Impurity removal kinetics of hydrogen plasma arc melting
Impurity removal kinetics of hydrogen plasma arc melting
批准号:
08455344
负责人:
ISSHIKI Minoru
金额:
$4.86万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1998
中文摘要
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英文摘要
It has been found that hydrogen plasma arc melting (HPAM) has a strong effect on impurity removal even under an atmospheric pressure. The aim of this study is to clarify the mechanism of impurity elimination during HPAM.The main results are follows.1. The thermodynamic calculations agree with the experimental data on the impurity elimination. This indicates that hydrogen addition to the argon plasma gas allows the system to achieve the equilibrium like state much faster than argon plasma melting.2. It is found that the impurity removal mainly depends on the vapor pressure difference between the impurity and the base metal, although several impurities such as Sb, P and O are eliminated in the form of hydrides.3. Impurity removal obeys the first law reaction and consists of 2 steps with different elimination rates. In the higher concentration range (step 1), elimination rate remarkably increase with the hydrogen concentration of the plasma gas. Hydrogen addition also lowers the impurity concentration at the transition from step 1 to step 2.4. Impurity elimination of step 1 and 2 are found limited by diffusion through boundary layers in gas phase and metal phase, respectively.5. Thermodynamic and mathematical simulations clarify that hydrogen addition gives drastic change of the properties and performance of the plasma arc and increases the temperature in the vicinity of the molten metal surface.6.Finally, HPAM is found to possess an remarkable capability as a new refining method, which is confirmed by applying it to the purification of several metals.
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D.Elanski: "Refining elfect of Ar-Hz plasma arc melting of Nb-based alloy"
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D.Elanski: "Purification of tantalum by means of plasma arc metting" Materials Lett.30. 1-5 (1997)
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A.M.Fudolich: "Prediction of Surface Temperature on Metal Beads Subjected to Argon-Hydrogen Transferred Arc Plasma Impingement" ISIJ Intern.37-6. 623-629 (1997)
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三村耕司: "高純度化技術体系第2巻(P.887〜94)特殊溶解(電子溶解プラズママーク溶解)" フジテクノシステム, 1019 (1997)
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共 19 条
Low Temperature Oxidation of Ultra-High Purity Metals and Stoichiometry Control of Oxide Films
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批准号:17360366
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.06万
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财政年份:2005
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负责人:ISSHIKI Minoru
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依托单位:
Single Crystal Growth and Stoichiometory Control of Ecologically Friendly Semiconductor β-FeSi_2
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批准号:14350394
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.01万
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财政年份:2002
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负责人:ISSHIKI Minoru
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依托单位:
海外基金