Interface Control of Nanoporous/Organic Low-k Dielectrics and Metal Electrode

纳米多孔/有机低k电介质与金属电极的界面控制

基本信息

批准号：
11450126
负责人：
KIKKAWA Takamaro
金额：
$ 9.54万
依托单位：
HIROSHIMA UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

项目摘要

The purpose of this research is to investigate the interface reaction between porous low-k interlayer dielectric films derived from organic and inorganic precursors. As a consequence, a new interlayer dielectric film which can suppress Cu ion drift is formed. In order to study the mechanism of Cu ion drift in low-k dielectric films, capacitors with Cu electrodes were fabricated on low-k dielectric films and bias-temperature stress tests were carried out so that the flat band voltage shifts of the capacitors could be measured as ionic charges drifted under the electric fields.Two kinds of precursors were prepared. One was a normal methylpolysilazane (Si_x(NH)_y CH_3) and the other was a porous methylpolysilazane in which a porogen was incorporated, where Si-NH bonds turned to Si-O-Si bonds, while Si-CH_3 bonds stayed constant. A porogen was remained in the film after the pre-bake and H_2O absorption steps and vanished after 400℃ cure step due to evaporation, resulting in the formation o … More f porous rnethylsilsesquioxane film.Capacitance-Voltage characteristics of the normal and porous methylsilsesquioxane/SiO_2-substrate capacitors with Cu electrodes were measured before and after 200℃ and 0.1 MV/cm bias-temperature stress for 2 hours. The dielectric constants of the normal and porous rnethylsilsesquioxane films were 2.7 and 2.2, respectively. Flatvband voltage shifts after bias temperature stresses for the normal and porous methylsilsesquioxane/SiO_2/Si capacitors with Cu electrodes were 1.183 and 0.204 V, respectively. It is found that the less negative flatband voltage shift was observed for the porous methylsilsesquioxane film than for the normal film.Results from Arrehnius plots of Cu ion drift velocity for porous and normal films indicated that Cu ion drift velocity in the porous film was lower than that in the normal film and the activation energies of Cu ion drift velocity were in the range of 1.0-1.1ev.lt was found that porous methylsilsesquioxane (MSQ) derived from methylpolysilazane (MSZ) showed inprovement of Cu ion drift suppression by a order of magnitude. Furthermore, Cu ion drift caused defects in porous MSQ so that Poole-Frenkel leakage current increased, resulting in decrease of dielectric breakdown life time. Less

这项研究的目的是研究源自有机和无机前体的多孔低K层间饮食膜之间的界面反应。结果，形成了一种可以抑制Cu ion漂移的新的层间饮食膜。为了研究低k杂音膜中Cu离子漂移的机制，在低K杂音膜上制造了带有Cu电极的电容器，并在电动电场下逐渐逐渐衡量，因此可以测量电容器的平坦频带射电射击，以使电容器的平坦频带换向器进行衡量。一种是正常的甲基丙去甲烷（Si_x（NH）_y ch_3），另一个是多孔的甲基丙硅烷硅烷，在其中掺入了porogen，其中Si-NH键转换为Si-O-SI键，而SI-CH_3键保持恒定。在烘烤前和H_2O抽象步骤之后，薄膜中保留了一个孔，由于蒸发而在400 res固定步骤后消失，导致形成o…更多的多孔rnethylsilselsesquioxane膜。在200℃和0.1 mV/cm的偏置应力之前，测量了带有Cu电极的正常和多孔甲基甲苯二烷/SIO_2-底物电容器的电容 - siO_2-底物电容器2小时。正常和多孔rnethylsilseqioxane膜的介电常数分别为2.7和2.2。偏置温度应力后，正常和多孔甲基甲基苯甲烷/SIO_2/SI电容器的偏置温度应力分别为1.183和0.204 V。 It is found that the less negative flatband voltage shift was observed for the porous methylsilsesquioxane film than for the normal film.Results from Arrehnius plots of Cu ion Drift velocity for porous and normal films indicated that Cu ion drift velocity in the porous film was lower than that in the normal film and the activation energies of Cu ion drift velocity were in the range of 1.0-1.1ev.lt发现衍生自甲基丙硅烷（MSZ）的多孔甲基甲硅烷（MSQ）表现出通过数量级的Cu ion漂移抑制的改善。此外，Cu Ion漂移导致多孔MSQ的缺陷，从而使Poole-Frenkel泄漏电流增加，从而减少了饮食中的寿命。较少的