Negative Electron Affinity Photocathodes on Non- (001) Surfaces
Negative Electron Affinity Photocathodes on Non- (001) Surfaces
批准号:
09044152
负责人:
MINAKATA Makoto
金额:
$3.01万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for international Scientific Research
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1998
中文摘要
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英文摘要
Negative electron affinity (NEA) photocathodes have high sensitivity in a wide range of wavelength, and are practically Important. There are strong demands for sensitivity and lifetime improvements. In this research project, new NEA photocathode formed on high index surfaces and structure of the NEA surface are examined. In addition to (001) surface conventionally used for NEA GaAs photocathodes, GaAs photocathodes are fabricated on (111)A and (311)A surfaces. As a result, a critical temperature is found in heat cleaning process, and higher sensitivity is obtained on non-(001) surfaces. In order to investigate the surface structure of NEA substrates, growth by MBE and ex situ, atomic scale imaging by STM are carried out using MBE-STM combined system in Imperial College, University of London. Based on the experience, the characteristic terrace structures on (111)A and (311)A are clearly observed by our own made MBE-STM system. Clarification of the surface structure and NEA mechanism wou … More ld contribute to further improvements of NBA photocathodes.In addition to the collaboration on NBA photocathodes on high index surfaces, we found out common interest on opto-electronic device fabrication, which has been studied independently in both institutes, especially semiconductor laser with quantum structure. As a basic research of opto-electronic device fabrication, we have grown InGaAs/GaAs multi quantum well (MQW) structure using molecular beam epitaxy (MBE). The maximum PL intensity is obtained for the sample grown under V/III = 3.8. Growth and evaluation on our patterned susbstares by STM-MBE combined system In Imperial College indicates potentialities of the atomic scale In-situ observation on prepatterned substrates. We have also shown the formation of pyramid structures on the square mesa by the growth of MBB.The above mentioned results, we believe, are the first step for opto-electronic device application and worth carrying a stage further. Professor Joyce have suggested us to extend our collaborative activities. Less
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M.Minakata: "The Perfect Velocity Matched High Speed LiNbO_3 Optical Modulators with an Etched Back Slot" Prooeedings of Joint Intl Conf.on Advanced Science and Technology. 194-197 (1998)
M.Minakata:“带有蚀刻槽的完美速度匹配高速 LiNbO_3 光调制器”国际先进科学技术联合会议论文集。
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T.Nomura: "InGaAs/GaAs Multi Quantum Well Grown by Molecular Beam Epitaxy" Proceedings of Joint Int.l Conf.on Advanced Science and Technology. 103-106 (1997)
T.Nomura:“通过分子束外延生长的InGaAs/GaAs多量子井”先进科学技术国际联合会议论文集。
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M.Minakata: "Optical directional copler switch with domain inversion" Proceedings of Joint Int.l Conf.on Advanced Science and Technology. 202-205 (1998)
M.Minakata:“具有域反转的光学定向耦合器开关”先进科学技术国际联合会议论文集。
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M.Minakata: "Observation of Domain Inversion by Coherent Detection" Proceedings of Joint Int.1 Conf.on Advanced Science and Technology. 245-248 (1998)
M.Minakata:“通过相干检测观察域反转”先进科学技术联合国际会议第一届会议论文集。
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T.Nomura: "Fabrication and characteristic of InGaAs/GaAs MQW grown by MBE" Prooeedings of Joint Intl Conf.on Advanced Science and Technology. 206-209 (1998)
T.Nomura:“MBE 生长的 InGaAs/GaAs MQW 的制造和特性”国际先进科学技术联合会议论文集。
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共 47 条
Study on the SFG digital imaging by using nanometer polarization control
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批准号:14350184
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.54万
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财政年份:2002
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负责人:MINAKATA Makoto
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依托单位:
Nanometer Polarization Control Devices and Coherent Detection
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批准号:11450139
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.9万
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财政年份:1999
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负责人:MINAKATA Makoto
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依托单位:
A development of a fiber-type PLZT optical switch
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批准号:61850067
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$4.61万
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财政年份:1986
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负责人:MINAKATA Makoto
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依托单位:
海外基金