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Single Crystal Growth and Stoichiometory Control of Ecologically Friendly Semiconductor β-FeSi_2

生态友好型半导体β-FeSi_2的单晶生长及化学计量控制

基本信息

批准号：
14350394
负责人：
ISSHIKI Minoru
金额：
$ 11.01万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14350394/
关键词：
β-FeSi_2 chemical vapor transport molecular beam epitaxy hydrogen terminate Si substrate high quality single crystal high purity iron 半導体用超高純度鉄 β-FeSi2単結晶電気特性成長機構化学気相輸送法フォトルミネッセンス β-FeSi_2単結晶

项目摘要

Ecologically friendly semiconductor β-FeSi_2 has been intensively investigated in recent years as a promising material for future optoelectronic devices, because β-FeSi_2 has theoretical direct band gap 0.85 eV that fits the minimum absorption window of the quartz fiber. In addition, fabrication of β-FeSi_2 based light emitters or detectors on Si substrate leads to optical integrated circuits. Although characterizing the high quality single crystal reveals its intrinsic properties as well as the effects of impurities and native defects caused by the deviation from stoichiometry, a high quality single crystal has not been grown. In the present study, bulk single crystals and thin epitaxial films were grown by chemical vapor transport (CVT) and molecular beam epitaxy, respectively.Transport mechanism and optimum growth condition were clarified for CVT growth. CVT grown single crystal showed a clear photoluminescence and a high electron mobility at a low temperature. In addition, a high quality β-FeSi_2 epitaxial film with the thickness of 180 nm has been successfully grown for the first time on hydrogen terminated Si(111) at 580℃ by using solid source molecular beam epitaxy. The β-FeSi_2 film grown with stoichiometric Fe/Si source flux ratio 1:2 has a superior morphology and crystallinity comparing to the published results of the films grown by other methods.

由于β-FeSi2的理论直接禁带宽度为0.85eV，与石英光纤的最小吸收窗口相匹配，因此近年来，生态友好型半导体β-FeSi2作为一种有前途的光电子器件材料受到了广泛的关注。此外，在硅衬底上制备β-FeSi2基光发射器或探测器导致了光学集成电路的出现。尽管对高质量单晶的表征揭示了它的本征性质，以及由于偏离化学计量比而引起的杂质和本征缺陷的影响，但高质量的单晶并没有生长出来。本文分别采用化学气相输运(CVT)法和分子束外延技术生长了块状单晶和薄外延薄膜，阐明了CVT生长的输运机制和最佳生长条件。CVT生长的单晶在低温下表现出明显的光致发光和较高的电子迁移率。此外，利用固体源分子束外延技术，首次在氢端Si衬底上成功地生长出了厚度为180 nm的高质量β-FeSi2外延膜，生长频率为580℃。化学计量比Fe/Si源流量比为1：2时生长的β-FeSi2薄膜具有较好的形貌和结晶度。