Study on intrinsic properties of organic semiconductors appeared under ultrahigh vacuum

超高真空下有机半导体本征特性研究

• 批准号: 12440197
• 负责人: TADA Hirokazu
• 金额: $ 10.37万
• 依托单位: Okazaki National Research Institutes
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12440197/
• 关键词: organic semiconductor; organic transistor; carrier mobility; ultrahigh vacuum; lattice scattering; carrier injection; hopping transport; tunnel current; 電界効果トランジスター; 移動度; BTQBT; 分子ワイヤー; キャリア輸送機構; 極低温; 有機電界効果トランジスター; キャリア濃度; intrinsic物性; 有

The mechanism of carrier transport in organic semiconductors and carrier injection from metal electrodes becomes the most important subject to be elucidated for the construction of high performance organic thin film devices. The electrical properties are modified easily by adsorbed gas molecules, which makes it difficult to obtain reliable experimental results. We have studied intrinsic properties under ultrahigh vacuum conditions to strip away the veil of oxygen. We investigated electrical properties of titanyl-phthalocy anine (TiOPc) films under ultrahigh vacuum (UHV) conditions to avoid the influence of gas adsorption. The field-effect measurement revealed that TiOPc films exhibited an n-type semiconducting behavior in UHV. The electron mobility at room temperature was 9 × 10^<-6> cm^2V^<-1>S^<-1> with activation energy of 0.20 eV. The conductivity and carrier density were 9 x 10^<-8> Scm^<-1> and 6 x 10^<16> cm^<-3>, respectively. A clear conversion from n-type to p-type behavior was observed when the films was exposed to oxygen. Strict control of a tmosphere made it possible to obtain a quasi-intrinsic state where both p- and n-type conductions appeared simultaneously.

有机半导体的载流子输运机制和金属电极的载流子注入机制是构建高性能有机薄膜器件的重要课题。电性能很容易被吸附的气体分子改变，这使得很难获得可靠的实验结果。我们已经研究了在高真空条件下剥离氧气面纱的本征性质。为了避免气体吸附对薄膜电学性能的影响，研究了超高真空条件下制备的酞菁氧钛（TiOPc）薄膜的电学性能。场效应测量结果表明，TiOPc薄膜在超高真空下表现出n型半导体特性。室温下的电子迁移率为9 × 10^<-6>cm ^2 V ^<-1>S^，<-1>激活能为0.20 eV。电导率和载流子密度分别为9 × 10 - <-8>5cm-3<-1>和6 × 10 - <16>5cm-3<-3>。当薄膜暴露于氧气中时，观察到从n型到p型的明显转变。严格控制的tmosphere使人们有可能获得一个准本征态，其中p型和n型导电同时出现。

项目成果

M. Takada, H. Graaf, Y. Yamashita and H. Tada: "BTQBT (bis-(1, 2, 5-thiadiazolo)-p-quinobis(1, 3-dithiole))Thin Films ; A Promising Candidate for High Mobility Organic Transistors"Jpn. J. Appl. Phys.. 41. L4-L6 (2002)

M. Takada、H. Graaf、Y. Yamashita 和 H. Tada：“BTQBT (bis-(1, 2, 5-thiadiazolo)-p-quinobis(1, 3-dithiole)) 薄膜；高前景的候选者

H. Tada, H. Touda, M. Takada and K. Matsushige: "Quasi-Intrinsic Semiconducting State of Titanyl-Phtahlocyanine Films Obtained under Ultrahigh Vacuum Conditions"Appl. Phys. Lett.. 76. 873-875 (2000)

H. Tada、H. Touda、M. Takada 和 K. Matsushige：“超高真空条件下获得的钛氧基酞菁薄膜的准本征半导体态”Appl。

D.Schlettwein, K.Hesse, H.Tada, S.Mashiko, U.Storm, J.Binder: "Ordered Growth of Substituted Phthalocyanine Thin Films : Hexadecafluoro-phthalocyaninatozinc on Alkali Halide (110) and Microstructured Si Surfaces"Chem. Mater. 12. 989-995 (2000)

D.Schlettwein、K.Hesse、H.Tada、S.Mashiko、U.Storm、J.Binder：“取代酞菁薄膜的有序生长：碱卤化物 (110) 和微结构硅表面上的十六氟酞菁锌”Chem。

M. Takada, H. Yoshioka, H. Tada and K. Matsushige: "Electrical Characteristics of Phthalocyanine Films Prepared by Electrophoretic, Deposition"Jpn. J. Appl. Phys.. 41. L73-L75 (2002)

M. Takada、H. Yoshioka、H. Tada 和 K. Matsushige：“通过电泳、沉积制备的酞菁薄膜的电特性”Jpn。

H. Tada, T. Tojo, M. Kako, Y. Nakadaira and K. Matsushige: "Energy Transfer in Highly Oriented Permethyldodecasilane and octadecasilane Films"J. Organomet. Chem.. 611. 85-88 (2000)

H. Tada、T. Tojo、M. Kako、Y. Nakadaira 和 K. Matsushige：“高度取向的全甲基十二硅烷和十八硅烷薄膜中的能量转移”J。