Novel wavelength division multiplexed optical functional devices based on semiconductor lasers

1.电子束加权曝光制作线性啁啾光栅及其在DFB激光器中的应用：将场尺寸调制技术与电子束加权曝光相结合，成功地制作出线性啁啾光栅。然后，我们将它们应用到分布反馈（DFB）激光器的制作中，观察到了CD DFB激光器的光学双稳态。发现激发双稳态所需的光功率是常规DFB激光器的四分之一，并且观察到双稳态的波长范围是常规DFB激光器的两倍大。利用InGaAsP/InP外延片上的质量输运现象制作了量子线增益耦合DFB激光器。在1.55 μm附近获得了放大自发辐射（ASE）。3.多波长增益耦合DFB激光器的波长微调 关于我们 yer数组：研究并制作了用于波分复用（WDM）光通信的多波长增益耦合DFB激光器阵列。采用电子束曝光，通过场尺寸调制形成多节距光栅，利用吸收光栅实现增益耦合。制作的1.55μm波段四波长激光器阵列具有均匀的阈值电流分布和振荡波长间隔。利用脉冲YAG激光对超晶格层进行了无序化实验，实现了波长微调。4.应变补偿的温度不敏感半导体激光器：针对“光纤到户”及其波长复用，研究了降低激光二极管特性中温度敏感性的方法。更具体地说，我们试图抵消固有的温度依赖性，通过施加机械应变的激光二极管的温度变化，通过新的热沉结构。对热沉进行改造后，在其上封装激光器芯片，并验证了该方法对振荡波长和阈值电流进行温度补偿的可行性。5.基于半导体激光器的全光触发器：提出了一种新型的双向耦合半导体激光器，作为未来全光加工的重要器件。在通过理论分析确认其有效性后，利用新开发的电极分离技术制造了实际器件。结果，全光触发器操作被证明。少

1.Fabrication of Chirped gratings by weighted electron beam exposure and their application to DFB lasers : By combining a field size modulation technique with the weighted electron beam exposure, we successfully fabricated linearly chirped gratings (CGs). Then, we applied them to distributed feedback (DFB) laser fabrication, and observed optical bistability in the CD DFB lasers. The optical power necessary to excite the bistability was found to be one fourth of conventional DFB lasers, and the wavelength range within which the bistability was observed was twice as large as the conventional ones.2.Mass-transported InAsP compressively-strained quantum wire gain-coupled DFB laser fabrication : Mass-transport phenomenon on InGaAsP/InP epitaxial wafers with quarter micron pitch V-grooves was made use of for the fabrication of quantum wire gain-coupled DFB lasers. Amplified spontaneous emission (ASE) around 1.55 μm was observed.3.Wavelength trimming in multiple wavelength gain-coupled DFB la … More yer arrays : Multiple wavelength gain-coupled DFB laser arrays were studied and fabricated as a light source for wavelength division multiplexed (WDM) optical communication. The multiple pitch gratings were formed by electron beam exposure with field size modulation, and the gain coupling was brought about by absorptive gratings. The four wavelength laser array at 1.55μm band fabricated exhibited uniform threshold current distribution and oscillation wavelength spacing. Disordering experiment of a super lattice layer by a pulsed YAG laser beam was conducted for wavelength trimming.4.Temperature insensitive semiconductor laser by strain compensation : Toward "fiber to the home" and its wavelength multiplexing, we studied reduction of temperature sensitivity in laser diode characteristics. More specifically, we tried to cancel out intrinsic temperature dependence by applying mechanical strain to laser diodes with temperature change through novel heat-sink structure. After remodeling of the heat sink, we packaged laser chips on it and demonstrated feasibility of temperature compensation of oscillation wavelength and threshold current by this method.5.All optical_flip-flop based on bistable semiconductor lasers : We proposed a novel bistable directionally coupled semiconductor laser as an all-optical flip-flop important for future all-optical processing. After confirming its effectiveness through theoretical analysis, an actual device was fabricated by utilizing newly developed electrode separation technique. As a result, all-optical flip-flop operation was demonstrated. Less