Study on the SFG digital imaging by using nanometer polarization control

纳米偏振控制SFG数字成像研究

基本信息

批准号：
14350184
负责人：
MINAKATA Makoto
金额：
$ 9.54万
依托单位：
Shizuoka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14350184/
关键词：
Nanometer Scale Domain Inversion Circular Electrode Resistivity LiNOb_3 Threshold of Domain Inversion Current of Domain Inversion Dicing Saw Ridge Type Waveguide 電界強度比 Full Cover Electrode法円形電極光照射分極反転マイクロドメイン核移動法 LiTaO_3

项目摘要

In this research, the following results were achieved since it was concerned with the domain inversion and microfabrication technologies those became important in malting the proposed device.1)The proposal and the proof of the new domain inversion control method : A new circular form full cover electrode (FCE) method was proposed to fabricate periodic domain inversion in the LiNbO_3 (LN) crystal with a period of 2 μm or less. First of all, it was suggested that the circular electrode provided point contact with the crystal and theoretical analysis was perfornned for the effectiveness of circular electrode to produce small polarization inversion Next, circular electrode of 2 μm period was produced on the resist patterned by 2-beam laser interference exposure method and the pulse voltage application domain inversion experiment was conducted in order to prove the method. As a result, 2μm periodic domain inversion in a 500 μm thick LN crystal was fabricated. Moreover, though it was a part, … More 0.15 μm domain inversion was achieved using this new method and the effectiveness of the proposed circular for FCE method was proved.2)The relation between specific resistance and polarization inversion characteristic of the crystal : The polarization inversion characteristic was examined by the fabrication of small size domain inversion using the LN crystal with controlled specific resistance, ρ. For black-LN (B-LN) crystal, with ρ value fair orders of magnitude lower than of normal LN crystal, domain inversion threshold voltage (V_<th>) was 〜100V and was proportional to ρ^<1/2>. Moreover, uniform dot patterns were fabricated when 100V was applied to B-LN. It was clarified that small domain inversion structure can be fabricated by applying lower threshold voltage which is 1/100 or less times compared to the normal LN crystal using controlled specific resistance crystals.3)Fabrication of the ridge type optical waveguide using the dicing saw : A 5mm width and 50 mm length rectangular optical waveguide was fabricated using a dicing saw. The rotational speed and the sending speed of the blade were 30,000 rpm and 0.3 mm/sec, respectively. The insertion loss and the propagation loss of the optical waveguide were measured using a He-Ne laser. The measured loss values were 1 dB/cm and 7 dB, respectively. The present characteristics of the optical waveguide are not enough. However, optimized processing conditions could show the possibility of better optical waveguide fabrication. Less

In this research, the following results were achieved since it was concerned with the domain inversion and microfabrication technologies those became important in malting the proposed device.1)The proposal and the proof of the new domain inversion control method: A new circular form full cover electrode (FCE) method was proposed to fabricate periodic domain inversion in the LiNbO_3 (LN) crystal with a period of 2 μm or less.首先，有人提出，圆形电极提供了与晶体的接触，并且对理论分析进行了完善，以实现圆形电极的有效性产生小极化反转，接下来是在由2杆激光器干扰方法和脉冲施用域内逆转录域逆转录的2μm周期产生2μM周期的圆形电极。结果，制造了500μm厚的LN晶体中的2μM周期域反转。此外，尽管这是一部分，但……通过这种新方法和提出的FCE方法循环的有效性实现了更多0.15μm的域倒置。2）2）使用小型域逆逆因素在使用LN Crystar的小型域的制造中，检查了晶体的特定电阻和极化反转特征之间的关系：极化反转特征通过小型域域的制造来检查。对于Black-LN（B-LN）晶体，ρ值公平的数量级低于正常LN晶体，域反转阈值电压（V_ <th>）为〜100V，与ρ^<1/2>成比例。此外，将100V应用于B-LN时制造了均匀的点图案。澄清说，与正常的LN晶体相比，使用受控的特异性抗性晶体施加较低的阈值电压，可以通过使用较少的阈值电压来制造小域反转结构。3）使用dicing锯的山脊型光学锯的制造：使用5mm宽度和50mm长度的直角光学波导使用DICING SAW，使用diCguide使用DICGUIDE制造了DICGUIDES FACIENS FACIENS FACIENS SAWE。刀片的旋转速度和发送速度分别为30,000 rpm和0.3 mm/sec。使用HE-NE激光测量了光波导的插入损失和传播损失。测得的损耗值分别为1 dB/cm和7 dB。光学波导的当前特征还不够。但是，优化的处理条件可能显示出更好的光学波导制造的可能性。较少的