Ultra-high Speed Global Interconnects for Inter-chip Communication
用于芯片间通信的超高速全局互连
基本信息
- 批准号:15206041
- 负责人:
- 金额:$ 25.88万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (A)
- 财政年份:2003
- 资助国家:日本
- 起止时间:2003 至 2005
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Ultra-wideband characteristics of Sierpinski carpet fractal antennas fabricated on silicon substrates with the resistivities of 2290 Ω-cm, 79.6 Ω-cm and 10 Ω-cm were investigated. The return losses lower than-10 dB and high transmission gains of approximately-14 dB were obtained for the antennas with 10 mm distance on the Si substrate with the resistivity of 2290 Ω-cm in the frequency range from 18 to 26.5 GHz. Gaussian monocycle pulses with 70 ps pulse width were transmitted in the Si substrates successfully and the corresponding voltage gains were-23 dB,-26 dB and-39 dB for the Si resistivities of 2290 Ω-cm, 79.6 Ω-cm and 10 Ω-cm, respectively.Ultra-wideband impulse based radio system uses Gaussian monocycle pulse as a transmitted signal at transmitting end and as a template signal at receiving end. In this paper we present a new fully integrated differential Gaussian monocycle pulse generator in 0.18 pm CMOS technology. Here the differential Gaussian monocycle pulse is generated from triangular shaped pulse by a single differentiator circuit and it is then converted into differential form by using a single input to dual output amplifier. The developed circuit occupies a small area of 0.06 mm^2 and consumes a total power of 44 mW from 1.8 V. The transmission of the generated differential Gaussian monocycle pulse at a rate of 1.4 Gbps through integrated dipole antenna in the same Si-substrate for intrachip communication in future ULSI is verified by simulation and results are presented here.
研究了电阻率分别为2290Ω-cm、79.6Ω-cm和10Ω-cm的硅基Sierpinski地毯分形天线的超宽带特性。在18~26.5 GHz频率范围内,当天线间距为10 mm,电阻率为2290Ω-cm时,天线的回波损耗小于-10分贝,传输增益约为-14分贝。成功地在硅衬底上传输了脉宽为70ps的高斯单周期脉冲,对于2290Ω-cm、79.6Ω-cm和10Ω-cm的硅衬底,相应的电压增益分别为-23dB、-26db和-39db。本文介绍了一种新型的0.18 PM CMOS工艺的全集成差分高斯单周期脉冲发生器。这里,从三角形脉冲通过单微分器电路产生差分高斯单周期脉冲,然后使用单输入到双输出放大器将其转换为差分形式。该电路面积为0.06 mm~2,1.8V总功耗为44 mW。仿真验证了在未来超大规模集成电路中,产生的1.4Gbps的差动高斯单周期脉冲可以通过集成偶极天线传输,用于芯片内通信。
项目成果
期刊论文数量(68)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Transient Characteristics of Integrated Dipole Antennas ob Silicon for Ultrawideband Wireless Interconnects
用于超宽带无线互连的硅集成偶极子天线的瞬态特性
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:S.Watanabe;K.Kimoto;T.Kikkawa
- 通讯作者:T.Kikkawa
A novel Photoresistive Porous Low-k Interlayer Dielectric Film
一种新型光阻多孔低k层间介质薄膜
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:S.Kuroki;S.Sakamoto;T.Kikkawa
- 通讯作者:T.Kikkawa
Ultrawideband characteristics of fractal dipole antennas integrated on Si for ULSI wireless interconnects
用于 ULSI 无线互连的硅上集成的分形偶极子天线的超宽带特性
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:T.Kikkawa;K.Kimoto;S.Watanabe
- 通讯作者:S.Watanabe
Effect of High Resistivity Si substrate on Antenna Transmission Gain for On-Chip wireless Interconnects
高电阻率硅基板对片上无线互连天线传输增益的影响
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:S.Watanabe;A.B.M.H.Rashid;T.Kikkawa
- 通讯作者:T.Kikkawa
Characteristics of Si Integrated Antenna for Inter-Chip Wireless Interconnection
片间无线互连硅集成天线的特点
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:A.B.M.H.Rasihd;S.Watanabe
- 通讯作者:S.Watanabe
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KIKKAWA Takamaro其他文献
KIKKAWA Takamaro的其他文献
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{{ truncateString('KIKKAWA Takamaro', 18)}}的其他基金
Electromagnetic wave propagation for cancer detection
用于癌症检测的电磁波传播
- 批准号:
21246059 - 财政年份:2009
- 资助金额:
$ 25.88万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Interface Control of Nanoporous/Organic Low-k Dielectrics and Metal Electrode
纳米多孔/有机低k电介质与金属电极的界面控制
- 批准号:
11450126 - 财政年份:1999
- 资助金额:
$ 25.88万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Interface Control of Perovskite High-dielectric-constant Film and Metal Electrode
钙钛矿高介电常数薄膜与金属电极的界面控制
- 批准号:
11555088 - 财政年份:1999
- 资助金额:
$ 25.88万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
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