Nanometer Polarization Control Devices and Coherent Detection

纳米偏振控制器件和相干检测

基本信息

批准号：
11450139
负责人：
MINAKATA Makoto
金额：
$ 8.9万
依托单位：
Shizuoka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450139/
关键词：
Electron Beam Irradiation Charge Distribution Model Nanometer Scale Domain Inversion Second Harmonic Generation P-E Hysteresis Curve Threshold of Domain Inversion LiTaO_3 Interaction of Coulomb Force LiTaO_3 大容量高密度メモリ LiNbO_3 核形成しきい値

项目摘要

We Have been studying the formation of nanometer scale inversion domains in LiTaO_3 (LT) and LiNbO_3 (LN) using an electron beam (EB) irradiation and an external electric field applied method.In this study, we have been obtained the following results ;1) The Coulomb force caused by the electrons impinging into crystal by EB irradiation were measured. We led the equation for the interaction of Coulomb between a small dot and a surrounding ring (control-ring) which is drawn with various electronic densities before drawing of a small dot. Then we drawn the control-ring with same density and different size and compared the size of inverted pattern with the original designed one. There was good agreement with the pattern size as expected. It has been clear that the mechanism of LN and LT domain inversion corresponding to two method, and a few hundred nm inverted domain size has been successfully obtained by using the optical grade LN which where controlled suitable surface resistibility.2) The coherent detection for imaging domain inversion of nanometer scale has been proposed. This system is composed of AFM unit and Piezo-active and Lock-in amp. units.3) A high efficiency SHG blue light source was fabricated by using a new method called "Full Cover Electrode Method" of domain inversion.4) A new structure (Back slot type) and the optimum design for LN traveling wave optical modulator are proposed. Modulation speed 40 Gbps, and driving voltage 2.8V was achieved.

我们一直在研究LITAO_3（LT）和LINBO_3（LN）中使用电子束（EB）照射和应用外部电场应用方法的纳米尺度反转结构域的形成。在这项研究中，我们得到了以下结果； 1）由EB辐射撞击到晶体中引起的电子引起的库仑力。我们领导了库仑在一个小点和周围环（控制环）之间相互作用的方程式，在绘制一个小点之前，它们用各种电子密度绘制。然后，我们以相同的密度和不同的尺寸绘制了控制环，并将倒置图案的大小与原始设计的大小进行了比较。与预期的图案大小相处得很好。很明显，LN和LT结构域反转的机理与两种方法相对应，并且已经通过使用光学级LN成功获得了几百nm倒置的域大小，该光学级LN在其中控制了适当的表面可阻力。2）已提出了用于纳米尺度的成像域反转的相干检测。该系统由AFM单元和压电活动和锁定放大器组成。 3）使用一种称为“全盖电极方法”域反转的新方法制造了高效率SHG蓝光源。4）提出了一种新的结构（后插槽类型），并提出了LN行动波光学调制器的最佳设计。调制速度为40 Gbps，并实现了驱动电压2.8V。