The Trial Productien Of Bolometer Device For Terahertz Mixer With Niobium Nitride

氮化铌太赫兹混频器辐射热计装置的试制

• 批准号: 11554007
• 负责人: IHII Kouich
• 金额: $ 7.55万
• 依托单位: KISARAZU NATIONAL COLLEGE OF TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11554007/
• 关键词: Terahertz Mixer; Niobium Nitride; Bolometer; FFO; Lattice Cooled; Diffusion Cooled; Micro-strip Slot antenna; Super conductive transmission line; ホットエレクトロン

The trial production of lattice cooled hot electron bolometer was done, and the research of searching for realization as THz-Mixer device was done. As for a thin film antenna because of Mixer realization and local oscillator vessel as well, an experiment and simulation were done.1. Hot Electron Bolometer (HEB) Bolometer device was made by using NbN. It got a good D.C. characteristic. 1OOGHz A.C. characteristic measurement by wave guide was tried. But, an element broke, and it didn't reach it for the measurement. Moreover, the critical temperature of made bolometer device was low, and it was understood that the quality of a thin film wasn't good, and did the improvement of the quality of a thin film. But, it couldn't be attained though it aimed at making the critical temperature (Tc) of a thin film of the thickness 5nm at 10K. It proceeds with increase the IF frequency of olometer mixer after a thin film improvement, and wants to do the performance evaluation of THz-Mixer.2. Micro-strip, Slot, Antenna (MSA) The scale model of the single slot antenna which installed hyper hemisphere lens was made, and pointing and the measurement of impedance were done. Furthermore, pointing of the single slot antenna and twin slot antenna was asked by using the electromagnetic analytic software (HFSS) by the simulation. Mixer mount with hyper hemisphere lens was designed by this.3. Flux Flow Oscillator (FFOs) The trial production of FFOs was done by using NbN. It was made with the SIS structure of NbN/AlN/NbN. Critical current density (Jc) realized more than 10kA/cm^2 And, detection did the peak electric power of 1.2 μ W at 0.78THz. These experimental results indicate that FFOs with high-Jc NbN/AlN/NbN junctions are applicable for an on-chip local oscillator above 0.6THz.

进行了点阵冷却热电子测热仪的试制，并进行了作为太赫兹混频器器件的寻实现研究。由于实现了混频器和本振容器，对薄膜天线进行了实验和仿真。热电子测热仪（HEB）是用NbN材料制成的热电子测热仪。它有很好的直流特性。采用波导法对100ghz交流特性进行了测试。但是，一个元素坏了，它没有到达那里进行测量。此外，所制成的测热仪器件的临界温度较低，了解薄膜质量不好，并对薄膜质量进行了改进。但在10K条件下，达到5nm厚度薄膜的临界温度（Tc）是无法达到的。本文从提高测色器薄膜改进后的中频入手，并对太赫兹混频器进行性能评价。建立了安装超半球透镜的单缝隙天线的比例模型，并进行了指向和阻抗测量。通过仿真，利用电磁分析软件（HFSS）对单槽天线和双槽天线的指向进行了分析。利用这种方法设计了超半透镜混合器支架。以NbN为原料，试制了磁通流振荡器（ffo）。采用NbN/AlN/NbN的SIS结构制备。临界电流密度（Jc）大于10kA/cm^2，检测到0.78THz下的峰值电功率为1.2 μ W。实验结果表明，具有高jc NbN/AlN/NbN结的ffo适用于0.6THz以上的片上本振。

项目成果

神代暁: "磁束フロー型ジョセフソン発振器特性の臨界電流密度依存性"日本応用物理学会春期年会. (2001)

Akira Kamishiro：“通量流型约瑟夫森振荡器特性的临界电流密度依赖性”日本应用物理学会春季年会（2001）。

S.KOHJIRO, Zhen WANG, Sergey V.SHITOV, S.MIKI, A.KAWAKAMI, and A.SHOJI: "On-Chip Detection Power from Flux-Flow Oscillators with Epitaxial and High-Jc NbN/AlN/NbN Junctions."13th International Symposium 」」_ on Space THz Tech.. (2002)

S.KOHJIRO、Zhen WANG、Sergey V.SHITOV、S.MIKI、A.KAWAKAMI 和 A.SHOJI：“具有外延和高 Jc NbN/AlN/NbN 结的磁通流振荡器的片上检测能力。”第十三届空间太赫兹技术国际研讨会”_ (2002)

石井 孝一: "サブミリ波帯用格子冷却光電子ボロメータミキサ素子の試作"木更津工業高等専門学校紀要. 33号. 1-6 (2000)

Koichi Ishii：“用于亚毫米波段的晶格冷却光电测辐射热计混合器元件的原型”木更津国立技术学院公告第 33. 1-6 (2000)。

K.ISHII, N.KAMIKAWA, S.MIURA, and S.KODAIRA: "Make a Lattice Cooled Photo elctron Bolometric Mixer Device."THE BULLETIN OF KISARAZU NATIONAL COLLEGE OF TECHNOLOGY. Vol.33. 1-6 (2000)

K.ISHII、N.KAMIKAWA、S.MIURA 和 S.KODAIRA：“制作晶格冷却光电电子测热混合器装置。”木更津国立技术学院公告。

S.Kohjiro: "Fabrication of Niobium-Carbonitride Josephson Junction on Magnesium-Oxide Substrates Using Chemicai-Mechanical Polishing"IEEE Trans.Appl.Supercond. Vol.9,No.2. 4464-4467 (1999)

S.Kohjiro：“使用化学机械抛光在氧化镁基板上制造铌碳氮化物约瑟夫森结”IEEE Trans.Appl.Supercond。