_3) and the other was a porous methylpolysilazane in which a porogen was incorporated, where Si-NH bonds turned to Si-O-Si bonds, while Si-CH_3 bonds stayed constant. A porogen was remained in the film after the pre-bake and H_2O absorption steps and vanished after 400℃ cure step due to evaporation, resulting in the formation o … More f porous rnethylsilsesquioxane film.Capacitance-Voltage characteristics of the normal and porous methylsilsesquioxane/SiO_2-substrate capacitors with Cu electrodes were measured before and after 200℃ and 0.1 MV/cm bias-temperature stress for 2 hours. The dielectric constants of the normal and porous rnethylsilsesquioxane films were 2.7 and 2.2, respectively. Flatvband voltage shifts after bias temperature stresses for the normal and porous methylsilsesquioxane/SiO_2/Si capacitors with Cu electrodes were 1.183 and 0.204 V, respectively. It is found that the less negative flatband voltage shift was observed for the porous methylsilsesquioxane film than for the normal film.Results from Arrehnius plots of Cu ion drift velocity for porous and normal films indicated that Cu ion drift velocity in the porous film was lower than that in the normal film and the activation energies of Cu ion drift velocity were in the range of 1.0-1.1ev.lt was found that porous methylsilsesquioxane (MSQ) derived from methylpolysilazane (MSZ) showed inprovement of Cu ion drift suppression by a order of magnitude. Furthermore, Cu ion drift caused defects in porous MSQ so that Poole-Frenkel leakage current increased, resulting in decrease of dielectric breakdown life time. Less

本研究的目的是研究由有机和无机前驱体制备的多孔低k层间电介质膜之间的界面反应。因此，形成了一种新的能抑制铜离子漂移的层间介质膜。为了研究低k介质膜中铜离子漂移的机理，在低k介质膜上制备了铜电极电容器，并进行了偏置温度应力测试，以测量电容器的平带电压漂移，即离子电荷在电场下的漂移。一种是普通的甲基聚硅氮烷(Six(NH)yCH3)，另一种是加入致孔剂的多孔甲基聚硅氮烷，其中Si-NH键转变为Si-O-Si键，而Si-CH3键保持不变。在预焙和吸收H_2O步骤后，成孔剂残留在薄膜中，而在400℃固化步骤后，由于蒸发而消失，形成了…在200℃和0.1mV/cm的偏温应力作用下，测量了正常和多孔甲基倍半硅氧烷/SiO_2衬底铜电极电容器的电容-电压特性。普通倍半硅氧烷薄膜和多孔硅倍半硅氧烷薄膜的介电常数分别为2.7和2.2。采用铜电极的普通和多孔甲基倍半硅氧烷/SiO_2/Si电容器的偏置温度应力后的平带电压漂移分别为1.183和0.204 V。多孔膜和普通膜的铜离子漂移速度的Arrehnius曲线结果表明，多孔膜中的铜离子漂移速度低于普通膜中的铜离子漂移速度，铜离子漂移速度的激活能在1.0~1.1 ev.lt范围内。由甲基聚硅氮烷(MSZ)衍生的多孔甲基倍半硅氧烷(MSQ)对铜离子漂移的抑制作用提高了一个数量级。此外，铜离子漂移导致多孔MSQ中的缺陷，导致Poole-Frenkel泄漏电流增加，导致介质击穿寿命缩短。较少

项目成果

T.Kikkawa: "Current and Future Low-k Dielectrics for Cu Interconnect"Technical Digest of International Eelectron Devices Meeting (IEEE, New York, 2000). 253-256 (2000)

T.Kikkawa：“铜互连的当前和未来低 k 电介质”国际电子器件会议技术文摘（IEEE，纽约，2000 年）。

T. Kikkawa: "Copper drift in porous methylsilsesquiazane low-k dielectric films"Proc. 30th European Solid-State Devices Research Conference (Ireland's Information and Communication Technologies research Centre, Cork, Ireland, Sept. 11-13). 208-211 (2000)

T. Kikkawa：“多孔甲基硅倍半氮烷低 k 介电薄膜中的铜漂移”Proc。

S. Mukaigawa: "Copper Ion Drift in Porous Methylsilsesquiazane Dielectric Films"Extended Abstracts of SSDM, (Japan Society of Applied Phys., Tokyo). 34-35 (2000)

S. Mukaikawa：“多孔甲基硅倍半氮烷介电薄膜中的铜离子漂移”SSDM 的扩展摘要，（日本应用物理学会，东京）。

T. Aoki,: "Porous silicon oxynitride films derived from polysilazane as a novel low-dielectric constant material"Materials Research Society Symposium Proceedings. 565. 41-46 (1999)

T. Aoki，：“作为新型低介电常数材料的聚硅氮烷衍生的多孔氮氧化硅薄膜”材料研究学会研讨会论文集。

吉川公麿: "「多層配線技術とスケーリング」"電子情報通信学会論文誌C(電子情報通信学会). Vol.J83-C No.2. 105-117 (2000)

Kimimaro Yoshikawa：“多层布线技术和缩放”IEICE Transactions C (IEICE) Vol.J83-C No.2 (2000)。