权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Study on the SFG digital imaging by using nanometer polarization control

纳米偏振控制SFG数字成像研究

基本信息

批准号：
14350184
负责人：
MINAKATA Makoto
金额：
$ 9.54万
依托单位：
Shizuoka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14350184/
关键词：
Nanometer Scale Domain Inversion Circular Electrode Resistivity LiNOb_3 Threshold of Domain Inversion Current of Domain Inversion Dicing Saw Ridge Type Waveguide 電界強度比 Full Cover Electrode法円形電極光照射分極反転マイクロドメイン核移動法 LiTaO_3

项目摘要

In this research, the following results were achieved since it was concerned with the domain inversion and microfabrication technologies those became important in malting the proposed device.1)The proposal and the proof of the new domain inversion control method : A new circular form full cover electrode (FCE) method was proposed to fabricate periodic domain inversion in the LiNbO_3 (LN) crystal with a period of 2 μm or less. First of all, it was suggested that the circular electrode provided point contact with the crystal and theoretical analysis was perfornned for the effectiveness of circular electrode to produce small polarization inversion Next, circular electrode of 2 μm period was produced on the resist patterned by 2-beam laser interference exposure method and the pulse voltage application domain inversion experiment was conducted in order to prove the method. As a result, 2μm periodic domain inversion in a 500 μm thick LN crystal was fabricated. Moreover, though it was a part, … More 0.15 μm domain inversion was achieved using this new method and the effectiveness of the proposed circular for FCE method was proved.2)The relation between specific resistance and polarization inversion characteristic of the crystal : The polarization inversion characteristic was examined by the fabrication of small size domain inversion using the LN crystal with controlled specific resistance, ρ. For black-LN (B-LN) crystal, with ρ value fair orders of magnitude lower than of normal LN crystal, domain inversion threshold voltage (V_<th>) was 〜100V and was proportional to ρ^<1/2>. Moreover, uniform dot patterns were fabricated when 100V was applied to B-LN. It was clarified that small domain inversion structure can be fabricated by applying lower threshold voltage which is 1/100 or less times compared to the normal LN crystal using controlled specific resistance crystals.3)Fabrication of the ridge type optical waveguide using the dicing saw : A 5mm width and 50 mm length rectangular optical waveguide was fabricated using a dicing saw. The rotational speed and the sending speed of the blade were 30,000 rpm and 0.3 mm/sec, respectively. The insertion loss and the propagation loss of the optical waveguide were measured using a He-Ne laser. The measured loss values were 1 dB/cm and 7 dB, respectively. The present characteristics of the optical waveguide are not enough. However, optimized processing conditions could show the possibility of better optical waveguide fabrication. Less

在本研究中，由于它涉及到在所提出的器件的制造中变得重要的畴反转和微细加工技术，所以取得了以下结果。1）新的畴反转控制方法的提出和证明：提出了一种新的圆形全覆盖电极（FCE）方法，用于在LiNbO_3（LN）晶体中制作周期性畴反转首先，提出了圆形电极与晶体的点接触，并对圆形电极产生小极化反转的有效性进行了理论分析。采用双光束激光干涉曝光法在光刻胶上制作了周期为2 μm的圆形电极，并进行了脉冲电压作用下的畴反转实验。结果在500 μm厚的LN晶体中实现了2μm周期性畴反转。此外，虽然它是一部分， ...更多信息 0.15 2）晶体的比电阻与极化反转特性之间的关系：通过对LN晶体的比电阻ρ进行控制，制作了小尺寸的畴反转器件，研究了其极化反转特性。黑LN（B-LN）晶体的ρ值比普通LN晶体低几个数量级，畴反转阈值电压（V_<th>）为100 V左右，与ρ^<1/2>成正比。此外，当向B-LN施加100 V时，制造均匀的点图案。可以清楚地看出，通过施加与使用受控电阻率晶体的普通LN晶体相比为1/100或更小倍的较低阈值电压，可以制造小畴反转结构。3）使用切割锯制造脊型光波导：使用切割锯制造5 mm宽和50 mm长的矩形光波导。叶片的旋转速度和发送速度分别为30，000 rpm和0.3mm/sec。使用He-Ne激光器测量光波导的插入损耗和传播损耗。测得的损耗值分别为1 dB/cm和7 dB。光波导的现有特性是不够的。然而，优化的工艺条件可以显示出更好的光波导制造的可能性。少