Functions and physics of organic single-crystal interfaces

本项目旨在阐明有机单晶半导体新界面的基本电子态。与非晶硅相比，一些印刷有机晶体半导体表现出显著的高迁移率，因此这些材料有望在下一代印刷和柔性电子工业中实现。在我们从化学、物理和工程方法对这些系统进行全面研究之后，我们得到了在新合成的半导体中具有更高迁移率的结果。从跳跃和类带输运的基本电子性质出发，不断研究电荷输运机制。此外，我们还介绍了高压下二维有机单晶界面的实验，从而证明了噻吩基有机单晶晶体管的结构-性能关系表现出异常和巨大的压力效应。上述结果对理解有机二维电子系统的电子性质有重要贡献。

This project has aimed at elucidating fundamental electronic states at the novel interfaces of organic single crystal semiconductors. Some of printed organic crystalline semiconductors show remarkably high mobility as compared with that of amorphous silicon, so that these materials are expected to be implemented in next-generation printed and flexible electronics industry. After our comprehensive studies of such systems from chemical, physical and engineering approaches, we got results of even higher mobility in newly synthesized semiconductors. The charge transport mechanism is continuously studied in terms of fundamental electronic natures between hopping and band-like transport. Furthermore, we have introduced experiments of the two -dimensional organic single-crystalline interfaces under high pressure, so that the structure-property relationship exhibited anomalous and giant pressure effects in thiphene-based organic single-crystal transistors. The above results gives significant contribution in understanding electronic properties of organic two-dimensional electronic systems.