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Ultra-high Speed Global Interconnects for Inter-chip Communication

用于芯片间通信的超高速全局互连

基本信息

批准号：
15206041
负责人：
KIKKAWA Takamaro
金额：
$ 25.88万
依托单位：
HIROSHIMA UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2005
项目状态：
已结题

项目摘要

Ultra-wideband characteristics of Sierpinski carpet fractal antennas fabricated on silicon substrates with the resistivities of 2290 Ω-cm, 79.6 Ω-cm and 10 Ω-cm were investigated. The return losses lower than-10 dB and high transmission gains of approximately-14 dB were obtained for the antennas with 10 mm distance on the Si substrate with the resistivity of 2290 Ω-cm in the frequency range from 18 to 26.5 GHz. Gaussian monocycle pulses with 70 ps pulse width were transmitted in the Si substrates successfully and the corresponding voltage gains were-23 dB,-26 dB and-39 dB for the Si resistivities of 2290 Ω-cm, 79.6 Ω-cm and 10 Ω-cm, respectively.Ultra-wideband impulse based radio system uses Gaussian monocycle pulse as a transmitted signal at transmitting end and as a template signal at receiving end. In this paper we present a new fully integrated differential Gaussian monocycle pulse generator in 0.18 pm CMOS technology. Here the differential Gaussian monocycle pulse is generated from triangular shaped pulse by a single differentiator circuit and it is then converted into differential form by using a single input to dual output amplifier. The developed circuit occupies a small area of 0.06 mm^2 and consumes a total power of 44 mW from 1.8 V. The transmission of the generated differential Gaussian monocycle pulse at a rate of 1.4 Gbps through integrated dipole antenna in the same Si-substrate for intrachip communication in future ULSI is verified by simulation and results are presented here.

研究了在电阻率为2290 Ω-cm、79.6 Ω-cm和10 Ω-cm的硅衬底上制作的谢尔宾斯基地毯分形天线的超宽带特性。在18 ~ 26.5GHz的频率范围内，在电阻率为2290 Ω·cm的Si基片上，距离为10 mm的天线的回波损耗小于-10dB，传输增益约为-14dB。在Si衬底中成功地传输了脉宽为70 ps的高斯单周期脉冲，在Si电阻率为2290 Ω-cm、79.6 Ω-cm和10 Ω-cm时，相应的电压增益分别为-23 dB、-26 dB和-39 dB，respectively.Ultra-基于宽带脉冲的无线电系统在发射端使用高斯单周期脉冲作为发射信号，在接收端使用高斯单周期脉冲作为模板信号。本文提出了一种新的全集成差分高斯单周期脉冲发生器在0.18 pm CMOS工艺。该方法利用单微分电路从三角形脉冲中产生差分高斯单周期脉冲，然后利用单输入双输出放大器将其转换为差分形式。所开发的电路占用0.06 mm^2的小面积，从1.8 V消耗的总功率为44 mW。通过模拟验证了所产生的差分高斯单周期脉冲通过集成偶极天线以1.4 Gbps的速率传输，用于未来ULSI中的芯片内通信。