Photon spin charge texture in nano-semiconductor physics

纳米半导体物理中的光子自旋电荷织构

基本信息

  • 批准号:
    11694095
  • 负责人:
  • 金额:
    $ 6.4万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
  • 财政年份:
    1999
  • 资助国家:
    日本
  • 起止时间:
    1999 至 2000
  • 项目状态:
    已结题

项目摘要

1.Biexciton states realized in diluted magnetic semiconductor quantum structures have been investigated under high magnetic field. The destabilization of a singlet biexciton has been observed for the first time under extremely high magnetic field effectively induced by the exchange interaction through the diluted magnetic barrier, whereas a spin triplet biexciton increases its stability. A diffusion Monte-Carlo simulation taking monolayer fluctuation at the interface into account has been performed to evaluate the binding energies of the biexciton, which agreed well with the observation.2.The exciton localization mechanisms in the dilute magnetic semiconductor quantum structure have been studied both magneto-photoluminescence measurements and theoretical magnetic polaron model. It has been clarified that an exciton bifurcation takes place caused by the polaron effect.3.Enormous Zeeman shifts in diluted magnetic quantum wells have been observed by the magneto-luminescence study under high pressure and extremely high magnetic field. The results have been well accounted for by the interface δ-potential model. We have henceforth proposed the method of extracting monolayer magnetism at the hetero-interface in the dilute magnetic semiconductor hetero structures.4.We could observe spin polarized charged excitons in high density two-dimensional electron gas system realized in the diluted magnetic quantum wells. Our analysis of the magneto-absorption and photo-luminescence measurements has led our comprehension of the creation and recombination mechanisms of the spin polarized charged excitons at such high electron density regime.
1.研究了在强磁场下稀磁半导体量子结构中实现的双激子态。本文首次观察到单线态双激子在通过稀释磁势垒的交换作用有效诱导的极高磁场下的不稳定性,而自旋三重态双激子则增加了其稳定性。利用蒙特卡罗扩散模拟计算了双激子的结合能,计算结果与观测结果吻合较好。本文从磁致光测量和理论磁极化子模型两方面研究了稀磁半导体量子结构中的激子局域化机制。已经阐明了极化子效应引起激子分岔的发生。在高压和极高磁场条件下的磁致发光研究中,观察到稀释磁量子阱中存在巨大的塞曼位移。界面δ势模型很好地解释了这一结果。因此,我们提出了在稀磁性半导体异质结构的异质界面处提取单层磁性的方法。在稀释磁量子阱中可以观察到高密度二维电子气体系统中自旋极化的带电激子。通过对磁吸收和光发光测量的分析,我们理解了在如此高的电子密度下自旋极化带电激子的产生和重组机制。

项目成果

期刊论文数量(285)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
R.Akimoto, F.Sasaki, S.Kobayashi, K.Ando, G.Karczewski, and T.Wojtowicz: "Ultrfast excitonic optical gain induced by gigant-zeeman splitting in Cd_<1-x>MN_xTe quantum wells"J.of Luminescence. 87-89. 868 (2000)
R.Akimoto、F.Sasaki、S.Kobayashi、K.Ando、G.Karczewski 和 T.Wojtowicz:“Cd_<1-x>MN_xTe 量子阱中巨塞曼分裂引起的超快激子光学增益”J.of
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V.Scherbakov, A.V.Akimov, D.R.Yakovlev, W.Ossau, G.landwehr, T.Wojtowicz, G.Karczewski, and J.Kossut: "Spin-lattice relaxation in semimagnetic CdMnTe/CdMgTe quantum wells"Phys.Rev.B. 62. R10 641 (2000)
V.Scherbakov、A.V.Akimov、D.R.Yakovlev、W.Ossau、G.landwehr、T.Wojtowicz、G.Karczewski 和 J.Kossut:“半磁性 CdMnTe/CdMgTe 量子阱中的自旋晶格弛豫”Phys.Rev.B。
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A.V.Scherbakov, A.V.Akimov, D.R.Yakovlev, W.Ossau, G.Landwehr, T.Wojtowicz, G.Karczewski, and J.Kossut: "Detection of nonequilibrium phonos by the exciton luminescence in CdMnTe-based quantum wells"Physica B. 263-264. 501 (1999)
A.V.Scherbakov、A.V.Akimov、D.R.Yakovlev、W.Ossau、G.Landwehr、T.Wojtowicz、G.Karczewski 和 J.Kossut:“基于 CdMnTe 的量子阱中激子发光检测非平衡声子”Physica B.263
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    0
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T.Wojtowicz,M.Kutrowski,G.Karczewski,J.Kossut,B.Konig,A.Keller,D.R.Yakovlev,A.Waag,J.Geurts,W.Ossau,G.Landwehr,I.A.Merkulov,F.J.Teran,and M.Potemski: "II-VI quantum structures with tunable electron g-factor"J.Cryst.Growth. 214/215. 378-381 (2000)
T.Wojtowicz、M.Kutrowski、G.Karczewski、J.Kossut、B.Konig、A.Keller、D.R.Yakovlev、A.Waag、J.Geurts、W.Ossau、G.Landwehr、I.A.Merkulov、F.J.Teran 和
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C.S.Kim,M.Kim,S.Lee,J.Kossut,J.K.Furdyna,and M.Dobrowolska: "CdSe quantum dots in a Zn_<1-x>Mn_xSe matrix : new effects due to the presence of Mn"J.Cryst.Growth. 214/215. 395-398 (2000)
C.S.Kim、M.Kim、S.Lee、J.Kossut、J.K.Furdyna 和 M.Dobrowolska:“Zn_<1-x>Mn_xSe 矩阵中的 CdSe 量子点:由于 Mn 的存在而产生的新效应”J.Cryst
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TAKEYAMA Shojiro其他文献

TAKEYAMA Shojiro的其他文献

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{{ truncateString('TAKEYAMA Shojiro', 18)}}的其他基金

Optical Properties of Spin Controlled Semiconductor Nanostructures
自旋控制半导体纳米结构的光学性质
  • 批准号:
    09244106
  • 财政年份:
    1997
  • 资助金额:
    $ 6.4万
  • 项目类别:
    Grant-in-Aid for Scientific Research on Priority Areas
Thin-Film Single-Crystal Growth of Layered Materials and Fabrication of The Layered Superlattices by a Hot Wall Technique, and Their Optical Properties
层状材料的薄膜单晶生长和热壁技术制备层状超晶格及其光学性能
  • 批准号:
    62460025
  • 财政年份:
    1987
  • 资助金额:
    $ 6.4万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)

相似海外基金

Elucidation of interface magnetism in topological insulator/ferromagnetic material and development for high-temperature quantum anomalous Hall effect
拓扑绝缘体/铁磁材料界面磁性的阐明和高温量子反常霍尔效应的发展
  • 批准号:
    20H02616
  • 财政年份:
    2020
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Development of Soft-X-ray Dichroism Detecting ESR and Application to Surface-Interface Magnetism
软X射线二色性检测ESR的发展及其在表面界面磁学中的应用
  • 批准号:
    25610086
  • 财政年份:
    2013
  • 资助金额:
    $ 6.4万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Engineering Interface Magnetism via Defect Control in Complex Oxide Heterostructures
通过复杂氧化物异质结构中的缺陷控制来工程界面磁性
  • 批准号:
    1206278
  • 财政年份:
    2012
  • 资助金额:
    $ 6.4万
  • 项目类别:
    Continuing Grant
Control of interface magnetism of ultrathin film using magneto-electric effect
利用磁电效应控制超薄膜界面磁性
  • 批准号:
    21760520
  • 财政年份:
    2009
  • 资助金额:
    $ 6.4万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
Experimental Studies of Surface and Interface Magnetism by Spin Polarized Electron Techniques
自旋极化电子技术表面和界面磁性的实验研究
  • 批准号:
    0072708
  • 财政年份:
    2000
  • 资助金额:
    $ 6.4万
  • 项目类别:
    Continuing Grant
Development of RHEED apparatus using spin-polarized electron source for the study of surface and interface magnetism.
开发使用自旋极化电子源的 RHEED 装置来研究表面和界面磁性。
  • 批准号:
    07555008
  • 财政年份:
    1995
  • 资助金额:
    $ 6.4万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Experimental Studies of Surface and Interface Magnetism
表面和界面磁性的实验研究
  • 批准号:
    9500213
  • 财政年份:
    1995
  • 资助金额:
    $ 6.4万
  • 项目类别:
    Continuing Grant
Interface Magnetism and Structure
界面磁性与结构
  • 批准号:
    9117138
  • 财政年份:
    1992
  • 资助金额:
    $ 6.4万
  • 项目类别:
    Continuing grant
Surface and Interface Magnetism Studied by Spin Polarized Light and Electrons
通过自旋偏振光和电子研究表面和界面磁性
  • 批准号:
    03452042
  • 财政年份:
    1991
  • 资助金额:
    $ 6.4万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
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