Ultra-high Speed Global Interconnects for Inter-chip Communication

用于芯片间通信的超高速全局互连

• 批准号: 15206041
• 负责人: KIKKAWA Takamaro
• 金额: $ 25.88万
• 依托单位: HIROSHIMA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15206041/
• 关键词: Silicon; Antenna; Wireless; Interconnect; Radio communication; Interconnection; Transceiver; ガウシアンパルス; 無線通信; 低誘電率膜; 送信回路; 低誘電率層間絶縁膜; LSI; 多孔質; 感光性

Ultra-wideband characteristics of Sierpinski carpet fractal antennas fabricated on silicon substrates with the resistivities of 2290 Ω-cm, 79.6 Ω-cm and 10 Ω-cm were investigated. The return losses lower than-10 dB and high transmission gains of approximately-14 dB were obtained for the antennas with 10 mm distance on the Si substrate with the resistivity of 2290 Ω-cm in the frequency range from 18 to 26.5 GHz. Gaussian monocycle pulses with 70 ps pulse width were transmitted in the Si substrates successfully and the corresponding voltage gains were-23 dB,-26 dB and-39 dB for the Si resistivities of 2290 Ω-cm, 79.6 Ω-cm and 10 Ω-cm, respectively.Ultra-wideband impulse based radio system uses Gaussian monocycle pulse as a transmitted signal at transmitting end and as a template signal at receiving end. In this paper we present a new fully integrated differential Gaussian monocycle pulse generator in 0.18 pm CMOS technology. Here the differential Gaussian monocycle pulse is generated from triangular shaped pulse by a single differentiator circuit and it is then converted into differential form by using a single input to dual output amplifier. The developed circuit occupies a small area of 0.06 mm^2 and consumes a total power of 44 mW from 1.8 V. The transmission of the generated differential Gaussian monocycle pulse at a rate of 1.4 Gbps through integrated dipole antenna in the same Si-substrate for intrachip communication in future ULSI is verified by simulation and results are presented here.

研究了电阻率分别为2290Ω-cm、79.6Ω-cm和10Ω-cm的硅基Sierpinski地毯分形天线的超宽带特性。在18~26.5 GHz频率范围内，当天线间距为10 mm，电阻率为2290Ω-cm时，天线的回波损耗小于-10分贝，传输增益约为-14分贝。成功地在硅衬底上传输了脉宽为70ps的高斯单周期脉冲，对于2290Ω-cm、79.6Ω-cm和10Ω-cm的硅衬底，相应的电压增益分别为-23dB、-26db和-39db。本文介绍了一种新型的0.18 PM CMOS工艺的全集成差分高斯单周期脉冲发生器。这里，从三角形脉冲通过单微分器电路产生差分高斯单周期脉冲，然后使用单输入到双输出放大器将其转换为差分形式。该电路面积为0.06 mm~2，1.8V总功耗为44 mW。仿真验证了在未来超大规模集成电路中，产生的1.4Gbps的差动高斯单周期脉冲可以通过集成偶极天线传输，用于芯片内通信。

项目成果

Transient Characteristics of Integrated Dipole Antennas ob Silicon for Ultrawideband Wireless Interconnects

用于超宽带无线互连的硅集成偶极子天线的瞬态特性

• 发表时间: 2004
• 期刊: Proc.2004 IEEE Antennas and Propagation Society International Symposium and USNC/URSI National Radio Science Meeting Vol.3
• 作者: S.Watanabe;K.Kimoto;T.Kikkawa
• 通讯作者: T.Kikkawa

A novel Photoresistive Porous Low-k Interlayer Dielectric Film

一种新型光阻多孔低k层间介质薄膜

• 发表时间: 2004
• 期刊: Japanese Journal of Applied Physics Vol.43,No.4B
• 作者: S.Kuroki;S.Sakamoto;T.Kikkawa
• 通讯作者: T.Kikkawa

Ultrawideband characteristics of fractal dipole antennas integrated on Si for ULSI wireless interconnects

用于 ULSI 无线互连的硅上集成的分形偶极子天线的超宽带特性

• 发表时间: 2005
• 期刊: Electron Device Letters, IEEE Volume26,Issue10
• 作者: T.Kikkawa;K.Kimoto;S.Watanabe
• 通讯作者: S.Watanabe

Effect of High Resistivity Si substrate on Antenna Transmission Gain for On-Chip wireless Interconnects

高电阻率硅基板对片上无线互连天线传输增益的影响

• 发表时间: 2004
• 期刊: Japanese Journal of Applied Physics vol.43,No.4B
• 作者: S.Watanabe;A.B.M.H.Rashid;T.Kikkawa
• 通讯作者: T.Kikkawa

Characteristics of Si Integrated Antenna for Inter-Chip Wireless Interconnection

片间无线互连硅集成天线的特点

• 发表时间: 2004
• 期刊: Japanese Journal of Appilied Physics Vol.43,No.4B
• 作者: A.B.M.H.Rasihd;S.Watanabe
• 通讯作者: S.Watanabe