Novel wavelength division multiplexed optical functional devices based on semiconductor lasers

基于半导体激光器的新型波分复用光功能器件

• 批准号: 12450139
• 负责人: NAKANO Yoshiaki
• 金额: $ 8.19万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12450139/
• 关键词: semiconductor laser; WDM; quantum wire; distributed feedback laser; DFB laser array; wavelength trimming; optical bistability; optical flip-flop; 波長多重; DFBレーザ; 波長変換

1.Fabrication of Chirped gratings by weighted electron beam exposure and their application to DFB lasers : By combining a field size modulation technique with the weighted electron beam exposure, we successfully fabricated linearly chirped gratings (CGs). Then, we applied them to distributed feedback (DFB) laser fabrication, and observed optical bistability in the CD DFB lasers. The optical power necessary to excite the bistability was found to be one fourth of conventional DFB lasers, and the wavelength range within which the bistability was observed was twice as large as the conventional ones.2.Mass-transported InAsP compressively-strained quantum wire gain-coupled DFB laser fabrication : Mass-transport phenomenon on InGaAsP/InP epitaxial wafers with quarter micron pitch V-grooves was made use of for the fabrication of quantum wire gain-coupled DFB lasers. Amplified spontaneous emission (ASE) around 1.55 μm was observed.3.Wavelength trimming in multiple wavelength gain-coupled DFB la … More yer arrays : Multiple wavelength gain-coupled DFB laser arrays were studied and fabricated as a light source for wavelength division multiplexed (WDM) optical communication. The multiple pitch gratings were formed by electron beam exposure with field size modulation, and the gain coupling was brought about by absorptive gratings. The four wavelength laser array at 1.55μm band fabricated exhibited uniform threshold current distribution and oscillation wavelength spacing. Disordering experiment of a super lattice layer by a pulsed YAG laser beam was conducted for wavelength trimming.4.Temperature insensitive semiconductor laser by strain compensation : Toward "fiber to the home" and its wavelength multiplexing, we studied reduction of temperature sensitivity in laser diode characteristics. More specifically, we tried to cancel out intrinsic temperature dependence by applying mechanical strain to laser diodes with temperature change through novel heat-sink structure. After remodeling of the heat sink, we packaged laser chips on it and demonstrated feasibility of temperature compensation of oscillation wavelength and threshold current by this method.5.All optical_flip-flop based on bistable semiconductor lasers : We proposed a novel bistable directionally coupled semiconductor laser as an all-optical flip-flop important for future all-optical processing. After confirming its effectiveness through theoretical analysis, an actual device was fabricated by utilizing newly developed electrode separation technique. As a result, all-optical flip-flop operation was demonstrated. Less

1.加权电子束曝光制作啁啾光栅及其在DFB激光器中的应用：将场大小调制技术与加权电子束曝光相结合，成功地制作了线性啁啾光栅。然后，我们将它们应用于分布反馈(DFB)激光器的制作中，观察到了CD DFB激光器的光学双稳态。激发双稳态所需的光功率仅为传统DFB激光器的四分之一，并且观察到双稳态的波长范围是传统DFB激光器的两倍。2.质量传输InAsP压缩应变量子线增益耦合DFB激光器的制作：利用InGaAsP/InP外延片上的质量输运现象制作具有四分之一微米间距V型沟槽的量子线增益耦合DFB激光器。在1.55μm附近观察到放大的自发辐射。3.多波长增益耦合DFBla…中的波长修整更多的YER阵列：研究并制作了多波长增益耦合的DFB激光器阵列，作为波分复用(WDM)光通信的光源。采用电子束曝光场大小调制的方法形成多节距光栅，利用吸收光栅实现增益耦合。制作的1.55μm波段四波长激光阵列具有均匀的阈值电流分布和振荡波长间隔。利用脉冲激光对超晶格层进行了无序调谐实验。4.温度不敏感半导体激光器的应变补偿：针对光纤到户及其波长复用，研究了降低半导体激光器特性中的温度敏感性。更具体地说，我们试图通过新的散热片结构对温度变化的激光二极管施加机械应变来抵消固有的温度依赖性。在对散热器进行改型后，将激光芯片封装在其上，并论证了该方法对振荡波长和阈值电流进行温度补偿的可行性。5.基于双稳态半导体激光器的全光触发器：我们提出了一种新型的双稳态定向耦合半导体激光器作为一种对未来全光加工具有重要意义的全光触发器。在通过理论分析证实其有效性的基础上，利用新开发的电极分离技术制作了实际器件。实现了全光触发器的工作。较少

项目成果

Drew N.Maywar: "Robust all-optical control of a semiconductor optical amplifier flip-flop"Technical Digest, Topical Meeting on Optical Amplifiers and their Applications (OAA 2000). OMD14. 79-81 (2000)

Drew N.Maywar：“半导体光放大器触发器的鲁棒全光控制”技术文摘，光放大器及其应用专题会议 (OAA 2000)。

Byongjin Ma: "Photon-induced waveguides for alloptical switching and wavelength conversion"IEICE Transactions on Electronics. E83-C・10. 1683-1686 (2000)

Byongjin Ma：“用于全光切换和波长转换的光子感应波导”IEICE Transactions on Electronics。1683-1686（2000）。

Drew N.Maywar: "1.31-to-1.55 μm wavelength conversion by optically pumping a distributed feedback amplifier"IEEE Photonics Technology Letters. vol.12,no.7. 858-860 (2000)

Drew N. Maywar：“通过光泵浦分布式反馈放大器实现 1.31 至 1.55 μm 波长转换”，IEEE 光子技术快报，第 12 卷，第 7 期（2000 年）。

井上大介: "ヒートシンクの熱応力がInGaAsP系長波長半導体レーザの温度特性に与える影響(The effect of thermal stress caused by heatsinks on temperature characteristics of InGaAsP lasers)"第61回応用物理学会学術講演会. 6p-R-12. 996 (2000)

Daisuke Inoue：“散热器引起的热应力对 InGaAsP 激光器温度特性的影响”，第 61 届日本应用物理学会年会 6p-R-12（2000 年）。

中野義昭: "半導体波長変換・光スイッチングデバイス"マイクロオプティクスニュース(応用物理学会/日本光学会/微小光学研究グループ機関誌). 18・3. 13-18 (2000)

中野义明：“半导体波长转换/光切换装置”微光学新闻（应用物理学会/日本光学学会杂志/微光学研究组）18・3（2000）。