In-situ measurements of the irradiation effects in semiconductors under high energy ion irradiation
In-situ measurements of the irradiation effects in semiconductors under high energy ion irradiation
批准号:
14380233
负责人:
ASAI Keisuke
金额:
$8.83万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2002
资助国家:
日本
项目状态:
已结题
起止时间:
2002 至 2004
中文摘要
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英文摘要
We analyzed the high-density excitation effects and local high temperature state induced by energetic ions in various semiconductors by measuring the luminescence spectra under irradiation. Time-integrated luminescence spectra were measured with an OMA. Time-resolved spectra were measured with a time-correlated. single photon counting system, which determined the arrival time of ions by detecting with multichannel plates the secondary electrons emitted when the ions transmit a carbon foil.At first, we have succeeded in observing the transient local high-temperature state along an ion trajectory by measuring the luminescence spectra of organic-inorganic layered perovskite materials, which is known to form a natural multiple quantum well structure and exhibit fast luminescence due to free excitons. Furthermore, from the relation between the observed local temperature and the excitation density, it was found that local melting occurs.Secondly, we analyzed the spatial behavior of the excit … More ed carriers from the time-resolved luminescence spectra of CdS. By analyzing the spectral shape of a fast aluminescence band due to electron-hole plasma, we estimated the density and the average energy of the excited carriers when radiative recombination occurs. The obtained results can be quantitatively explained within the diffusion model where polar optical scattering of the excited carriers is taken into account.In addition, we measured the luminescence spectra of a single crystal of MgO, in which the electron lattice coupling is slightly stronger than in semiconductors. As the excitation density increased, a luminescence band due to free excitons reduced its intensity, and finally disappeared. In contrast, another luminescence band appeared at the low-energy side of the free exciton band. Similarly to the case of conventional semiconductors, we attributed the disappearance of the free exciton band and the appearance of the new band to the screening of the Coulomb interaction and the radiative recombination in the collective excited states analogous to the electron hole plasma, respectively. Less
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M.Koshimizu: "Measurement of the Local Temperature in an Ion Track Using Low-Dimensional Quantum Confinement Structure"Radiation Physics and Chemistry. 66. 35-38 (2003)
M.Koshimizu:“使用低维量子限制结构测量离子轨道中的局部温度”辐射物理和化学。
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M.Koshimizu: "Observation of Local Heating in an Ion Track by Measuring the Ion-Induced Luminescence Spectrum"Nuclear Instruments and Methods in Physics Research B. 206. 57-60 (2003)
M.Koshimizu:“通过测量离子诱导发光光谱观察离子轨道中的局部加热”物理研究中的核仪器和方法 B. 206. 57-60 (2003)
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M.Koshimizu, K.Shibuya, K.Asai, H.Shibuya: "Observation of Local Heating in an Ion Track by Measuring the Ion-Induced Luminescence Spectrum"Nuclear Instruments and Methods B. (in press).
M.Koshimizu、K.Shibuya、K.Asai、H.Shibuya:“通过测量离子诱导发光光谱观察离子轨道中的局部加热”核仪器和方法 B.(出版中)。
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Biexciton luminescence in the layered perovskite-type materials induced by high-energy ion irradiation
高能离子辐照诱导层状钙钛矿型材料中的双激子发光
DOI:
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发表时间:
2002
期刊:
Nonlinear Optics 29
影响因子:
--
作者:
[J.Liu, S.Koshizuka, Y.Oka, M.Koshimizu]
通讯作者:
M.Koshimizu
K.Shibuya, M.Koshimizu, Y.Takeoka, K.Asai: "Scitillation Properties of (C_6H_<13>NH_3)_2PbI_4 : Exciton luminescence of an organic/inorganic multiple quantum well compound induced by 2.0 MeV protons"Nuclear Instruments and Methods B. 194. 207-212 (2002)
K.Shibuya、M.Koshimizu、Y.Takeoka、K.Asai:“(C_6H_13>NH_3)_2PbI_4 的闪烁特性:2.0 MeV 质子诱导的有机/无机多量子阱化合物的激子发光”核仪器和方法
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共 14 条
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Next-Generation Dynamic Wind-Tunnel Testing for Realizing Virtual Flight-Test Environment
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Development of Wind Tunnel Technology for Simulating Planetary Atmospheric Flight
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Molecular Structure Modification and Characterization of Langmuir-Blodgett Films made of Amphiphilic Polysilane through Ionizing Radiation
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财政年份:1993
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负责人:ASAI Keisuke
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依托单位:
海外基金