Photon spin charge texture in nano-semiconductor physics

1.研究了强磁场下稀磁半导体量子结构中实现的双激子态。在通过稀磁势垒的交换相互作用有效诱导的极强磁场下，首次观察到单重态双激子的失稳，而自旋三重态双激子则增加了它的稳定性。考虑界面单分子层涨落的扩散蒙特卡罗模拟计算了双激子的结合能，与实验结果吻合较好。2.通过磁光致发光测量和理论磁极化子模型研究了稀磁半导体量子结构中激子局域化的机制。阐明了激子分叉是由极化子效应引起的。3.通过高压和极强磁场下的磁致发光研究，观察到稀磁量子阱中的内峰塞曼位移。界面δ势模型很好地解释了这一结果。此后，我们提出了在稀磁半导体异质结构中提取异质界面单层磁性的方法。4.在稀磁量子阱中实现的高密度二维电子气系统中可以观察到自旋极化的带电激子。我们对磁吸收和光致发光测量的分析使我们理解了在如此高的电子密度下自旋极化带电激子的产生和复合机制。

1.Biexciton states realized in diluted magnetic semiconductor quantum structures have been investigated under high magnetic field. The destabilization of a singlet biexciton has been observed for the first time under extremely high magnetic field effectively induced by the exchange interaction through the diluted magnetic barrier, whereas a spin triplet biexciton increases its stability. A diffusion Monte-Carlo simulation taking monolayer fluctuation at the interface into account has been performed to evaluate the binding energies of the biexciton, which agreed well with the observation.2.The exciton localization mechanisms in the dilute magnetic semiconductor quantum structure have been studied both magneto-photoluminescence measurements and theoretical magnetic polaron model. It has been clarified that an exciton bifurcation takes place caused by the polaron effect.3.Enormous Zeeman shifts in diluted magnetic quantum wells have been observed by the magneto-luminescence study under high pressure and extremely high magnetic field. The results have been well accounted for by the interface δ-potential model. We have henceforth proposed the method of extracting monolayer magnetism at the hetero-interface in the dilute magnetic semiconductor hetero structures.4.We could observe spin polarized charged excitons in high density two-dimensional electron gas system realized in the diluted magnetic quantum wells. Our analysis of the magneto-absorption and photo-luminescence measurements has led our comprehension of the creation and recombination mechanisms of the spin polarized charged excitons at such high electron density regime.